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IXGA30N60C3C1

型号：

IXGA30N60C3C1

描述：

GenX3TM 600V IGBT W /碳化硅反并联二极管[ GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

281 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT  
w/ SiC Anti-Parallel  
Diode  
VCES = 600V  
IC110 = 30A  
VCE(sat) ≤ 3.0V  
tfi(typ) = 47ns  
IXGA30N60C3C1  
IXGP30N60C3C1  
IXGH30N60C3C1  
High Speed PT IGBTs for  
40 - 100kHz Switching  
TO-263(IXGA)  
G
E
C (TAB)  
Symbol Test Conditions  
Maximum Ratings  
TO-220(IXGP)  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C (TAB)  
C
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
60  
30  
13  
A
A
A
A
E
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
TO-247(IXGH)  
150  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 60  
A
(RBSOA)  
Clamped Inductive Load  
@ ≤ VCES  
PC  
TC = 25°C  
220  
W
G
C
E
C (TAB)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
E = Emitter  
C
= Collector  
TAB = Collector  
-55 ... +150  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Features  
TSOLD  
ꢀOptimized for Low Switching Losses  
ꢀSquareRBSOA  
ꢀAnti-Parallel Schottky Diode  
ꢀInternational Standard Packages  
Md  
Mounting Torque (TO-220 & TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
ꢀHigh Power Density  
ꢀLow Gate Drive Requirement  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.5  
5.5  
V
Applications  
VCE = VCES, VGE = 0V  
25 μA  
300 μA  
ꢀHigh Frequency Power Inverters  
ꢀUPS  
TJ = 125°C  
TJ = 125°C  
ꢀMotorDrives  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
ꢀSMPS  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
2.6  
1.8  
3.0  
V
V
ꢀPFCCircuits  
ꢀBatteryChargers  
ꢀWeldingMachines  
ꢀLampBallasts  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100142A(06/09)  
IXGA30N60C3C1 IXGP30N60C3C1  
IXGH30N60C3C1  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
g
IC = 20A, VCE = 10V, Note 1  
9
16  
S
fs  
C
1075  
196  
29  
pF  
pF  
pF  
ies  
Coes  
Cres  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
38  
8
nC  
nC  
nC  
Qge  
Qgc  
IC = 20A, VGE = 15V, VCE = 0.5 • VCES  
17  
td(on)  
tri  
17  
20  
ns  
ns  
Inductive Load, TJ = 25°C  
IC = 20A, VGE = 15V  
VCE = 300V, RG = 5Ω  
Note2  
Eon  
td(off)  
0.12  
42  
mJ  
ns  
75  
t
47  
ns  
fi  
Eoff  
0.09 0.18  
mJ  
td(on)  
tri  
16  
21  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = 20A, VGE = 15V  
VCE = 300V, RG = 5Ω  
Note2  
Eon  
td(off)  
0.16  
70  
mJ  
ns  
t
90  
ns  
fi  
Eoff  
0.33  
mJ  
RthJC  
RthCS  
0.56 °C/W  
TO-220  
TO-247  
0.50  
0.21  
°C/W  
°C/W  
Reverse Diode (SiC)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 10A, VGE = 0V, Note 1  
1.65  
1.80  
2.10  
V
V
TJ = 125°C  
RthJC  
1.10 °C/W  
Notes  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405 B2 6,759,692  
6,710,463  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
by one or more of the following U.S. patents: 4,850,072  
4,881,106  
6,259,123 B1  
6,306,728 B1  
6,771,478 B2 7,071,537  
IXGA30N60C3C1 IXGP30N60C3C1  
IXGH30N60C3C1  
TO-263 (IXGA) Outline  
TO-220 (IXGP) Outline  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
TO-247 (IXTH) Outline  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
∅P  
1
2
3
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
e
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
Terminals: 1 - Gate  
2 - Drain  
R
4.32  
5.49 .170 .216  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGA30N60C3C1 IXGP30N60C3C1  
IXGH30N60C3C1  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
Fig. 1. Output Characteristics  
