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IXGH48N60B3C1

型号：

IXGH48N60B3C1

描述：

GenX3TM 600V IGBT W /碳化硅反并联二极管[ GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

186 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT  
w/ SiC Anti-Parallel  
Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 48A  
≤ 1.8V  
= 116ns  
IXGH48N60B3C1  
Medium Speed Low Vsat PT  
IGBT 5 - 40 kHz Switching  
TO-247  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
G
C
TJ = 25°C to 150°C, RGE = 1MΩ  
( TAB )  
E
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G = Gate  
E = Emitter  
C
= Collector  
IC25  
IC110  
TC = 25°C (Limited by Leads)  
TC = 110°C  
75  
48  
A
A
TAB = Collector  
IF110  
ICM  
TC = 110°C  
20  
A
A
TC = 25°C, 1ms  
280  
SSOA  
V
GE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 120  
A
Features  
(RBSOA)  
Clamped Inductive Load  
@ ≤ VCES  
z Optimized for Low Conduction and  
Switching Losses  
PC  
TC = 25°C  
300  
W
z Square RBSOA  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Anti-Parallel Schottky Diode  
z International Standard Package  
TJM  
Tstg  
-55 ... +150  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
TSOLD  
z High Power Density  
z Low Gate Drive Requirement  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Applications  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
z Power Inverters  
z UPS  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
z Motor Drives  
z SMPS  
5.0  
V
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
ICES  
VCE = VCES, VGE = 0V  
50 μA  
1.75 mA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 32A, VGE = 15V, Note 1  
1.8  
V
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100140A(06/09)  
IXGH48N60B3C1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXGH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
28  
46  
S
Cies  
Coes  
Cres  
3980  
190  
45  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
Qg  
115  
21  
nC  
nC  
nC  
Qge  
Qgc  
IC = 40A, VGE = 15V, VCE = 0.5 • VCES  
40  
e
td(on)  
tri  
22  
26  
ns  
ns  
Inductive Load, TJ = 25°C  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
IC = 30A, VGE = 15V  
Eon  
td(off)  
tfi  
0.45  
130  
116  
0.66  
mJ  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
200 ns  
200 ns  
1.20 mJ  
VCE = 480V, RG = 5Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Note 2  
Eoff  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
22  
26  
ns  
ns  
20.80 21.46  
15.75 16.26  
Inductive Load, TJ = 125°C  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Eon  
td(off)  
tfi  
IC = 30A, VGE = 15V  
0.50  
190  
157  
1.30  
mJ  
ns  
.780 .800  
.177  
VCE = 480V, RG = 5Ω  
∅P 3.55  
Q
3.65  
.140 .144  
ns  
5.89  
6.40 0.232 0.252  
Note 2  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eoff  
mJ  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
0.21  
Reverse Diode (SiC)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 20A, VGE = 0V, Note 1  
1.65  
1.80  
2.10  
V
V
TJ = 125°C  
RthJC  
0.90 °C/W  
Notes  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
6,259,123 B1  
6,306,728 B1  
IXGH48N60B3C1  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
Fig. 1. Output Characteristics  
@ 25ºC  
300  
250  
200  
150  
100  
50  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
9V  
7V  
9V  
7V  
5V  
0
0.0  
0.0  
5
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
2.8  
15  
0
2
4
6
8
10  
12  
14  
16  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
VGE = 15V  
13V  
11V  
9V  
7V  
I C = 80A  
I C = 40A  
5V  
I C = 20A  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
200  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
I C = 80A  
40A  
20A  
60  
TJ = 125ºC  
25ºC  
40  
- 40ºC  
20  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
6
7
8
9
10  
11  
12  
13  
14  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH48N60B3C1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 40A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
0
20  
40  
60  
80  
100  
120  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
140  
120  
100  
80  
C
ies  
C
oes  
60  
40  
TJ = 125ºC  
RG = 5Ω  
20  
dV / dt < 10V / ns  
C
res  
= 1 MHz  
5
f
0
10  
100  
200  
300  
400  
VCE - Volts  
500  
600  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance for IGBT  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_48N60B3C1(5D)6-03-09  
IXGH48N60B3C1  
Fig. 13. Inductive Switching  
Fig. 12. Inductive Switching  
Energy Loss vs. Collector Current  
Energy Loss vs. Gate Resistance  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6
5
4
3
2
1
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
off  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 480V  
RG = 5Ω VGE = 15V  
,
V
VCE = 480V  
I C = 60A  
TJ = 125ºC  
I C = 30A  
TJ = 25ºC  
I C = 15A  
30  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
5
10  
15  
20  
25  
35  
40  
45  
50  
IC - Amperes  
RG - Ohms  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
220  
650  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
E
E
on - - - -  
t f i  
TJ = 125ºC, VGE = 15V  
= 480V  
td(off  
off  
) - - - -  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
RG = 5Ω VGE = 15V  
,
VCE = 480V  
V
CE  
I C = 60A  
I C = 60A  
I C = 30A  
I C = 30A  
I C = 15A  
I C = 15A  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
220  
240  
tf i  
td(off)  
- - - -  
t f i  
td(off)  
- - - -  
200  
180  
160  
140  
120  
100  
80  
220  
200  
180  
160  
140  
120  
100  
RG = 5Ω , VGE = 15V  
RG = 5Ω , VGE = 15V  
VCE = 480V  
VCE = 480V  
I C = 60A, 15A  
TJ = 125ºC  
I C = 30A  
TJ = 25ºC  
I
= 60A, 15A  
C
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH48N60B3C1  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
120  
100  
80  
60  
40  
20  
0
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
80  
70  
60  
50  
40  
30  
20  
10  
0
32  
30  
28  
26  
24  
22  
20  
18  
16  
t r i  
t
d(on) - - - -  
t r i  
td(on)  
- - - -  
TJ = 125ºC, VGE = 15V  
I C = 60A  
RG = 5Ω , VGE = 15V  
CE = 480V  
VCE = 480V  
V
TJ = 25ºC, 125ºC  
I C = 30A  
I C = 15A  
5
10  
15  
20  
25  
RG - Ohms  
30  
35  
40  
45  
50  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
Fig. 21. Forward Current vs. Forward Voltage  
50  
40  
30  
20  
10  
0
65  
55  
45  
35  
25  
15  
5
30  
tr i  
t
d(on) - - - -  
28  
26  
24  
22  
20  
18  
I C = 60A  
RG = 5  
, VGE = 15V  
Ω
T
= 25ºC  
J
VCE = 480V  
T
= 125ºC  
J
I C = 30A  
I C = 15A  
35  
25  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
VF - Volts  
TJ - Degrees Centigrade  
Fig. 22. Maximum Transient Thermal Impedance for Diodes  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_48N60B3C1(5D)6-03-09  
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