1SS355
SILICON EPITAXIAL PLANAR SWITCHING DIODES
PINNING
FEATURES
DESCRIPTION
Cathode
PIN
1
• Small plastic package suitable
for surface mounted design
• High reliability with high surge
current handling capability
Anode
2
2
1
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
APPLICATIONS
• High speed switching
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Symbol
VRM
VR
Value
Unit
V
90
80
V
Mean Rectifying Current
Peak Forward Current
Surge Current (1 s)
IO
100
mA
mA
mA
IFM
225
Isurge
Tj
500
O
C
Junction Temperature
125
O
C
Storage Temperature Range
Tstg
- 55 to + 125
O
Electrical Characteristics (Ta = 25 C)
Parameter
Symbol
VF
Max.
1.2
Unit
V
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 80 V
IR
CT
trr
0.1
3
µA
pF
ns
Capacitance between Terminals
at VR = 0.5 V, f = 1 MHz
Reverse Recovery Time
at VR = 6 V, IF = 10 mA, RL = 100 Ω
4
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
