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IXFT26N50

型号:

IXFT26N50

描述:

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

159 K

VDSS ID25 RDS(on)  
HiPerFETTM  
Power MOSFETs  
IXFH/IXFM21N50  
IXFH/IXFM/IXFT24N50  
IXFH/IXFT26N50  
500 V 21 A 0.25 Ω  
500 V 24 A 0.23 Ω  
500 V 26 A 0.20 Ω  
N-ChannelEnhancementMode  
Highdv/dt, Lowtrr, HDMOSTM Family  
t 250 ns  
rr  
TO-247 AD (IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
(TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
TO-268 (D3) Case Style  
ID25  
IDM  
IAR  
TC = 25°C  
21N50  
24N50  
26N50  
21N50  
24N50  
26N50  
21N50  
24N50  
26N50  
21  
24  
26  
84  
96  
104  
21  
24  
A
A
A
A
A
A
A
A
A
G
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
S
(TAB)  
TO-204 AE (IXFM)  
26  
EAR  
TC = 25°C  
30  
5
mJ  
G
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
V/ns  
D
G = Gate,  
D = Drain,  
S = Source,  
TAB = Drain  
PD  
TC = 25°C  
300  
W
Features  
• International standard packages  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
• Low R  
HDMOSTM process  
-55 ... +150  
• RuggeDdS (pono)lysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
• Low package inductance  
- easy to drive and to protect  
• Fast intrinsic Rectifier  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
Applications  
• DC-DC converters  
• Synchronous rectification  
• Battery chargers  
• Switched-mode and resonant-mode  
power supplies  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• DC choppers  
• AC motor control  
• Temperature and lighting controls  
• Low voltage relays  
VDSS  
VGS = 0 V, ID = 250 µA  
500  
2
V
V
VGS(th)  
VDS = VGS, ID = 4 mA  
4
Advantages  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
200 µA  
• Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole)  
• High power surface mountable package  
• High power density  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
1
mA  
© 1999 IXYS All rights reserved  
91525H (9/99)  
IXFH21N50  
IXFM21N50  
IXFH24N50  
IXFM24N50  
IXFT24N50  
IXFH26N50  
IXFM26N50  
IXFT26N50  
Symbol  
TestConditions  
Characteristic Values  
TO-247 AD (IXFH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
RDS(on) VGS = 10 V, ID = 0.5 ID25  
21N50  
24N50  
26N50  
0.25  
0.23  
0.20  
1
2
3
Terminals:  
1 - Gate  
Pulse test, t 300 µs, duty cycle d 2 %  
2 - Drain  
gfs  
VDS = 10 V; ID = 0.5 ID25, pulse test  
11  
21  
S
3 - Source  
Tab - Drain  
Ciss  
Coss  
Crss  
4200  
450  
135  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
Dim.  
A
Millimeter  
Min. Max.  
Inches  
Min.  
td(on)  
tr  
td(off)  
tf  
16  
33  
65  
30  
25 ns  
45 ns  
80 ns  
40 ns  
Max.  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 2 (External)  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185  
.087  
.059  
.209  
.102  
.098  
A
1
A
2
b
1.0  
1.4  
2.13  
3.12  
.040  
.065  
.113  
.055  
.084  
.123  
b
1.65  
2.87  
1
b
Qg(on)  
Qgs  
Qgd  
135  
28  
62  
160 nC  
40 nC  
85 nC  
2
C
D
E
.4  
20.80  
15.75  
.8  
21.46  
16.26  
.016  
.819  
.610  
.031  
.845  
.640  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
(TO-247 Case Style)  
e
5.20  
19.81  
5.72  
20.32  
4.50  
0.205  
.780  
0.225  
.800  
.177  
RthJC  
RthCK  
0.42 K/W  
K/W  
L
L1  
0.25  
P
3.55  
5.89  
3.65  
