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IXFN180N25T

型号：

IXFN180N25T

描述：

GigaMOS功率MOSFET[ GigaMOS Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

142 K

下载PDF手册
Advance Technical Information  
GigaMOSTM  
Power MOSFET  
VDSS = 250V  
ID25 = 155A  
RDS(on) ≤ 12.9mΩ  
IXFN180N25T  
trr  
≤ 200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
miniBLOC, SOT-227  
E153432  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
250  
250  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
S
D
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
164  
500  
A
A
G = Gate  
S = Source  
D = Drain  
IA  
TC = 25°C  
TC = 25°C  
40  
3
A
J
EAS  
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
( Gate Return ) Terminal.  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
900  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z International Standard Package  
z miniBLOC, with Aluminium Nitride  
Isolation  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Isolation voltage 2500 V~  
z High Current Handling Capability  
z Fast Intrinsic Diode  
VISOL  
50/60 Hz, RMS  
IISOL ≤ 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z Avalanche Rated  
z
Low RDS(on)  
Weight  
30  
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
250  
2.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z DC-DC Converters  
z Battery Chargers  
5.0  
±200 nA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
IDSS  
50 µA  
3 mA  
z DC Choppers  
z AC Motor Drives  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
12.9 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
DS100130(03/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN180N25T  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
100  
160  
S
Ciss  
Coss  
Crss  
28  
2050  
158  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
37  
33  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 90A  
100  
28  
RG = 1Ω (External)  
Qg(on)  
Qgs  
345  
122  
70  
nC  
nC  
nC  
(M4 screws (4x) supplied)  
VGS = 10V, VDS = 0.5 • VDSS, ID = 90A  
Qgd  
RthJC  
RthCS  
0.138 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
180  
720  
1.3  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 60A, VGS = 0V, Note 1  
IF = 90A, VGS = 0V  
trr  
QRM  
200 ns  
µC  
0.77  
11  
-di/dt = 100A/µs  
VR = 75V  
IRM  
A
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN180N25T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 10V  
VGS = 10V  
8V  
7V  
7V  
6V  
6V  
5V  
60  
40  
5V  
20  
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
150  
150  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 90A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
180  
160  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
7V  
VGS = 10V  
6V  
I D = 180A  
I D = 90A  
60  
5V  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 90A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
180  
VGS = 10V  
160  
140  
120  
100  
80  
TJ = 125ºC  
60  
40  
TJ = 25ºC  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN180N25T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
280  
240  
200  
160  
120  
80  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
60  
40  
40  
20  
0
0
3.4  
0.0  
0
3.8  
4.2  
4.6  
5.0  
5.4  
5.8  
6.2  
6.6  
1.4  
40  
0
0
1
20  
40  
60  
80  
100 120 140 160 180 200  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 125V  
I
I
D = 90A  
G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
50  
100  
150  
200  
250  
300  
350  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1,000  
100  
10  
= 1 MHz  
f
RDS( ) Limit  
on  
C
iss  
25µs  
C
100µs  
oss  
1ms  
TJ = 150ºC  
TC = 25ºC  
Single Pulse  
C
rss  
1
5
10  
15  
20  
25  
30  
35  
10  
100  
1000  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
VDS - Volts  
IXYS REF: F_180N25T (9E)03-23-09  
IXFN180N25T  
Fig. 13. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_180N25T (9E)03-23-09  
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