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IXGH48N60C3C1

型号：

IXGH48N60C3C1

描述：

GenX3TM 600V IGBT W /碳化硅反并联二极管[ GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

184 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT  
w/ SiC Anti-Parallel  
Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 48A  
≤ 2.5V  
= 38ns  
IXGH48N60C3C1  
High Speed PT IGBT for  
40 - 100kHz Switching  
TO-247  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
VGES  
VGEM  
IC25  
IC110  
IF110  
ICM  
Continuous  
±20  
±30  
75  
V
V
E
( TAB )  
Transient  
G = Gate  
E = Emitter  
C
= Collector  
TC = 25°C (Limited by Leads)  
TC = 110°C  
A
TAB = Collector  
48  
A
TC = 110°C  
20  
A
TC = 25°C, 1ms  
TC = 25°C  
250  
30  
A
Features  
IA  
A
z Optimized for Low Switching Losses  
z Square RBSOA  
EAS  
TC = 25°C  
300  
mJ  
SSOA  
(RBSOA)  
PC  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped Inductive Load  
TC = 25°C  
ICM = 100  
@ < VCES  
300  
A
z Anti-Parallel Schottky Diode  
z Fast Switching  
z Avalanche Rated  
z International Standard Package  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Advantages  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
z High Power Density  
z Low Gate Drive Requirement  
TSOLD  
FC  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
Weight  
Applications  
z High Frequency Power Inverters  
z UPS  
z Motor Drives  
Symbol  
Test Conditions  
Characteristic Values  
z SMPS  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.5  
V
VCE = VCES, VGE = 0V  
50 μA  
1.75 mA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
TJ = 125°C  
2.3  
1.8  
2.5  
V
V
DS100139A(06/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH48N60C3C1  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
20  
30  
2120  
420  
50  
S
pF  
pF  
pF  
Cies  
Coes  
Cres  
∅ P  
Qg  
77  
16  
32  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
19  
25  
ns  
ns  
e
Inductive Load, TJ = 25°C  
IC = 30A, VGE = 15V  
VCE = 400V, RG = 3Ω  
Note 2  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Eon  
td(off)  
tfi  
0.33  
60  
mJ  
ns  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
100  
38  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
0.23  
0.42  
mJ  
td(on)  
tri  
19  
28  
ns  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Inductive Load, TJ = 125°C  
IC = 30A, VGE = 15V  
VCE = 400V, RG = 3Ω  
Note 2  
20.80 21.46  
15.75 16.26  
Eon  
td(off)  
tfi  
0.37  
92  
mJ  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
95  
ns  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eoff  
0.57  
mJ  
R
4.32  
5.49 .170 .216  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
0.21  
Reverse Diode (SiC)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
1.65  
1.80  
Max.  
VF  
IF = 20A, VGE = 0V, Note 1  
2.10  
V
V
TJ = 125°C  
RthJC  
0.90 °C/W  
Notes  
1. Pulse test, t ≤ 300μs, duty c ycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH48N60C3C1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
VGE = 15V  
11V  
13V  
9V  
11V  
9V  
7V  
7V  
6
0
0
2
4
8
10  
12  
14  
16  
18  
20  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
2.8  
15  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
60  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGE = 15V  
13V  
VGE = 15V  
50  
40  
30  
20  
10  
0
11V  
I C = 60A  
9V  
I C = 30A  
7V  
I C = 15A  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
I C = 60A  
30A  
TJ = 125ºC  
15A  
25ºC  
- 40ºC  
7
8
9
10  
11  
VGE - Volts  
12  
13  
14  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
10.0  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH48N60C3C1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 30A  
I G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
G = 3Ω  
dV / dt < 10V / ns  
R
C
res  
10  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.  
IXYS REF: G_48N60C3C1(5D)6-04-09  
IXGH48N60C3C1  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
E
E
on - - - -  
E
E
on - - - -  
off  
RG = 3  
off  
VGE = 15V  
ꢀ ,  
VCE = 400V  
TJ = 125ºC , VGE = 15V  
VCE = 400V  
I C = 60A  
TJ = 125ºC  
TJ = 25ºC  
I C = 30A  
0
5
10  
15  
RG - Ohms  
20  
25  
30  
35  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
2.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
140  
130  
120  
110  
100  
90  
350  
300  
250  
200  
150  
100  
50  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
E
E
t f i  
td(off)  
- - - -  
on - - - -  
off  
TJ = 125ºC, GE = 15V  
V
RG = 3ꢀ VGE = 15V  
,
VCE = 400V  
VCE = 400V  
I C = 60A  
I C = 60A  
I C = 30A  
I C = 30A  
80  
0
5
10  
15  
20  
25  
30  
35  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
160  
120  
160  
140  
120  
100  
80  
120  
110  
100  
90  
t f i  
td(off)  
- - - -  
tf i  
td(off)  
- - - -  
140  
120  
100  
80  
110  
100  
90  
RG = 3ꢀ ,  
V
= 15V  
GE  
RG = 3Ω , VGE = 15V  
VCE = 400V  
VCE = 400V  
I C = 60A  
TJ = 125ºC  
80  
80  
I C = 30A  
60  
70  
60  
70  
40  
60  
40  
60  
TJ = 25ºC  
35  
20  
50  
20  
50  
15  
20  
25  
30  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH48N60C3C1  
Fig. 18. Inductive Turn-on  
Fig. 19. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Switching Times vs. Collector Current  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
120  
100  
80  
60  
40  
20  
0
27  
25  
23  
21  
19  
17  
15  
tr i  
td(on) - - - -  
tr i  
td(on) - - - -  
TJ = 125ºC, VGE = 15V  
VCE = 400V  
RG = 3ꢀ , VGE = 15V  
VCE = 400V  
T
= 25ºC, 125ºC  
J
I C = 60A  
60  
40  
I C = 30A  
20  
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
5
10  
15  
20  
25  
30  
35  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
Fig. 21. Forward Current vs. Forward Voltage  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
26  
50  
40  
30  
20  
10  
0
t r i  
td(on) - - - -  
25  
24  
23  
22  
21  
20  
19  
18  
17  
RG = 3Ω , VGE = 15V  
VCE = 400V  
T
= 25ºC  
J
T
= 125ºC  
J
I C = 60A  
I C = 30A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0.0  
0.4  
0.8  
1.2  
1.6  
VF - Volts  
2.0  
2.4  
2.8  
3.2  
TJ - Degrees Centigrade  
Fig. 22. Maximum Transient Thermal Impedance for Diode  
1.00  
0.10  
0.01  
0.00  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.  
IXYS REF: G_48N60C3C1(5D)6-04-09  
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