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LY615128UL

型号：

LY615128UL

描述：

5V 512K ×8位高速CMOS SRAM[ 5V 512K X 8 BIT HIGH SPEED CMOS SRAM ]

品牌：

LYONTEK[ Lyontek Inc. ]

页数：

11 页

PDF大小：

150 K

下载PDF手册
®
LY615128  
5V 512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
REVISION HISTORY  
Revision  
Rev. 1.0  
Rev. 1.1  
Rev. 1.2  
Description  
Initial Issue  
Revised Package Outline Dimension(TSOP-II)  
Revised VTERM to VT1 and VT2  
Issue Date  
Apr.28.2006  
Apr.12.2007  
Apr.17.2009  
Revised Test Condition of ICC/ISB1/IDR  
FEATURES ORDERING INFORMATION  
Revised  
&
Lead free and green package available to Green package  
available  
ABSOLUTE MAXIMUN RATINGS  
Deleted TSOLDER in  
ORDERING INFORMATION  
Added packing type in  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
0
®
LY615128  
5V 512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
FEATURES  
GENERAL DESCRIPTION  
The LY615128 is a 4,194,304-bit low power CMOS  
static random access memory organized as 524,288  
words by 8 bits. It is fabricated using very high  
performance, high reliability CMOS technology. Its  
standby current is stable within the range of  
operating temperature.  
„ Fast access time : 10/12/15ns  
„ Low power consumption:  
Operating current: 200/180/150mA (TYP.)  
Standby current: 1mA (TYP.)  
„ Single 5V power supply  
„ All inputs and outputs TTL compatible  
„ Fully static operation  
The LY615128 is well designed for low power  
application, and particularly well suited for battery  
back-up nonvolatile memory application.  
„ Tri-state output  
„ Data retention voltage : 2.0V (MIN.)  
„ Green package available  
„ Package : 44-pin 400 mil TSOP-II  
The LY615128 operates from a single power  
supply of 5V and all inputs and outputs are fully TTL  
compatible  
PRODUCT FAMILY  
Product  
Family  
Operating  
Temperature  
0 ~ 70℃  
Power Dissipation  
Standby(ISB1,TYP.) Operating(Icc,TYP.)  
1mA 200/180/150mA  
Vcc Range  
4.5 ~ 5.5V  
Speed  
LY615128  
10/12/15 ns  
FUNCTIONAL BLOCK DIAGRAM  
PIN DESCRIPTION  
SYMBOL  
DESCRIPTION  
Address Inputs  
A0 - A18  
Vcc  
Vss  
DQ0 – DQ7 Data Inputs/Outputs  
CE#  
WE#  
OE#  
VCC  
VSS  
Chip Enable Inputs  
Write Enable Input  
Output Enable Input  
Power Supply  
512Kx8  
MEMORY ARRAY  
A0-A18  
DECODER  
Ground  
NC  
No Connection  
I/O DATA  
CIRCUIT  
DQ0-DQ7  
COLUMN I/O  
CE#  
WE#  
OE#  
CONTROL  
CIRCUIT  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
1
®
LY615128  
5V 512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
PIN CONFIGURATION  
NC  
NC  
1
2
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
NC  
NC  
A4  
3
NC  
A3  
4
A5  
A2  
5
A6  
A1  
6
A7  
A0  
7
A8  
CE#  
DQ0  
DQ1  
Vcc  
Vss  
DQ2  
DQ3  
WE#  
A18  
A17  
A16  
A15  
A14  
NC  
8
OE#  
DQ7  
DQ6  
Vss  
Vcc  
DQ5  
DQ4  
A9  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
A10  
A11  
A12  
A13  
NC  
NC  
NC  
NC  
TSOP-II  
ABSOLUTE MAXIMUN RATINGS*  
PARAMETER  
Voltage on VCC relative to VSS  
Voltage on any other pin relative to VSS  
Operating Temperature  
Storage Temperature  
SYMBOL  
VT1  
RATING  
-0.5 to 4.6  
-0.5 to VCC+0.5  
0 to 70(C grade)  
-65 to 150  
1
UNIT  
V
VT2  
V
℃
TA  
℃
TSTG  
PD  
Power Dissipation  
W
DC Output Current  
IOUT  
50  
mA  
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this  
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
2
®
LY615128  
5V 512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
TRUTH TABLE  
CE#  
H
OE#  
