PHOTO DIODE SILICON PIN LED LAMPS
Package Dimension
SERIES
LPD3330
Description
The LPD3330 series are silicon planar
P/N photodiodes incorporated in plastic
package that simultaneously serve as
filter and are also Transparent for infrared
emission their terminals are soldering
tabs arranged in 2.54mm center to center
spacing due to their design the diodes
can vertically be assembled on pc boards
arrays can be realized by multiple
arrangement versatile photodetectors are
suitable for diodes as well as voltaic cell
operation the signal noise ratio is
particularly favorable even at low
illuminance the P/N photodiode are
outstanding for low junction capacitance
high cut-off frequency and fast switching
times.
5.0 5.9
7.6
8.6
1.5MAX
□0.5
TYP
25.0MIN
They are particularly suitable for IR
sound transmission and remote control
the cathode of LPD3330 photodiode is
marked by a stamping on the package
edge
2.54TYP 1.0MIN
NOTE:1.All dimension are In millimeters tolerance Is ±0.25 unless otherwise noted
2.Specifications are subject to change without notice
‧ MAXIMUM RATINGS (TA=25℃)
Rating
nit
Symbol
Characteristic
Reverse Break Down Voltage
VBR
30
V
mW
℃
Power Dissipation
150
PD
Operating Temperature
Storage Temperature
Topr
Tstg
-30
-40
+60
+60
℃
‧ ELECTRICAL CHARACTERISTICS AT (TA=℃)
Symbol
Typ
Max
Unit
Test Condition
Min
Characteristic
ID
Ee=0mW/c㎡
λP=940nm
VR=10V
VR=5V
Dark Current
－
1.0
30
nA
1.5
2.0
－
－
uA
Isc
Short Circuit Current
Ee=0.5mW/c㎡
λP=940nm
_
mV
Open Circuit Voltage
Total Capacitance
Voc
CT
350
Ee=0.5mW/c㎡
VR=3V f=1MHZ
pF
nm
ns
Ee=0mW/c㎡
－
－
－
20
940
50
－
－
－
Peak Wavelength of Max Sensitivity λsmax
tr,tf
Rise Time,Fall Time
VR=10V RL=1KΩ
Date:17 - Aug - 2005
DOC.NO:QW0905-LPD3330
REV:B
