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IXFN230N20T

型号：

IXFN230N20T

描述：

GigaMOS功率MOSFET[ GigaMOS Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

143 K

下载PDF手册
Advance Technical Information  
GigaMOSTM  
Power MOSFET  
VDSS = 200V  
ID25 = 230A  
RDS(on) ≤ 7.5mΩ  
IXFN230N20T  
trr  
≤ 200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
miniBLOC, SOT-227  
E153432  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
200  
200  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
S
D
ID25  
TC = 25°C  
220  
A
G = Gate  
S = Source  
D = Drain  
IL(RMS)  
IDM  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
200  
630  
A
A
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
( Gate Return ) Terminal.  
IA  
TC = 25°C  
TC = 25°C  
100  
3
A
J
EAS  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
20  
V/ns  
W
Features  
1090  
ꢀInternational Standard Package  
ꢀminiBLOC, with Aluminium Nitride  
Isolation  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
ꢀIsolation voltage 2500 V~  
ꢀHigh Current Handling Capability  
ꢀFast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, RMS  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
ꢀAvalanche Rated  
IISOL ≤ 1mA  
ꢀ
Low RDS(on)  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
ꢀ
Easy to Mount  
Space Savings  
High Power Density  
ꢀ
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
200  
2.5  
Typ.  
Max.  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Synchronous Recification  
ꢀDC-DC Converters  
ꢀBattery Chargers  
5.0  
ꢀSwitched-Mode and Resonant-Mode  
Power Supplies  
ꢀDC Choppers  
ꢀAC Motor Drives  
±200 nA  
IDSS  
50 µA  
3 mA  
TJ = 150°C  
ꢀUninterruptible Power Supplies  
ꢀHigh Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
7.5 mΩ  
DS100134(03/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN230N20T  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
100  
160  
S
Ciss  
Coss  
Crss  
28  
2540  
310  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
41  
35  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
104  
29  
RG = 1Ω (External)  
Qg(on)  
Qgs  
378  
125  
86  
nC  
nC  
nC  
(M4 screws (4x) supplied)  
VGS = 10V, VDS = 0.5 • VDSS, ID = 115A  
Qgd  
RthJC  
RthCS  
0.138 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
230  
920  
1.3  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 60A, VGS = 0V, Note 1  
IF = 115A, VGS = 0V  
trr  
QRM  
200 ns  
µC  
0.74  
10.6  
-di/dt = 100A/µs  
VR = 75V  
IRM  
A
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN230N20T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
240  
220  
200  
180  
160  
140  
120  
100  
80  
VGS = 15V  
10V  
7V  
VGS = 15V  
10V  
7V  
6V  
6V  
60  
40  
5V  
5V  
20  
0
0
0.0  
0.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
4.0  
350  
0
1
2
3
4
5
6
7
8
9
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 115A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
240  
220  
200  
180  
160  
140  
120  
100  
80  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
I D = 230A  
6V  
5V  
I D = 115A  
60  
40  
20  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 115A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
220  
200  
180  
160  
140  
120  
100  
80  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 10V  
External Lead Current Limit  
TJ = 175ºC  
60  
40  
TJ = 25ºC  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
50  
100  
150  
200  
250  
300  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN230N20T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
280  
240  
200  
160  
120  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
150ºC  
25ºC  
60  
- 40ºC  
40  
40  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
1.2  
35  
6.5  
1.4  
40  
0
0
1
20  
40  
60  
80  
100 120 140 160 180 200  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 100V  
I
I
D = 115A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
40  
80  
120 160 200 240 280 320 360 400  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1,000  
100  
10  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
RDS(on) Limit  
25µs  
C
iss  
C
C
oss  
100µs  
TJ = 175ºC  
TC = 25ºC  
Single Pulse  
1ms  
rss  
0
5
10  
15  
20  
25  
30  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_230N20T (9E)03-25-09  
IXFN230N20T  
Fig. 13. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_230N20T (9E)03-25-09  
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