L
3VD186600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD186600YL is a High voltage N-Channel enhancement
mode power MOS-FET chip fabricated in advanced silicon
epitaxial planar technology.
3
1
¾ Advanced termination scheme to provide enhanced voltage-
blocking capability.
¾ Avalanche Energy Specified
¾ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
¾ The chips may packaged in TO-251-3Ltype and the typical
equivalent product is 1N60.
1-Gate PAD
3-Source PAD
¾ The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
CHIP TOPOGRAPHY
¾ Die size: 1.96mm*1.78mm.
¾ Chip Thickness: 300±20μm.
¾ Top metal : Al, Backside Metal : Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Symbol
VDS
VGS
ID
Ratings
600
Unit
V
±30
V
1.0
A
Operation Junction Temperature
Storage Temperature
TJ
150
°C
°C
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Symbol
V(BR)DSS
Vth(GS)
lGSS
Test conditions
Min.
600
2.0
---
Typ.
---
Max. Unit
VGS = 0V, ID=250uA
ID=250uA ,VDS=VGS
VGS=±30V, VDS=0V
VDS=600V, VGS=0V
ID=0.4A, VGS=10V
----
4.0
V
V
---
---
±100
1.0
nA
µA
Ω
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-Drain Diode Forward On
Voltage
IDSS
---
---
RDS(on)
---
---
11
VFSD
ID=1.0A,VGS=0V
---
---
1.4
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http:www.silan.com.cn
REV:1.0
2008.10.15
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