X
WE#  
X
SUPPLY CURRENT  
MODE  
I/O OPERATION  
High-Z  
Standby  
ISB,ISB1  
ICC  
Output Disable  
Read  
L
H
H
High-Z  
L
L
H
DOUT  
ICC  
Write  
L
X
L
DIN  
ICC  
Note: H = VIH, L = VIL, X = Don't care.  
DC ELECTRICAL CHARACTERISTICS  
SYMBOL  
TEST CONDITION  
MIN.  
4.5  
2.2  
- 0.3  
- 1  
TYP. *4  
5.0  
MAX.  
5.5  
VCC+0.3  
0.6  
UNIT  
PARAMETER  
Supply Voltage  
VCC  
V
V
V
*1  
Input High Voltage  
Input Low Voltage  
Input Leakage Current  
Output Leakage  
Current  
VIH  
VIL  
-
-
-
*2  
ILI  
V
V
CC ≧ VIN ≧ VSS  
CC ≧ VOUT ≧ VSS,  
Output Disabled  
1
A
µ
ILO  
- 1  
-
1
A
µ
Output High Voltage  
Output Low Voltage  
VOH IOH = -4mA  
2.4  
-
-
-
V
V
mA  
mA  
mA  
mA  
VOL  
IOL = 8mA  
-
-
-
-
-
0.4  
280  
250  
220  
50  
220  
200  
180  
5
Cycle time = Min.  
CE# = VIL , II/O = 0mA  
Others at VIL or VIH  
-10  
-12  
-15  
Average Operating  
Power supply Current  
ICC  
ISB  
CE# = VIH, others at VIL or VIH  
CE# ≧VCC - 0.2V  
Others at 0.2V or VCC - 0.2V  
Standby Power  
Supply Current  
ISB1  
-
1
10*5  
mA  
Notes:  
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.  
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.  
3. Over/Undershoot specifications are characterized, not 100% tested.  
4. Typical values are included for reference only and are not guaranteed or tested.  
℃
Typical valued are measured at VCC = VCC(TYP.) and TA = 25  
5. 1mA for special request  
CAPACITANCE (TA = 25℃, f = 1.0MHz)  
PARAMETER  
Input Capacitance  
Input/Output Capacitance  
SYMBOL  
MIN.  
-
-
MAX  
8
10  
UNIT  
pF  
pF  
CIN  
CI/O  
Note : These parameters are guaranteed by device characterization, but not production tested.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
3
®
LY615128  
5V 512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
AC TEST CONDITIONS  
Input Pulse Levels  
0.2V to VCC - 0.2V  
Input Rise and Fall Times  
Input and Output Timing Reference Levels  
Output Load  
3ns  
1.5V  
CL = 30pF + 1TTL, IOH/IOL = -8mA/16mA  
AC ELECTRICAL CHARACTERISTICS  
(1) READ CYCLE  
PARAMETER  
SYM.  
tRC  
UNIT  
LY615128-10  
LY615128-12  
LY615128-15  
MIN.  
MAX.  
MIN.  
MAX.  
MIN.  
MAX.  
Read Cycle Time  
Address Access Time  
Chip Enable Access Time  
Output Enable Access Time  
Chip Enable to Output in Low-Z  
Output Enable to Output in Low-Z  
Chip Disable to Output in High-Z  
Output Disable to Output in High-Z tOHZ  
Output Hold from Address Change  
10  
-
-
-
10  
10  
5
12  
-
-
-
12  
12  
6
15  
-
-
-
15  
15  
7
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAA  
tACE  
tOE  
tCLZ  
tOLZ  
tCHZ  
-
-
-
*
*
*
2
0
-
-
-
5
3
0
-
-
-
6
4
0
-
-
-
7
*
-
5
-
6
-
7
tOH  
3
-
3
-
3
-
(2) WRITE CYCLE  
PARAMETER  
SYM.  
tWC  
tAW  
tCW  
tAS  
UNIT  
LY615128-10  
LY615128-12  
LY615128-15  
MIN.  
10  
8
MAX.  
MIN.  
12  
10  
10  
0
MAX.  
MIN.  
15  
12  
12  
0
MAX.  
Write Cycle Time  
-
-
-
-
-
-
-
-
-
6
-
-
-
-
-
-
-
-
-
7
-
-
-
-
-
-
-
-
-
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Valid to End of Write  
Chip Enable to End of Write  
Address Set-up Time  
Write Pulse Width  
Write Recovery Time  
Data to Write Time Overlap  
Data Hold from End of Write Time  
Output Active from End of Write  
Write to Output in High-Z  
8
0
8
0
tWP  
tWR  
tDW  
tDH  
tOW  
9
0
7
0
3
-
10  
0
8
6
0
2
-
0
4
-
*
tWHZ  
*
*These parameters are guaranteed by device characterization, but not production tested.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
4
®
LY615128  
