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PZTA42_07

型号：

PZTA42_07

描述：

NPN硅高压晶体管低集电极 - 发射极饱和电压[ NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage ]

品牌：

INFINEON[ Infineon ]

页数：

6 页

PDF大小：

67 K

下载PDF手册
PZTA42  
NPN Silicon High-Voltage Transistors  
• High breakdown voltage  
4
3
• Low collector-emitter saturation voltage  
• Complementary type: PZTA92 (PNP)  
2
1
1)  
• Pb-free (RoHS compliant) package  
• Qualified according AEC Q101  
Type  
Marking  
Pin Configuration  
Package  
SOT223  
PZTA42  
PZTA42  
1=B 2=C 3=E 4=C  
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
300  
300  
6
Unit  
V
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CEO  
CBO  
EBO  
500  
100  
1.5  
mA  
W
I
C
Base current  
I
B
Total power dissipation-  
P
tot  
T ≤ 124 °C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
2)  
K/W  
Junction - soldering point  
R
≤ 17  
thJS  
1Pb-containing package may be available upon special request  
2For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
1
2007-04-26  
PZTA42  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
300  
-
-
-
-
-
-
V
Collector-emitter breakdown voltage  
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
I = 1 mA, I = 0  
C
B
Collector-base breakdown voltage  
I = 100 µA, I = 0  
300  
6
C
E
Emitter-base breakdown voltage  
I = 100 µA, I = 0  
E
C
Collector-base cutoff current  
I
I
µA  
V
V
= 200 V, I = 0  
-
-
-
-
-
-
0.1  
20  
CB  
CB  
E
= 200 V, I = 0 , T = 150 °C  
E
A
100 nA  
Emitter-base cutoff current  
EBO  
V
= 5 V, I = 0  
EB  
C
1)  
-
DC current gain  
h
FE  
I = 1 mA, V = 10 V  
25  
40  
40  
-
-
-
-
-
-
C
CE  
I = 10 mA, V = 10 V  
C
CE  
I = 30 mA, V = 10 V  
C
CE  
1)  
Collector-emitter saturation voltage  
I = 20 mA, I = 2 mA  
V
V
-
-
0.5  
V
CEsat  
BEsat  
C
B
1)  
Base emitter saturation voltage  
I = 20 mA, I = 2 mA  
-
-
0.9  
C
B
AC Characteristics  
-
-
70  
-
-
MHz  
pF  
Transition frequency  
f
T
I = 20 MHz, V = 10 V, f = 20 MHz  
C
CE  
3
Collector-base capacitance  
= 20 V, f = 1 MHz  
C
cb  
V
CB  
1Pulse test: t < 300µs; D < 2%  
2
2007-04-26  
PZTA42  
DC current gain h = ƒ(I )  
Collector current I = ƒ(V )  
C BE  
FE  
C
V
= 10 V  
V
= 10V  
CE  
CE  
PZTA 42/43  
EHP00726  
103  
mA  
PZTA 42/43  
EHP00724  
103  
5
hFE  
ΙC  
102  
5
102  
5
101  
5
2
101  
5
100  
5
10-1  
100  
10 -1  
5 10 0  
5 10 1  
5 10 2 mA 10 3  
0
0.5  
1.0  
V
1.5  
VBE  
Ι C  
Collector cutoff current I  
= ƒ(T )  
Transition frequency f = ƒ(I )  
CBO  
A
T
C
V
= 200 V  
V
= 10 V  
CE  
CB  
PZTA 42/43  
EHP00725  
PZTA 42/43  
EHP00723  
104  
103  
MHz  
nA  
ΙCBO  
max  
103  
5
fT  
102  
5
102  
typ  
101  
5
5
100  
5
10-1  
101  
10 0  
5
10 1  
5
10 2  
5
10 3  
0
50  
100  
˚C 150  
mA  
Ι C  
TA  
3
2007-04-26  
PZTA42  
Collector-base capacitance C = ƒ(V )  
Total power dissipation P = ƒ(T )  
tot S  
cb  
CB  
Emitter-base capacitance C = ƒ(V )  
eb  
EB  
90  
pF  
1.8  
W
70  
60  
50  
40  
30  
20  
10  
0
1.2  
0.9  
0.6  
0.3  
0
CEB  
CCB  
22  
V
0
4
8
12  
16  
0
15 30 45 60 75 90 105 120  
150  
°C  
V
(V  
)
T
S
CB EB  
Permissible Pulse Load  
P
/P  
= ƒ(t )  
totmax totDC p  
PZTA 42/43  
EHP00320  
103  
5
Ptotmax  
PtotDC  
t p  
t p  
T
D
=
T
102  
5
D
0
=
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
101  
5
100  
10-6 10-5 10-4 10-3 10-2  
s
100  
t p  
4
2007-04-26  
Package SOT223  
PZTA42  
Package Outline  
±0.1  
1.6  
±0.2  
6.5  
A
±0.1  
0.1 MAX.  
3
B
4
3
1
2
2.3  
±0.1  
0.7  
4.6  
0...10˚  
M
0.25  
A
M
0.25  
B
Foot Print  
3.5  
1.2 1.1  
Marking Layout (Example)  
Manufacturer  
2005, 24 CW  
Date code (YYWW)  
BCP52-16  
Type code  
Pin 1  
Packing  
Reel ø180 mm = 1.000 Pieces/Reel  
Reel ø330 mm = 4.000 Pieces/Reel  
0.3 MAX.  
8
1.75  
6.8  
Pin 1  
5
2007-04-26  
PZTA42  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
6
2007-04-26  
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