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IXGH10N60U1

型号：

IXGH10N60U1

描述：

低VCE （ sat）的IGBT与二极管，高速IGBT与二极管Combi机包[ Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

114 K

下载PDF手册
Low VCE(sat) IGBT with Diode  
High speed IGBT with Diode  
CombiPacks  
VCES  
IC25  
VCE(sat)  
600 V  
20 A 2.5 V  
20 A 3.0 V  
IXGH10N60U1  
IXGH10N60AU1 600 V  
TO-247 AD  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
IC25  
IC90  
ICM  
TC = 25°C  
20  
10  
40  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
SSOA  
VGE= 15 V, TVJ = 125°C, RG = 150 Ω  
ICM = 20  
A
(RBSOA)  
Clamped inductive load, L = 300 µH  
@ 0.8 VCES  
Features  
PC  
TC = 25°C  
100  
W
l
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
International standard package  
JEDEC TO-247 AD  
TJM  
Tstg  
l
IGBT and anti-parallel FRED in one  
package  
-55 ... +150  
2nd generation HDMOSTM process  
Low VCE(sat)  
l
l
Md  
Mounting torque (M3)  
1.13/10 Nm/lb.in.  
Weight  
6
g
- for low on-state conduction losses  
l
l
MOS Gate turn-on  
- drive simplicity  
Fast RecoveryEpitaxial Diode FRED)  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- soft recovery with low IRM  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switch-mode and resonant-mode  
power supplies  
l
l
l
BVCES  
VGE(th)  
IC = 750 µA, VGE = 0 V  
IC = 500 µA, VCE = VGE  
600  
2.5  
V
V
l
5.5  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
260 µA  
2.5 mA  
Advantages  
l
Space savings (two devices in one  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
package)  
Easy to mount with 1 screw  
(isolated mounting screw hole)  
Reduces assembly time and cost  
l
VCE(sat)  
IC = IC90, VGE = 15 V  
10N60U1  
10N60AU1  
2.5  
3.0  
V
V
l
© 1996 IXYS All rights reserved  
91751G(3/96)  
IXGH10N60U1 IXGH10N60AU1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
TO-247 AD Outline  
min. typ. max.  
IC = IC90; VCE = 10 V,  
4
8
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
750  
125  
30  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
50  
15  
25  
70 nC  
25 nC  
45 nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
td(on)  
tri  
100  
200  
0.4  
ns  
ns  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = Roff = 150 Ω  
1 = Gate  
2 = Collector  
3 = Emitter  
Eon  
td(off)  
tfi  
mJ  
ns  
600  
300  
0.6  
Switching times may increase  
for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
Tab = Collector  
10N60AU1  
10N60AU1  
ns  
,
Eoff  
mJ  
td(on)  
tri  
100  
200  
1
ns  
ns  
Inductive load, TJ = 125°C  
Eon  
td(off)  
tfi  
mJ  
IC = IC90, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = Roff = 150  
Ω
900 1500 ns  
570 2000 ns  
10N60U1  
10N60AU1  
360  
600 ns  
Switching times may increase  
for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
Eoff  
10N60U1  
10N60AU1  
2.0  
1.2  
mJ  
mJ  
RthJC  
RthCK  
1.25 K/W  
K/W  
0.25  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
min. typ. max.  
1.75  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 64 A/µs  
VR = 360 V  
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C  
2.5  
165  
35  
A
ns  
50 ns  
TJ =100°C  
RthJC  
2.5 K/W  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGH10N60U1 IXGH10N60AU1  
Fig. 1 Saturation Characteristics  
Fig. 2  
Output Characterstics  
20  
18  
16  
14  
12  
10  
8
100  
VGE=15V 13V  
11V  
TJ = 25°C  
TJ = 25°C  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
9V  
VGE = 15V  
13V  
11V  
9V  
7V  
6
4
2
7V  
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig. 3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig. 4  
Temperature Dependence  
of Output Saturation Voltage  
10  
9
8
7
6
5
4
3
2
1
0
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
TJ = 25°C  
VGE = 15V  
IC = 20A  
I
C = 10A  
IC = 20A  
I
C = 10A  
IC = 5A  
I
C = 5A  
5
6
7
8
9
10 11 12 13 14 15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
Fig. 5 Input Admittance  
Fig. 6  
Temperature Dependence of  
Breakdown and Threshold Voltage  
20  
18  
16  
14  
12  
10  
8
1.2  
VGE(th)  
IC = 250µA  
VCE = 10 V  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
BVCES  
IC = 250µA  
TJ = 25°C  
TJ =125°C  
6
4
TJ = - 40°C  
2
0
0
1
2
3
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
© 1996 IXYS All rights reserved  
IXGH10N60U1 IXGH10N60AU1  
Fig.7 Gate Charge  
Fig.8 Turn-Off Safe Operating Area  
15  
13  
11  
9
100  
VCE = 480V  
IG = 10mA  
IC = 10A  
TJ = 125°C  
10  
dV/dt < 3V/ns  
1
7
5
0.1  
3
1
0.01  
0
10  
20  
30  
40  
50  
0
100  
200  
300  
400  
500  
600  
Total Gate Charge - (nC)  
VCE - Volts  
Fig.9 Capacitance Curves  
800  
700  
600  
500  
400  
300  
200  
100  
0
Cies  
f = 1MHz  
Coes  
Cres  
0
5
10  
15  
20  
25  
VCE - Volts  
Fig.10 Transient Thermal Impedance  
1.00  
0.10  
0.01  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
Single Pulse  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGH10N60U1 IXGH10N60AU1  
Fig.11 Maximum Forward Voltage Drop  
Fig.12  
Peak Forward Voltage VFR and  
Forward Recovery Time tFR  
40  
35  
30  
25  
20  
15  
10  
5
25  
20  
15  
10  
5
1000  
800  
600  
400  
200  
0
TJ = 125°C  
IF = 8A  
VFR  
TJ = 100°C  
t
TJ = 150°C  
TJ = 25°C  
fr  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0
50  
100  
150  
200  
250  
300  
Voltage Drop - Volts  
diF/dt - A/µs  
Fig.13 Junction Temperature Dependence  
off IRM and Qr  
Fig.14  
Reverse Recovery Charge  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
TJ = 100°C  
R = 350V  
F = 8A  
V
I
max  
IRM  
Qr  
0
40  
80  
120  
160  
1
10  
100  
1000  
TJ - Degrees C  
diF /dt - A/µs  
Fig.15 Peak Reverse Recovery Current  
Fig.16  
Reverse Recovery Time  
25  
20  
15  
10  
5
400  
300  
200  
100  
0
TJ = 100°C  
VR = 350V  
IF = 8A  
TJ = 100°C  
R = 350V  
IF = 8A  
V
max  
0
0
100  
200  
300  
400  
0
100  
200  
300  
400  
diF /dt - A/µs  
diF /dt - A/µs  
© 1996 IXYS All rights reserved  
IXGH10N60U1 IXGH10N60AU1  
Fig.17 Diode Transient Thermal resistance junction to case  
3.0  
2.0  
1.0  
0.1  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
厂商 型号 描述 页数 下载

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 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

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 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

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