3VD182600YL
3VD182600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø
3VD182600YL is a High voltage N•Channel
enhancement mode power MOS•FET chip fabricated
in advanced silicon epitaxial planar technology.
Advanced termination scheme to provide enhanced
voltage•blocking capability.
Ø
Ø
Ø
Avalanche Energy Specified
Source•to•Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
Ø
Ø
The chips may packaged in TO•92DT•3tyLpe and the
typical equivalent product is 1N60C.
The packaged product is widely used in AC•DC
power suppliers, DC•DC converters and H•bridge
PWM motor drivers.
CHIP TOPOGRAPHY
Ø
Ø
Ø
Die size: 1.90mm*1.75mm.
Chip Thickness: 300±m2m0.
Top metal : Al, Backside Metal : Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain•Source voltage
Gate•Source Voltage
Drain Current
Symbol
VDS
VGS
ID
Ratings
600
Unit
V
±30
V
800
mA
ć
Operation Junction Temperature
Storage Temperature
TJ
150
•55•150
ć
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain•Source Breakdown Voltage
Gate•Threshold Voltage
Gate•body Leakage
Symbol
V(BR)DSS
Vth(GS)
lGSS
Test conditions
Min
600
2
Typ
•••
Max
••••
4
Unit
ID=250uA
V
V
ID=250uA VDS=VGS
VGS=±30V, VDS=0V
VDS=600V, VGS=0V
ID=0.5A, VGS=10V
•••
•••
•••
±100
1
nA
µA
Zero Gate Voltage Drain Current
Drain•Source On•Resistance
Source•Drain Diode Forward on
Voltage
IDSS
•••
•••
RDS(on)
•••
•••
12
VFSD
ID=1.0A,VGS=0V
•••
•••
1.50
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.08.02
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