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3SK317ZR-TL-E

型号：

3SK317ZR-TL-E

描述：

硅N沟道双栅MOS FET的UHF / VHF射频放大器[ Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ]

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

7 页

PDF大小：

76 K

下载PDF手册
3SK317  
Silicon N-Channel Dual Gate MOS FET  
UHF / VHF RF Amplifier  
REJ03G1247-0200  
(Previous: ADE-208-778)  
Rev.2.00  
Aug. 10, 2005  
Features  
•
Low noise characteristics;  
(NF = 1.0 dB typ. at f = 200 MHz)  
High power gain characteristics;  
(PG = 27.6 dB typ. at f = 200 MHz)  
•
Outline  
RENESAS Package code: PTSP0004ZA-A  
(Package name: CMPAK-4)  
2
1. Source  
3
2. Gate1  
3. Gate2  
4. Drain  
1
4
Note: Marking is “ZR-“.  
Rev.2.00 Aug 10, 2005, page 1 of 6  
3SK317  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate1 to source voltage  
Gate2 to source voltage  
Drain current  
Symbol  
VDS  
Ratings  
Unit  
14  
V
V
VG1S  
VG2S  
ID  
±8  
±8  
V
25  
mA  
mW  
°C  
°C  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
100  
Tch  
150  
Tstg  
–55 to +150  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)DSS  
Min  
14  
±8  
±8  
—
—
0
Typ  
—
Max  
—
Unit  
V
Test Conditions  
Drain to source breakdown voltage  
ID = 200 µA , VG1S = VG2S = –3 V  
IG1 = ±10 µA, VG2S = VDS = 0  
IG2 = ±10 µA, VG1S = VDS = 0  
VG1S = ±6 V, VG2S = VDS = 0  
VG2S = ±6 V, VG1S = VDS = 0  
Gate1 to source breakdown voltage V(BR)G1SS  
Gate2 to source breakdown voltage V(BR)G2SS  
—
—
V
—
—
V
Gate1 to source cutoff current  
Gate2 to source cutoff current  
Gate1 to source cutoff voltage  
IG1SS  
IG2SS  
—
±100  
±100  
1
nA  
nA  
V
—
VG1S(off)  
0.2  
VDS = 10 V, VG2S = 3 V,  
ID = 100 µA  
Gate2 to source cutoff voltage  
Drain current  
VG2S(off)  
IDS(op)  
|yfs|  
0
4
0.3  
8
1
V
VDS = 10 V, VG1S = 3 V,  
ID = 100 µA  
14  
—
mA  
mS  
VDS = 6 V, VG1S = 0.75 V,  
VG2S = 3 V  
Forward transfer admittance  
20  
25  
VDS = 6 V, VG2S = 3 V  
ID = 10 mA, f = 1 kHz  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Power gain  
Ciss  
Coss  
Crss  
PG  
2.4  
0.8  
—
3.1  
1.1  
3.5  
1.4  
0.04  
—
pF  
pF  
pF  
dB  
dB  
dB  
dB  
dB  
VDS = 6 V, VG2S = 3 V,  
ID = 10 mA, f = 1 MHz  
0.021  
27.6  
1.0  
24  
—
VDS = 6 V, VG2S = 3 V,  
ID = 10 mA , f = 200 MHz  
Noise figure  
NF  
1.5  
—
Power gain  
PG  
12  
—
15.6  
3
VDS = 6 V, VG2S = 3 V,  
ID = 10 mA, f = 900 MHz  
Noise figure  
NF  
4
Noise figure  
NF  
—
2.7  
3.5  
VDS = 6 V, VG2S = 3 V  
ID = 10 mA, f = 60 MHz  
Rev.2.00 Aug 10, 2005, page 2 of 6  
3SK317  
Main Characteristics  
Maximum Channel Power  
Dissipation Curve  
Typical Output Characteristics  
200  
150  
100  
50  
20  
16  
12  
8
1.2 V  
VG2S = 3 V  
Pulse test  
1.0 V  
0.8 V  
0.6 V  
4
VG1S = 0.4 V  
0
50  
100  
150  
200  
2
4
6
8
10  
0
Ambient Temperature Ta (°C)  
Drain to Source Voltage VDS (V)  
Drain Current vs. Gate1 to Source Voltage  
20  
Drain Current vs. Gate2 to Source Voltage  
20  
3.0 V  
3.0 V  
VDS = 6 V  
VDS = 6 V  
2.5 V  
2.0 V  
Pulse test  
Pulse test  
2.5 V  
2.0 V  
16  
12  
8
16  
12  
8
1.5 V  
1.0 V  
1.5 V  
1.0 V  
4
4
VG1S = 0.5 V  
VG2S = 0.5 V  
3
0
0
1
2
3
4
5
1
2
4
5
Gate1 to Source Voltage VG1S (V)  
Gate2 to Source Voltage VG2S (V)  
Forward Transfer Admittance vs.  
Gate1 to Source Voltage  
Power Gain vs. Drain Current  