6.40  
.140  
0.232  
.144  
0.252  
Q
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
R
S
4.32 5.49  
6.15 BSC  
.170 .216  
242 BSC  
Symbol  
IS  
TestConditions  
Min.  
Typ. Max.  
TO-204 AE (IXFM) Outline  
VGS = 0 V  
21N50  
24N50  
26N50  
21  
24  
26  
A
A
A
ISM  
Repetitive;  
pulse width limited by TJM  
21N50  
24N50  
26N50  
84  
96  
104  
A
A
A
VSD  
IF = IS, VGS = 0 V,  
1.5  
V
Pulse test, t 300 µs, duty cycle d 2 %  
trr  
TJ = 25°C  
TJ = 125°C  
250 ns  
400 ns  
Pins: 1 - Gate, 2 - Source, Case - Drain  
Inches  
Min.  
Dim.  
Millimeter  
Min. Max.  
Max.  
IF = IS  
-di/dt = 100 A/µs,  
VR = 100 V  
QRM  
IRM  
TJ = 25°C  
TJ = 125°C  
1
2
µC  
µC  
A
6.4  
1.53  
1.45  
11.4  
3.42  
1.60  
.250  
.060  
.057  
.450  
.135  
.063  
A1  
b
TJ = 25°C  
TJ = 125°C  
10  
15  
A
A
D
22.22  
.875  
e
e1  
10.67  
5.21  
11.17  
5.71  
.420  
.205  
.440  
.225  
Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S)  
L
11.18  
12.19  
.440  
.480  
p
p1  
3.84  
3.84  
4.19  
4.19  
.151  
.151  
.165  
.165  
TO-268 Outline  
q
30.15BSC  
1.187BSC  
R
R1  
12.58  
3.33  
13.33  
4.77  
.495  
.131  
.525  
.188  
s
16.64  
17.14  
.655  
.675  
Min. Recommended Footprint  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXFH21N50  
IXFM21N50  
IXFH24N50  
IXFM24N50  
IXFT24N50  
IXFH26N50  
IXFM26N50  
IXFT26N50  
Fig.1 OutputCharacteristics  
Fig.2 InputAdmittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
7V  
6V  
TJ = 25°C  
VDS = 10V  
TJ = 25°C  
5V  
0
0
0
0
5
10  
15  
20  
25  
30  
35  
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VGS - Volts  
Fig.3 RDS(on) vs. DrainCurrent  
Fig.4 TemperatureDependence  
of Drain to Source Resistance  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
TJ = 25°C  
ID = 12A  
VGS = 10V  
VGS = 15V  
0
5
10 15 20 25 30 35 40 45 50  
ID - Amperes  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
Fig.5 DrainCurrentvs.  
CaseTemperature  
Fig.6 TemperatureDependenceof  
BreakdownandThresholdVoltage  
30  
25  
20  
15  
10  
5
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGS(th)  
26N50  
BVDSS  
24N50  
21N50  
0
-50 -25  
0
25 50 75 100 125 150  
TC - Degrees C  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
© 1999 IXYS All rights reserved  
IXFH21N50  
IXFM21N50  
IXFH24N50  
IXFM24N50  
IXFT24N50  
IXFH26N50  
IXFM26N50  
IXFT26N50  
Fig.7 GateChargeCharacteristicCurve  
Fig.8 Forward Bias Safe Operating Area  
10  
100  
VDS = 250V  
10µs  
9
Limited by RDS(on)  
ID = 12.5A  
8
IG = 10mA  
100µs  
1ms  
7
6
5
4
3
2
1
0
10  
1
10ms  
100ms  
0.1  
0
25 50 75 100 125 150 175 200  
Gate Charge - nCoulombs  
1
10  
VDS - Volts  
100  
500  
Fig.9 CapacitanceCurves  
Fig.10SourceCurrentvs.Source toDrainVoltage  
50  
45  
40  
35  
30  
25  
4500  
4000  
3500  
3000  
Ciss  
f = 1 Mhz  
DS = 25V  
2500  
2000  
1500  
1000  
500  
V
20  
TJ = 125°C  
15  
TJ = 25°C  
10  
5
Coss  
Crss  
0
0
0
5
10  
15  
20  
25  
0.00 0.25 0.50 0.75 1.00 1.25 1.50  
VDS - Volts  
VSD - Volt  
Fig.11 TransientThermalImpedance  
1
D=0.5  
0.1  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
0.01  
D=0.01  
Single pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Time - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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