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VUO16

型号:

VUO16

描述:

三相整流桥[ Three Phase Rectifier Bridge ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

54 K

VUO 16  
IdAVM = 20 A  
VRRM = 800-1800 V  
Three Phase  
Rectifier Bridge  
5
4
1/2  
VRSM  
V
VRRM  
V
Type  
2
1
10  
8
6
900  
800  
VUO 16-08NO1  
VUO 16-12NO1  
VUO 16-14NO1  
VUO 16-16NO1  
VUO 16-18NO1  
1300  
1500  
1700  
1900  
1200  
1400  
1600  
1800  
10  
8
4/5  
6
Symbol  
Test Conditions  
Maximum Ratings  
Features  
Package with DCB ceramic base plate  
Isolation voltage 3600 V~  
Planar passivated chips  
Blocking voltage up to 1800 V  
Low forward voltage drop  
Leads suitable for PC board soldering  
UL registered E72873  
IdAV  
IdAV  
IdAVM  
TK = 90°C, module  
TA = 45°C (RthKA = 0.5 K/W), module  
module  
15  
20  
20  
A
A
A
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
100  
106  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
85  
90  
A
A
Applications  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
50  
47  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
36  
33  
A2s  
A2s  
Field supply for DC motors  
Advantages  
TVJ  
TVJM  
Tstg  
-40...+130  
130  
-40...+125  
°C  
°C  
°C  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
VISOL  
50/60 Hz, RMS t = 1 min  
IISOL £ 1 mA t = 1 s  
Mounting torque (M5)  
(10-32UNF)  
3000  
3600  
V~  
V~  
cycling  
Dimensions in mm (1 mm = 0.0394")  
Md  
2 - 2.5  
18-22  
Nm  
lb.in.  
Weight  
typ.  
35  
g
Symbol  
IR  
Test Conditions  
Characteristic Values  
VR = VRRM  
VR = VRRM  
TVJ = 25°C  
TVJ = TVJM  
£
£
0.3 mA  
5
1.15  
0.8  
mA  
VF  
IF = 7 A;  
TVJ = 25°C  
£
V
VT0  
rT  
For power-loss calculations only  
V
50 mW  
RthJH  
per diode,  
per module,  
120° rect.  
120° rect.  
4.5 K/W  
0.75 K/W  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
12.7 mm  
9.4 mm  
50 m/s2  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  
VUO 16  
30  
A
100  
A
100  
50 Hz  
0.8 x VRRM  
A2s  
IFSM  
IF  
25  
20  
15  
10  
5
d
I2 t  
80  
60  
40  
20  
0
TVJ = 25°C  
TVJ = 130°C  
TVJ = 45°C  
TVJ = 45°C  
max.  
typ.  
TVJ = 130°C  
TVJ = 130°C  
0
0.0  
10  
0.5  
1.0  
1.5  
2.0  
2.5  
10-3  
10-2  
10-1  
100  
1
ms  
10  
s
V
t
t
VF  
Fig. 1 Forward current versus voltage  
drop per diode  
Fig. 2 Surge overload current per diode  
IFSM: Crest value. t:duration  
Fig. 3 I2t versus time (1-10 ms)  
per diode  
80  
25  
A
Ptot  
W
RthKA K/W  
IdAVM  
70  
60  
50  
40  
30  
20  
10  
0
0.5  
1
1.5  
2
3
4
20  
15  
10  
5
6
0
0
5
10  
15  
20  
25  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100 125 150  
°C  
A
°C  
TA  
TK  
IdAVM  
Fig. 4 Power dissipation versus direct output current and ambient temperature  
Fig. 5 Maximum forward current at  
heatsink temperature TK  
5
ZthJK  
K/W  
4
ZthJK  
3
2
1
0
Constants for ZthJK calculation:  
i
Rth (K/W)  
ti (s)  
1
2
3
4
0.015  
0.1  
1.835  
2.55  
0.008  
0.02  
0.05  
0.4  
10-3  
10-2  
10-1  
100  
101  
102  
s
t
Fig. 6 Transient thermal impedance junction to heatsink per diode  
© 2000 IXYS All rights reserved  
2 - 2  
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