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ZXTN5551FLTA

型号:

ZXTN5551FLTA

描述:

160V , SOT23 , NPN高压晶体管[ 160V, SOT23, NPN High voltage transistor ]

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

8 页

PDF大小:

207 K

ZXTN5551FL  
160V, SOT23, NPN High voltage transistor  
Summary  
BV  
BV  
> 160V  
> 6V  
CEO  
EBO  
I
= 600mA  
C(cont)  
P = 330mW  
D
Complementary part number ZXTP5401FL  
Description  
C
E
A high voltage NPN transistor in a small outline surface mount package.  
Features  
B
160V rating  
SOT23 package  
Applications  
E
B
High voltage amplification  
C
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
Pinout - top view  
ZXTN5551FLTA  
7
8
3000  
Device marking  
N51  
Issue 1 - August 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  
ZXTN5551FL  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
V
V
180  
V
CBO  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
160  
6
V
V
(a)  
I
600  
330  
mA  
mW  
Continuous collector current  
C
(a)  
P
Power dissipation at T  
Linear derating factor  
=25°C  
D
amb  
2.64  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
-55 to 150  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
379  
°C/W  
Junction to ambient  
JA  
NOTES:  
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
Issue 1 - August 2007  
© Zetex Semiconductors plc 2007  
2
www.zetex.com  
ZXTN5551FL  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol Min. Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
BV  
BV  
180  
160  
270  
200  
V
V
I = 100A  
C
CBO  
CEO  
(*)  
Collector-emitter  
breakdown voltage (base  
open)  
I = 1mA  
C
Emitter-base breakdown  
voltage  
BV  
6
7.85  
<1  
V
I = 10A  
E
EBO  
Collector cut-off current  
I
50  
50  
nA  
A  
V
V
V
= 120V  
CBO  
CB  
CB  
= 120V, T  
= 100°C  
amb  
(*)  
Collector-emitter saturation V  
voltage  
65  
150  
I = 10mA, I = 1mA  
CE(sat)  
BE(sat)  
C
B
(*)  
(*)  
(*)  
115  
760  
840  
135  
145  
65  
200  
1000  
1200  
V
I = 50mA, I = 5mA  
C
B
Base-emitter saturation  
voltage  
V
mV  
mV  
I = 10mA, I = 1mA  
C
B
I = 50mA, I = 5mA  
C
B
(*)  
Static forward current  
transfer ratio  
h
80  
80  
30  
I = 1mA, V = 5V  
FE  
C
CE  
(*)  
(*)  
250  
I = 10mA, V = 5V  
C
CE  
I = 50mA, V = 5V  
C
CE  
Transition frequency  
f
130  
MHz I = 10mA, V = 10V,  
T
C
CE  
f = 100MHz  
(*)  
Output capacitance  
Small signal  
C
6
pF  
V
= 10V, f = 1MHz  
OBO  
CB  
h
50  
260  
I = 10mA, V = 10V,  
FE  
C
CE  
(†)  
f=1kHz  
Delay time  
Rise time  
t
t
t
t
95  
64  
ns  
ns  
ns  
ns  
V
= 10V, I = 10mA, I  
= 1mA  
=
B1  
(d)  
CC  
C
I
B2  
(r)  
(s)  
(f)  
Storage time  
Fall time  
1256  
140  
NOTES:  
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.  
(†) Periodic sample test only  
Issue 1 - August 2007  
© Zetex Semiconductors plc 2007  
3
www.zetex.com  
ZXTN5551FL  
Typical characteristics  
Issue 1 - August 2007  
© Zetex Semiconductors plc 2007  
4
www.zetex.com  
ZXTN5551FL  
Intentionally left blank  
Issue 1 - August 2007  
© Zetex Semiconductors plc 2007  
5
www.zetex.com  
ZXTN5551FL  
Intentionally left blank  
Issue 1 - August 2007  
© Zetex Semiconductors plc 2007  
6
www.zetex.com  
ZXTN5551FL  
Package outline - SOT23  
E
e
e1  
b
3 leads  
D
L1  
E1  
A
L
c
A1  
Dim.  
Millimeters  
Min. Max.  
Inches  
Dim.  
Millimeters  
Min. Max.  
1.90 NOM  
Inches  
Min.  
-
Max.  
0.044  
0.004  
0.020  
0.008  
0.120  
Min.  
Max.  
A
A1  
b
-
1.12  
0.10  
0.50  
0.20  
3.04  
e1  
E
0.075 NOM  
0.01  
0.30  
0.085  
2.80  
0.0004  
0.012  
0.003  
0.110  
2.10  
2.64  
1.40  
0.60  
0.62  
-
0.083  
0.047  
0.104  
0.055  
E1  
L
1.20  
0.25  
0.45  
-
c
0.0098 0.0236  
D
e
L1  
-
0.018  
-
0.024  
-
0.95 NOM  
0.037 NOM  
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Issue 1 - August 2007  
© Zetex Semiconductors plc 2007  
7
www.zetex.com  
ZXTN5551FL  
Definitions  
Product change  
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or  
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.  
Applications disclaimer  
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for  
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is  
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights  
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,  
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,  
opportunity or consequential loss in the use of these circuit applications, under any circumstances.  
Life support  
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body  
or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or to affect its safety or effectiveness.  
Reproduction  
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the  
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a  
representation relating to the products or services concerned.  
Terms and Conditions  
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two  
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  
Quality of product  
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our  
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork  
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  
Devices suspected of being affected should be replaced.  
Green compliance  
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-  
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce  
the use of hazardous substances and/or emissions.  
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with  
WEEE and ELV directives.  
Product status key:  
“Preview”  
“Active”  
Future device intended for production at some point. Samples may be available  
Product status recommended for new designs  
“Last time buy (LTB)”  
Device will be discontinued and last time buy period and delivery is in effect  
“Not recommended for new designs” Device is still in production to support existing designs and production  
“Obsolete”  
Production has been discontinued  
Datasheet status key:  
“Draft version”  
This term denotes a very early datasheet version and contains highly provisional information, which  
may change in any manner without notice.  
“Provisional version”  
“Issue”  
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  
However, changes to the test conditions and specifications may occur, at any time and without notice.  
This term denotes an issued datasheet containing finalized specifications. However, changes to  
specifications may occur, at any time and without notice.  
Zetex sales offices  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
© 2007 Published by Zetex Semiconductors plc  
Issue 1 - August 2007  
© Zetex Semiconductors plc 2007  
8
www.zetex.com  
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