IXFN260N17T
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
105
170
S
Ciss
Coss
Crss
24
2870
450
nF
pF
pF
td(on)
tr
td(off)
tf
54
40
90
40
ns
ns
ns
ns
Resistive Switching Times
V
GS = 15V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
Qg(on)
Qgs
400
108
116
nC
nC
nC
(M4 screws (4x) supplied)
VGS = 10V, VDS = 0.5 • VDSS, ID = 130A
Qgd
RthJC
RthCS
0.138 °C/W
°C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
IS
VGS = 0V
260
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 60A, VGS = 0V, Note 1
IF = 130A, VGS = 0V
1040
1.3
trr
QRM
200 ns
0.56
9.00
μC
-di/dt = 100A/μs
VR = 75V
IRM
A
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
