®
Ta n c e r a m
ch i p
ca pa c i T o r s
TANCERAM® chip capacitors can replace tantalum capacitors
in many applications and offer several key advantages over
traditional tantalums. Because Tanceram® capacitors exhibit
extremely low ESR, equivalent circuit performance can often
be achieved using considerably lower capacitance values.
Low DC leakage reduces current drain, extending the battery
life of portable products. Tancerams® high DC breakdown
voltage ratings offer improved reliability and eliminate large
voltage de-rating common when designing with tantalums.
Ad v A N tA g e s
• Low ESR
• Low DC Leakage
• Higher Surge Voltage
• Reduced CHIP Size
• Higher Insulation Resistance
• Non-polarized Devices
• Improved Reliability
• Higher Ripple Current
Ap p l i C At i o N s
• Switching Power Supply Smoothing (Input/Output)
• Backlighting Inverters
• DC/DC Converter Smoothing (Input/Output)
• General Digital Circuits
Typical ESR Comparison
Typical Breakdown Voltage Comparison
10
1
100%
75%
50%
25%
0%
1.0 µF / 16V
Tantalum
1.0 µF / 16V Tantalum
1.0 µF / 16V TANCERAM
1.0 µF / 16V TANCERAM
0.1
0.01
0.001
0
100
200
300
400
500
0.01
0.1
1
10
100
DC Breakdown Voltage
Frequency (MHz)
Ho w t o
o
r d e r tANCerAM®
250
R18
Y
105
Z
V
4
E
CASE SIZE
TERMINATION
V = Ni barrier w/
100% Sn Plating
VOLTAGE
DIELECTRIC
CAPACITANCE
TOLERANCE
Y5V
= +80% -20%
X7R/X5R
TAPE MODIFIER
500
=
=
=
=
50 V
W = X7R
X = X5R
Y = Y5V
1st two digits are
significant; third digit
denotes number of
zeros.
Code
E
T
Type Reel
Plastic 7”
See Chart
250
160
100
25 V
16 V
10 V
Z
Paper
7”
MARKING
4 = Unmarked
Tape specifications
conform to EIA RS481
6R3 = 6.3 V
K
M
=
=
10%
20%
474 = 0.47 µF
105 = 1.00 µF
P/N written: 250R18Y105ZV4E
14
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