3VD396500YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD396500YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology;
¾ Advanced termination scheme to provide enhanced
voltage-blocking capability;
¾ Avalanche Energy Specified;
¾ Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode;
¾ The chips may packaged in TO-220 type and the
typical equivalent product is 840;
CHIP TOPOGRAPHY
¾ The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers;
¾ Die size: 4.13mm*3.98mm;
¾ Chip Thickness: 300±20μm;
¾ Top metal: Al, Backside Metal: Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Symbo
Parameter
l
Ratings
Unit
Drain-Source Voltage
VDS
VGS
ID
500
±20
V
V
Gate-Source Voltage
Drain Current
8.0
A
Power Dissipation (TO-220 Package)
Operation Junction Temperature
Storage Temperature
PD
74
W
°C
°C
-55～+150
-55～+150
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Symbol
Test conditions
Min.
Typ. Max. Unit
Drain -Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
500
-
-
V
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
VTH
VGS= VDS, ID=250µA
VDS=500V, VGS=0V
2.0
-
-
-
4.0
1.0
V
IDSS
µA
RDS(on)
IGSS
VGS=10V, ID=4.0A
VGS=±30V, VDS=0V
IS=8.0A, VGS=0V
-
-
-
0.76
0.9
±100
1.4
Ω
nA
V
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
-
-
VFSD
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2008.07.28
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