IXGH32N50BU1 IXGH32N50BU1S
TO-247 AD Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
15
20
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
P
Cies
Coes
Cres
2500
270
70
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qg
125
23
150 nC
35 nC
75 nC
Qge
Qgc
e
50
Dim.
Millimeter
Min. Max.
Inches
Inductive load, TJ = 25°C
Min. Max.
td(on)
tri
td(off)
tfi
25
30
ns
ns
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
100
80
200 ns
150 ns
1.5 mJ
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
0.7
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
td(on)
tri
25
35
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
.780 .800
.177
Eon
td(off)
tfi
1
mJ
ns
P
3.55
5.89
3.65
.140 .144
6.40 0.232 0.252
120
120
Q
ns
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
1.2
mJ
TO-247 SMD Outline
RthJC
RthCK
0.62 K/W
K/W
0.25
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = IC90, VGE = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.6
15
V
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs
10
TJ =125°C 150
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C 35
A
ns
VR = 360 V
50 ns
1. Gate
2. Collector
3. Emitter
4. Collector
RthJC
1 K/W
Min. Recommended Footprint (Dimensions in inches and (mm))
Dim.
Millimeter
Max.
Inches
Min. Max.
Min.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
1.14
1.91
1.40
2.13
.045 .055
.075 .084
C
D
0.61
20.80
0.80
21.34
.024 .031
.819 .840
E
e
15.75
5.45
16.13
BSC
.620 .635
.215 BSC
L
4.90
2.70
2.10
0.00
1.90
5.10
2.90
2.30
0.10
2.10
.193 .201
.106 .114
.083 .091
L1
L2
L3
L4
.00
.004
.075 .083
ØP
Q
3.55
5.59
3.65
6.20
.140 .144
.220 .244
R
S
4.32
6.15
4.83
BSC
.170 .190
.242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