5V 512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
TIMING WAVEFORMS  
READ CYCLE 1 (Address Controlled) (1,2)  
tRC  
Address  
Dout  
tAA  
tOH  
Previous Data Valid  
Data Valid  
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)  
tRC  
Address  
tAA  
CE#  
tACE  
OE#  
tOE  
tOLZ  
tOH  
tOHZ  
tCHZ  
tCLZ  
High-Z  
Dout  
High-Z  
Data Valid  
Notes :  
1.WE# is high for read cycle.  
2.Device is continuously selected OE# = low, CE# = low.  
3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter.  
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.  
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
5
®
LY615128  
5V 512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)  
tWC  
Address  
tAW  
CE#  
tCW  
tAS  
tWP  
tWR  
WE#  
tWHZ  
TOW  
High-Z  
Dout  
Din  
(4)  
(4)  
tDW  
tDH  
Data Valid  
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)  
tWC  
Address  
tAW  
CE#  
tAS  
tWR  
tCW  
tWP  
WE#  
Dout  
Din  
tWHZ  
High-Z  
(4)  
tDW  
tDH  
Data Valid  
Notes :  
1.WE#, CE# must be high during all address transitions.  
2.A write occurs during the overlap of a low CE#, low WE#.  
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be  
placed on the bus.  
4.During this period, I/O pins are in the output state, and input signals must not be applied.  
5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.  
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
6
®
LY615128  
5V 512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
DATA RETENTION CHARACTERISTICS  
PARAMETER  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
VCC for Data Retention  
VDR CE# ≧ VCC - 0.2V  
2.0  
-
5.5  
V
VCC = 2.0V  
Data Retention Current  
IDR  
CE# ≧ VCC - 0.2V  
Others at 0.2V or VCC - 0.2V  
See Data Retention  
Waveforms (below)  
-
0.5  
1
mA  
Chip Disable to Data  
Retention Time  
Recovery Time  
tCDR  
tR  
0
-
-
-
-
ns  
ns  
tRC  
*
tRC = Read Cycle Time  
*
DATA RETENTION WAVEFORM  
VDR ≧ 2.0V  
Vcc(min.)  
Vcc  
Vcc(min.)  
tCDR  
tR  
VIH  
CE# ≧ Vcc-0.2V  
VIH  
CE#  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
7
®
LY615128  
5V 512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
PACKAGE OUTLINE DIMENSION  
Ⅱ
44-pin 400mil TSOP-  
Package Outline Dimension  
DIMENSIONS IN MILLMETERS  
DIMENSIONS IN MILS  
SYMBOLS  
MIN.  
-
NOM.  
-
MAX.  
1.20  
0.15  
1.05  
0.45  
0.21  
18.618  
12.014  
10.363  
-
MIN.  
NOM.  
-
MAX.  
A
A1  
A2  
b
-
47.2  
5.9  
41.3  
17.7  
8.3  
733  
473  
408  
-
0.05  
0.95  
0.30  
0.12  
18.212  
11.506  
9.957  
-
0.10  
1.00  
-
2.0  
37.4  
11.8  
4.7  
717  
453  
392  
-
3.9  
39.4  
-
c
-
-
D
18.415  
11.760  
10.160  
0.800  
0.50  
0.805  
-
725  
463  
400  
31.5  
19.7  
31.7  
-
E
E1  
e
L
0.40  
-
0.60  
-
15.7  
-
23.6  
-
ZD  
y
-
0.076  
6o  
-
3
0o  
3o  
0o  
3o  
6o  
Θ
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
8
®
LY615128  
5V 512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
ORDERING INFORMATION  
LY615128 U V - WW Y Z  
Z : Packing Type  
Blank : Tube or Tray  
T : Tape Reel  
Y : Temperature Range  
Blank : (Commercial) 0°C ~ 70°C  
WW : Access Time(Speed)  
V : Lead Information  
L : Green Package  
U : Package Type  
M : 44-pin 400 mil TSOP-II  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
9
®
LY615128  
5V 512K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
THIS PAGE IS LEFT BLANK INTENTIONALLY.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
10  
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