HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFH 26N60/IXFT 26N60
IXFK 28N60
600V 26 A 0.25 W
600V 28 A 0.25 W
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Preliminary data
Symbol
TestConditions
MaximumRatings
IXFH/ IXFT
IXFK
TO-247AD(IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
600
600
600
600
V
V
TJ = 25°C to 150°C; RGS = 1 MW
(TAB)
VGS
Continuous
Transient
±20
±30
±20
±30
V
V
VGSM
ID25
IDM
IAR
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
26
104
26
28
112
28
A
A
A
TO-268 (D3) ( IXFT)
G
(TAB)
EAR
EAS
TC = 25°C
TC = 25°C
50
50
mJ
S
1.5
1.5
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
5
V/ns
TO-264AA(IXFK)
PD
TC = 25°C
360
416
W
TJ
-55 ... +150
150
-55 ... +150
300 300
°C
°C
°C
TJM
Tstg
G
D
S
D (TAB)
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
°C
G = Gate
S = Source
TAB = Drain
Md
1.13/10
6
0.9/6 Nm/lb.in.
10
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Weight
g
Features
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• Internationalstandardpackages
• EpoxymeetUL94V-0,flammability
classification
min. typ. max.
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
VDSS
VGS = 0 V, ID = 250 mA
600
2
V
V
VGS(th)
VDS = VGS, ID = 4 mA
4.5
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
25 mA
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
1
mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.25
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98511B(7/00)
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