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IXFT24N90P

型号:

IXFT24N90P

描述:

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

122 K

Preliminary Technical Information  
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 900V  
ID25 = 24A  
RDS(on) 420mΩ  
300ns  
IXFH24N90P  
IXFT24N90P  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
trr  
TO-247 (IXFH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
900  
900  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
TAB  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
24  
48  
A
A
TO-268 (IXFT)  
TC = 25°C, pulse width limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
12  
1
A
J
G
S
EAS  
TAB  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
15  
V/ns  
W
660  
G = Gate  
D
= Drain  
S = Source TAB = Drain  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
z International standard packages  
z Avalanche Rated  
z Low package inductance  
z Fast intrinsic diode  
TSOLD  
Md  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
z
Easy to mount  
Space savings  
z
z
High power density  
Applications:  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
z Switched-mode and resonant-mode  
power supplies  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
900  
3.5  
V
V
z DC-DC Converters  
6.5  
z Laser Drivers  
z AC and DC motor drives  
z Robotics and servo controls  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
25 μA  
2 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
420 mΩ  
DS100059(10/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH24N90P  
IXFT24N90P  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
10  
16  
S
RGi  
Gate input resistance  
1.1  
Ω
P  
Ciss  
Coss  
Crss  
7200  
490  
60  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
46  
40  
68  
38  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2Ω (External)  
e
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qg(on)  
Qgs  
130  
50  
nC  
nC  
nC  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
58  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
RthJC  
RthCS  
0.19 °C/W  
°C/W  
e
L
L1  
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
(TO-247)  
0.25  
.780 .800  
.177  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Source-Drain Diode  
TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
24  
A
A
V
TO-268 Outline  
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
96  
1.5  
trr  
300 ns  
IF = 12A, -di/dt = 100A/μs  
QRM  
IRM  
1.1  
μC  
VR = 100V, VGS = 0V  
11  
A
Note 1: Pulse test, t 300μs; duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFH24N90P  
IXFT24N90P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
24  
22  
20  
18  
16  
14  
12  
10  
8
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
8V  
7V  
6V  
6
4
7V  
6V  
2
0
0
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 12A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
24  
22  
20  
18  
16  
14  
12  
10  
8
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
9V  
VGS = 10V  
8V  
7V  
I D = 24A  
I D = 12A  
6
6V  
5V  
4
2
0
2
4
6
8
10 12 14 16 18 20 22 24  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 12A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
6
TJ = 25ºC  
4
2
0
-50  
-25  
0
25  
50  
75  
100  
125  
4
8
12 16 20 24 28 32 36 40 44 48  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH24N90P  
IXFT24N90P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32  
ID - Amperes  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
1.1  
35  
9.0  
1.2  
40  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 450V  
I D = 12A  
I G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
= 1MHz  
f
C
iss  
C
oss  
C
rss  
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_24N90P (85)10-23-08  
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