3VD212600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD212600YL is a High voltage N-Channel enhancement
mode power MOS-FET chip fabricated in advanced silicon
epitaxial planar technology.
3
1
¾ Advanced termination scheme to provide enhanced voltage-
blocking capability.
¾ Avalanche Energy Specified
¾ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
PAD1:GATE
PAD3:SOURCE
¾ The chips may packaged in TO-251 type and the typical
equivalent product is 1N60A.
CHIP TOPOGRAPHY
¾ The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
¾ Die size: 2.12mm*2.02mm.
¾ Chip Thickness: 300±20μm.
¾ Top metal: Al, Backside Metal: Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
ID
Ratings
Unit
V
600
±30
Gate-Source Voltage
V
Drain Current
1.0
A
Power Dissipation(TO-251 Package)
Operation Junction Temperature
Storage Temperature
PD
28
W
°C
°C
-55～+150
-55～+150
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Symbol
BVDSS
VTH
Test conditions
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=600V, VGS=0V
Min
Typ
Max
-
Unit
V
600
2.0
-
-
-
-
4.0
1.0
V
IDSS
µA
RDS(on)
IGSS
VGS=10V, ID=0.5A
VGS=±30V, VDS=0V
IS=1.0A, VGS=0V
-
-
-
8.1
8.5
±100
1.4
Ω
nA
V
Gate-Source Leakage Current
Source-Drain Diode Forward On
Voltage
-
-
VFSD
HANGZHOU MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2008.08.23
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