2SPT6341SD
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
MultiEpitaxial Planar
NPN Power Transistor Die
DESIGNER’S DATA SHEET
.170
.011
Features:
• Recommended replacement for the 2N6338 – 6341 series
• Die Size: 170 x 180 Mils
• Die Thickness: 260 – 330 µm
• Bonding Area:
E
Emitter: 30 x 60 Mils
.180
Base: 40 x 50 Mils
• Maximum Recommended Wire Bonding:
Emitter: Al (15 Mils Dia)
Base: Al (15 Mils Dia)
B
• Metallization:
Top:
60,000Å Al
Bottom: 5,500Å Au / Cr / Ni / Au
Maximum Ratings 4/
Symbol
Value
Units
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
VCEO
VCBO
VEBO
125
180
6
Volts
Volts
Volts
Continuous Collector Current
Peak Collector Current
IC
IC max
25
50
Amps
Continuous Base Current
IB
10
Amps
Power Dissipation @ TC = 25ºC
Derate above 25ºC
200
1.143
W
W/ºC
PD
Operating & Storage Temperature
Maximum Thermal Resistance
Top & Tstg
RθJC
-65 to +200
0.875
ºC
Junction to Case
ºC/W
Electrical Characteristic 4/
Symbol
Min
Typ
Max
Units
Collector – Emitter
Breakdown Voltage
3/
IC = 50mA
125
135
––
Volts
BVCEO
VCE = 125 V; VBE = 1.5 V
VCE = 125 V; VBE = 1.5 V; T= 150ºC
0.020
—
10
1
µA
mA
3/
Collector – Cutoff Current
––
ICEX
3/
Collector – Cutoff Current
Emitter – Cutoff Current
DC Current Gain *
VCB = 180 V
––
––
0.020
0.001
10
uA
uA
ICBO1
3/
VEB = 6 V
100
IEB O
3/
VCE = 2V, IC = 500mA
VCE = 2V, IC = 10A
VCE = 2V, IC = 25A
50
30
12
120
185
120
––
220
––
hFE1
hFE2
hFE3
3/
––
Collector – Emitter Saturation
Voltage*
IC = 10A, IB = 1 A
IC = 25A, IB = 2.5A
––
––
0.35
0.93
1.0
1.8
VCE(Sat)
Volts
Volts
Base – Emitter Saturation
Voltage *
IC = 10A, IB = 1A
IC = 25A, IB = 2.5A
––
––
1.13
1.73
1.8
2.5
VBE(Sat)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0101A
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