@ 25ºC  
180  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 15V  
13V  
VGE = 15V  
160  
140  
120  
100  
80  
11V  
13V  
11V  
9V  
60  
9V  
7V  
40  
7V  
20  
0
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
3.2  
15  
0
25  
5
2
4
6
8
10  
12  
14  
16  
18  
20  
150  
11  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 15V  
13V  
VGE = 15V  
11V  
I C = 40A  
9V  
I C = 20A  
I C = 10A  
7V  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
TJ = 25ºC  
I C = 40A  
TJ = 125ºC  
25ºC  
- 40ºC  
20A  
10A  
7
8
9
10  
11  
VGE - Volts  
12  
13  
14  
6
7
8
9
10  
VGE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXGA30N60C3C1 IXGP30N60C3C1  
IXGH30N60C3C1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
24  
20  
16  
12  
8
16  
TJ = - 40ºC  
VCE = 300V  
I C = 20A  
14  
12  
10  
8
25ºC  
I G = 10 mA  
125ºC  
6
4
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
5
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 5Ω  
dV / dt < 10V / ns  
C
res  
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance for IGBT  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_30N60C3C1(4D)6-03-09  
IXGA30N60C3C1 IXGP30N60C3C1  
IXGH30N60C3C1  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
0.6  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
E
E
on - - - -  
E
E
on - - - -  
off  
off  
RG = 5  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
TJ = 125ºC , VGE = 15V  
CE = 300V  
VGE = 15V  
ꢀ ,  
CE = 300V  
V
V
I C = 40A  
TJ = 125ºC  
TJ = 25ºC  
I C = 20A  
10  
15  
20  
25  
30  
35  
40  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
140  
130  
120  
110  
100  
90  
E
E
on - - - -  
t f i  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
off  
RG = 5ꢀ VGE = 15V  
,
VCE = 300V  
V
CE = 300V  
I C = 40A  
I C = 40A  
80  
70  
I C = 20A  
I C = 20A  
60  
50  
80  
40  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
180  
160  
140  
120  
100  
80  
110  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
t f i  
t
d(off) - - - -  
tf i  
t
100  
90  
80  
70  
60  
50  
40  
30  
20  
d(off) - - - -  
RG = 5ꢀ , VGE = 15V  
RG = 5Ω , VGE = 15V  
VCE = 300V  
VCE = 300V  
TJ = 125ºC  
I
= 40A, 20A  
C
60  
60  
40  
TJ = 25ºC  
40  
20  
0
20  
10  
15  
20  
25  
30  
35  
40  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXGA30N60C3C1 IXGP30N60C3C1  
IXGH30N60C3C1  
Fig. 18. Inductive Turn-on  
Fig. 19. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Switching Times vs. Collector Current  
90  
80  
70  
60  
50  
40  
30  
20  
10  
30  
28  
26  
24  
22  
20  
18  
16  
14  
60  
50  
40  
30  
20  
10  
0
24  
t r i  
t
t r i  
td(on)  
- - - -  
RG = 5Ω , VGE = 15V  
d(on) - - - -  
22  
20  
18  
16  
14  
12  
TJ = 125ºC, VGE = 15V  
VCE = 300V  
VCE = 300V  
I C = 40A  
TJ = 125ºC  
TJ = 25ºC  
I C = 20A  
4
6
8
10  
12  
14  
16  
18  
20  
10  
15  
20  
25  
IC - Amperes  
30  
35  
40  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
Fig. 21. Forward Current vs. Forward Voltage  
75  
65  
55  
45  
35  
25  
15  
21  
20  
19  
18  
17  
16  
15  
20  
16  
12  
8
t r i  
t
d(on) - - - -  
RG = 5Ω , VGE = 15V  
T
= 25ºC  
VCE = 300V  
J
I C = 40A  
T
= 125ºC  
J
I C = 20A  
4
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0.0  
0.4  
0.8  
1.2  
1.6  
VF - Volts  
2.0  
2.4  
2.8  
3.2  
TJ - Degrees Centigrade  
Fig. 22. Maximum Transient Thermal Impedance for Diode  
10.000  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_30N60C3C1(4D)6-03-09  
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