3VD223600NEYL
3VD223600NEYL N•CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
DESCRIPTION
Ø
3VD223600NEYL is a High voltage N•Channel
enhancement mode power MOS•FET chip fabricated
in advanced silicon epitaxial planar technology.
ESD improved capability
Ø
Ø
Advanced termination scheme to provide enhanced
voltage•blocking capability.
Ø
Ø
Avalanche Energy Specified
Source•to•Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
CHIP TOPOGRAPHY
Ø
Ø
The chips may packaged in TO•92 type.
The packaged product is widely used in AC•DC
power suppliers, DC•DC converters and H•bridge
PWM motor drivers.
Ø
Ø
Ø
Die size: 2.23mm*1.39mm.
Chip Thickness: 300±m2m0.
Top metal : Al, Backside Metal : Ag.
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain•Source voltage
Gate•Source Voltage
Drain Current
Symbol
VDS
VGS
ID
Ratings
Unit
V
600
±30
V
300
mA
ć
Operation Junction Temperature
Storage Temperature
TJ
150
•55•150
ć
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain•Source Breakdown Voltage
Gate•Threshold Voltage
Gate•body Leakage
Symbol
V(BR)DSS
Vth(GS)
lGSS
Test conditions
Min
600
3
Typ
•••
Max
••••
4.5
±10
1
Unit
ID=1mA
V
V
ID=50uA VDS=VGS
VGS=±20V, VDS=0V
VDS=600V, VGS=0V
ID=0.4A, VGS=10V
•••
•••
•••
nA
µA
Zero Gate Voltage Drain Current
Drain•Source On•Resistance
Source•Drain Diode Forward on
Voltage
IDSS
•••
•••
RDS(on)
•••
•••
15
VFSD
ID=0.8A,VGS=0V
•••
•••
1.6
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.11.20
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