3VD212800YL
3VD212800YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø
3VD212800YL is a High voltage N•Channel
enhancement mode power MOS•FET chip fabricated
in advanced silicon epitaxial planar technology.
Advanced termination scheme to provide enhanced
voltage•blocking capability.
3
1
Ø
Ø
Ø
Avalanche Energy Specified
Source•to•Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
Ø
Ø
The chips may packaged in TO•220 type and the
typical equivalent product is 1N80.
The packaged product is widely used in AC•DC
power suppliers, DC•DC converters and H•bridge
PWM motor drivers.
PAD3:SOURCE
PAD1:GATE
CHIP TOPOGRAPHY
Ø
Ø
Ø
Die size: 2.12mm*2.02mm.
Chip Thickness: 300±m2m0.
Top metal : Al, Backside Metal : Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain•Source Voltage
Symbol
VDS
VGS
ID
Ratings
Unit
V
800
±30
Gate•Source Voltage
V
Drain Current
1.0
A
Power Dissipation (TO•220 Package)
Operation Junction Temperature
Storage Temperature
PD
45
W
°C
°C
•55̚+150
•55̚+150
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain •Source Breakdown Voltage
Gate Threshold Voltage
Drain•Source Leakage Current
Static Drain• Source On State
Resistance
Symbol
BVDSS
VTH
Test conditions
Min
800
3
Typ
Max
•
Unit
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=800V, VGS=0V
•
•
•
V
V
4.5
1
IDSS
•
µA
RDS(on)
IGSS
VGS=10V, ID=0.5A
VGS=±20V, VDS=0V
IS=1A, VGS=0V
•
•
•
•
•
•
16
±10
1.6
W
µA
V
Gate•Source Leakage Current
Source•Drain Diode Forward on
Voltage
VFSD
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.05.30
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