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IXFB52N90P

型号：

IXFB52N90P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

120 K

下载PDF手册
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 900V  
ID25 = 52A  
IXFB52N90P  
RDS(on) ≤ 160mΩ  
trr  
≤ 300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
PLUS264TM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
900  
V
V
V
V
VDGR  
VGSS  
VGSM  
TJ = 25°C to 150°C, RGS = 1MΩ  
Continuous  
900  
± 30  
± 40  
G
D
S
(TAB)  
Transient  
ID25  
IDM  
TC = 25°C  
52  
A
A
G = Gate  
S = Source  
D
= Drain  
TC = 25°C, Pulse Width Limited by TJM  
104  
TAB = Drain  
IA  
TC = 25°C  
TC = 25°C  
26  
2
A
J
EAS  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
1250  
V/ns  
W
Features  
TJ  
-55 ... +150  
150  
°C  
z Fast Intrinsic Diode  
z Avalanche Rated  
z Low Package Inductance  
TJM  
°C  
Tstg  
-55 ... +150  
300  
°C  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
°C  
TSOLD  
FC  
260  
°C  
Advantages  
Mounting Force  
30..120/6.7..27  
10  
N/lb.  
g
z
Plus 264TM Package for Clip or Spring  
Mounting  
Space Savings  
Weight  
z
z
High Power Density  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
900  
3.5  
Typ.  
Max.  
z Switched-Mode and Resonant-Mode  
Power Supplies  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
z DC-DC Converters  
6.5  
z Laser Drivers  
z AC and DC Motor drives  
z Robotics and Servo Controls  
± 200 nA  
50 μA  
IDSS  
TJ = 125°C  
4
mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
160 mΩ  
DS100064A(02/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFB52N90P  
Symbol  
Test Conditions  
Characteristic Values  
PLUS264TM (IXFB) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
20  
35  
S
RGi  
1.56  
Ω
Ciss  
Coss  
Crss  
19  
1180  
24  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
63  
80  
95  
42  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
308  
117  
132  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.13  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
52  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
208  
1.5  
trr  
300 ns  
IF = 26A, -di/dt = 100A/μs  
QRM  
IRM  
1.8  
26  
μC  
VR = 100V  
A
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFB52N90P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
7V  
8V  
7V  
0
0
0
0
1
2
3
4
5
6
7
8
9
20  
90  
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 26A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
9V  
VGS = 10V  
I D = 52A  
8V  
I D = 26A  
7V  
6V  
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 26A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
ID - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFB52N90P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
125ºC  
- 40ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
450  
10  
5.0  
0.3  
0
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
160  
140  
120  
100  
80  
VDS = 450V  
D = 26A  
I G = 10mA  
I
6
60  
TJ = 125ºC  
4
40  
TJ = 25ºC  
2
20  
0
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
50  
100  
150  
200  
250  
300  
350  
400  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
C
iss  
C
oss  
C
rss  
f = 1 MHz  
5
10  
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Pulse Width - Seconds  
IXYS REF: F_52N90P(97)10-24-08  
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