50  
30  
24  
18  
12  
6
VDS = 6 V  
VDS = 6 V  
f = 1 kHz  
3 V  
VG2S = 3 V  
f = 200 MHz  
40  
2.5 V  
2 V  
30  
20  
10  
1.5 V  
1 V  
VG2S = 0.5 V  
0
0.4  
0.8  
1.2  
1.6  
2
0
4
8
12  
16  
20  
Gate1 to Source Voltage  
V
(V)  
G1S  
Drain Current ID (mA)  
Rev.2.00 Aug 10, 2005, page 3 of 6  
3SK317  
Noise Figure vs. Drain Current  
Power Gain vs. Drain to Source Voltage  
50  
40  
30  
20  
10  
5
4
3
2
1
V
G2S = 3 V  
VDS = 6 V  
ID = 10 mA  
VG2S = 3 V  
f = 200 MHz  
f = 200 MHz  
0
4
8
12  
16  
20  
0
2
4
6
8
10  
Drain Current ID (mA)  
Drain to Source Voltage VDS (V)  
Noise Figure vs. Drain to Source Voltage  
Power Gain vs. Drain Current  
5
20  
16  
12  
8
VG2S = 3 V  
ID = 10 mA  
4
3
2
1
f = 200 MHz  
VDS = 6 V  
VG2S = 3 V  
f = 900 MHz  
4
0
4
8
12  
16  
20  
0
2
4
6
8
10  
Drain to Source Voltage VDS (V)  
Drain Current ID (mA)  
Noise Figure vs. Drain Current  
Power Gain vs. Drain to Source Voltage  
20  
5
4
3
2
16  
12  
8
VG2S = 3 V  
ID = 10 mA  
f = 900 MHz  
VDS = 6 V  
1
0
4
VG2S = 3 V  
f = 900 MHz  
0
2
4
6
8
10  
4
8
12  
16  
20  
Drain Current ID (mA)  
Drain to Source Voltage VDS (V)  
Rev.2.00 Aug 10, 2005, page 4 of 6  
3SK317  
Noise Figure vs. Drain to Source Voltage  
10  
Noise Figure vs. Drain Current  
VDS = 6 V  
5
4
3
2
1
VG2S = 3 V  
ID = 10 mA  
f = 900 MHz  
V
G2S = 3 V  
8
6
4
2
f = 60 MHz  
0
4
8
12  
16  
20  
0
2
4
6
8
10  
Drain to Source Voltage VDS (V)  
Drain Current ID (mA)  
Noise Figure vs. Drain to Source Voltage  
5
VG2S = 3 V  
I
D = 10 mA  
4
3
2
f = 60 MHz  
1
0
2
4
6
8
10  
Drain to Source Voltage VDS (V)  
Rev.2.00 Aug 10, 2005, page 5 of 6  
3SK317  
Package Dimensions  
JEITA Package Code  
SC-82A  
RENESAS Code  
Package Name  
MASS[Typ.]  
0.006g  
PTSP0004ZA-A  
CMPAK-4(T) / CMPAK-4(T)V  
D
A
e2  
B
e
Q
b1  
c
B
E
HE  
LP  
Reference  
Symbol  
Dimension in Millimeters  
Min  
0.8  
0
Nom  
Max  
1.1  
0.1  
1.0  
L
A
A
A
A
1
2
3
A
A
L1  
0.8  
0.9  
0.25  
0.32  
0.42  
0.3  
A3  
b
b
0.25  
0.35  
0.4  
0.5  
x
S
A
M
e2  
e
b
b
b
1
2
3
0.4  
c
0.1  
0.13  
0.11  
2.0  
0.15  
c
1
A2  
A1  
A
l1  
D
E
e
1.8  
2.2  
1.15  
1.25  
0.65  
1.35  
e
0.6  
2.1  
2
b5  
y
S
H
1.8  
0.3  
0.1  
0.2  
2.4  
0.7  
e1  
E
S
L
L
0.5  
1
b
b1  
b3  
L
0.6  
P
l1  
b
2
x
0.05  
0.05  
0.45  
0.55  
c1  
c
1
y
b
4
5
1
c
c
b
e
b4  
Pattern of terminal position areas  
1.5  
0.2  
l
0.9  
1
A-A Section  
B-B Section  
Q
Ordering Information  
Part Name  
Quantity  
Shipping Container  
φ178 mm Reel, 8 mm Emboss Taping  
3SK317ZR-TL-E  
3000  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.2.00 Aug 10, 2005, page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  
厂商 型号 描述 页数 下载

ETC

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ETC

 		3SK102 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

 		3SK107 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK107E 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK107F 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK107G 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

ETC

 		3SK108Q 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

 		3SK108R 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

 		3SK108S 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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