3VD379600YL
3VD379600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø
3VD379600YL is a High voltage N•Channel
enhancement mode power MOS•FET chip fabricated
in advanced silicon epitaxial planar technology;
Advanced termination scheme to provide enhanced
voltage•blocking capability;
3
Ø
Ø
Ø
Avalanche Energy Specified;
Source•to•Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode;
Ø
Ø
The chips may packaged in TO•220 type;
The packaged product is widely used in AC•DC
power suppliers, DC•DC converters and H•bridge
PWM motor drivers;
1
Ø
Ø
Ø
Die size: 3.8mm*2.8mm;
PAD3:SOURCE
CHIP TOPOGRAPHY
PAD1:GATE
Chip Thickness: 300±m2m0;
Top metal : Al, Backside Metal : Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain•Source Voltage
Symbol
VDS
VGS
ID
Ratings
600
Unit
V
V
Gate•Source Voltage
±30
Drain Current
4
A
Power Dissipation (TO•220 Package)
Operation Junction Temperature
Storage Temperature
PD
106
W
°C
°C
TJ
150
•55̚+150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain •Source Breakdown Voltage
Gate Threshold Voltage
Drain•Source Leakage Current
Static Drain• Source On State
Resistance
Symbol
BVDSS
VTH
Test conditions
Min
600
2
Typ
Max
Unit
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=600V, VGS=0V
•
•
•
•
V
V
4
1
IDSS
•
µA
RDS(on)
IGSS
VGS=10V, ID=2A
VGS=±30V, VDS=0V
IS=4A, VGS=0V
•
•
•
•
•
•
2.1
±100
1.4
W
nA
V
Gate•Source Leakage Current
Source•Drain Diode Forward on
Voltage
VFSD
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.06.06
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