请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH36N60B3C1

型号：

IXGH36N60B3C1

描述：

GenX3TM 600V IGBT W /碳化硅反并联二极管[ GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

179 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT  
w/ SiC Anti-Parallel  
Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 36A  
≤ 1.8V  
= 100ns  
IXGH36N60B3C1  
Medium Speed Low Vsat PT  
IGBT for 5 - 40kHz Switching  
TO-247  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
G
C
E
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G = Gate  
E = Emitter  
C
= Collector  
TAB = Collector  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (Limited by Leads)  
TC = 110°C  
75  
36  
A
A
A
A
TC = 110°C  
20  
Features  
TC = 25°C, 1ms  
200  
z Optimized for Low Conduction and  
Switching Losses  
SSOA  
V
GE= 15V, TVJ = 125°C, RG = 5Ω  
ICM = 80  
A
(RBSOA)  
Clamped Inductive Load  
@ ≤ VCES  
z Square RBSOA  
PC  
TC = 25°C  
250  
W
z Anti-Parallel Schottky Diode  
z International Standard Package  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Advantages  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10 seconds  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z High Power Density  
z Low Gate Drive Requirement  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Applications  
z Power Inverters  
z UPS  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z Motor Drives  
z SMPS  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VCE = VCES, VGE = 0V  
35  
μA  
TJ =125°C  
1.25 mA  
IGES  
VCE = 0V, VGE = ± 20V  
±100  
nA  
V
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
1.5  
1.8  
DS100141A(06/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH36N60B3C1  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
28  
42  
S
Cies  
Coes  
Cres  
2430  
390  
28  
pF  
pF  
pF  
∅ P  
Qg  
80  
12  
36  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
20  
26  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 30A, VGE = 15V  
VCE = 400V, RG = 5Ω  
Note 2  
Dim.  
Millimeter  
Inches  
Eon  
td(off)  
tfi  
0.39  
125  
100  
0.80  
mJ  
ns  
Min. Max.  
Min. Max.  
200  
160  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
1.50 mJ  
td(on)  
tri  
20  
27  
ns  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Inductive load, TJ = 125°C  
IC = 30A, VGE = 15V  
VCE = 400V, RG = 5Ω  
Note 2  
20.80 21.46  
15.75 16.26  
Eon  
td(off)  
tfi  
0.43  
180  
170  
1.50  
mJ  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
ns  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eoff  
mJ  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
RthJC  
RthCS  
0.50 °C/W  
°C/W  
0.21  
Reverse Diode (SiC)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 20A, VGE = 0V, Note 1  
1.65  
1.80  
2.10  
V
V
TJ = 125°C  
RthJC  
0.90 °C/W  
Notes  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH36N60B3C1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
9V  
9V  
7V  
5V  
7V  
5V  
0
0.0  
0.0  
4
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.4  
15  
0
2
4
6
8
10  
12  
14  
150  
10  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
60  
50  
40  
30  
20  
10  
0
1.40  
1.30  
1.20  
1.10  
1.00  
0.90  
0.80  
VGE = 15V  
VGE = 15V  
13V  
11V  
9V  
I C = 60A  
7V  
5V  
I C = 30A  
I C = 15A  
0.4  
0.8  
1.2  
1.6  
2.0  
-50  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
240  
200  
160  
120  
80  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 25ºC  
I C = 60A  
30A  
15A  
40  
0
3
4
5
6
7
8
9
5
6
7
8
9
10  
11  
12  
13  
14  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH36N60B3C1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
VCE = 300V  
C = 30A  
I G = 10mA  
I
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240  
IC - Amperes  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
C
ies  
C
oes  
TJ = 125ºC  
RG = 5  
Ω
dV / dt < 10V / ns  
= 1 MHz  
5
f
C
res  
10  
0
10  
15  
20  
25  
30  
35  
40  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.  
IXYS REF: G_36N60B3C1(55)6-05-09  
IXGH36N60B3C1  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
E
on - - - -  
7
6
5
4
3
2
1
0
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
4.8  
4.0  
3.2  
2.4  
1.6  
0.8  
0.0  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0.0  
E
E
E
on - - - -  
off  
RG = 5  
off  
VGE = 15V  
Ω ,  
TJ = 125ºC , VGE = 15V  
CE = 400V  
VCE = 400V  
V
I C = 60A  
TJ = 125ºC, 25ºC  
I C = 30A  
I C = 15A  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs. Gate  
Resistance  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
E
off  
E
on - - - -  
t f i  
TJ = 125ºC, VGE = 15V  
CE = 400V  
td(off)  
- - - -  
RG = 5  
VGE = 15V  
CE = 400V  
Ω ,  
V
V
I C = 60A  
I C = 15A, 30A, 60A  
I C = 30A  
I C = 15A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
350  
300  
250  
200  
150  
100  
50  
220  
200  
180  
160  
140  
120  
100  
80  
240  
220  
200  
180  
160  
140  
120  
100  
80  
230  
210  
190  
170  
150  
130  
110  
90  
tf i  
RG = 5  
t
d(off) - - - -  
, VGE = 15V  
t f i  
td(off)  
- - - -  
Ω
RG = 5  
,
VGE = 15V  
Ω
VCE = 400V  
VCE = 400V  
TJ = 125ºC  
TJ = 25ºC  
35  
I C = 30A  
I C = 60A  
I C = 15A  
0
70  
15  
20  
25  
30  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH36N60B3C1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
70  
60  
50  
40  
30  
20  
10  
0
24  
150  
135  
120  
105  
90  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
t r i  
TJ = 125ºC, VGE = 15V  
VCE = 400V  
td(on) - - - -  
t r i  
td(on - - - -  
, VGE = 15V  
)
23  
22  
21  
20  
19  
18  
17  
RG = 5  
Ω
VCE = 400V  
I C  
= 60A  
TJ = 125ºC, 25ºC  
75  
60  
I C  
= 30A  
I C = 15A  
45  
30  
15  
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110 120  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
Fig. 21. Forward Current vs. Forward Voltage  
40  
35  
30  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
0
24  
23  
22  
21  
20  
19  
18  
17  
16  
I C = 60A  
T
= 25ºC  
J
t r i  
td(on) - - - -  
, VGE = 15V  
RG = 5  
Ω
T
= 125ºC  
VCE = 400V  
J
I C = 30A  
I C = 15A  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0.0  
0.5  
1.0  
1.5  
VF - Volts  
2.0  
2.5  
3.0  
TJ - Degrees Centigrade  
Fig. 22. Maximum Transient Thermal Impedance for Diode  
1.00  
0.10  
0.01  
0.00  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.  
IXYS REF: G_36N60B3C1(55)6-05-09  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.218661s