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IXFT21N50Q

型号：

IXFT21N50Q

描述：

HiPerFET功率MOSFET的MOSFET[ HiPerFET Power MOSFETs MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

563 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFH 21N50Q  
IXFT 21N50Q  
VDSS  
ID25  
= 500 V  
= 21 A  
RDS(on) = 0.25 Ω  
trr ≤ 250 ns  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, High dv/dt  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
500  
500  
V
V
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
(TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
21  
84  
21  
A
A
A
TO-268 (D3) ( IXFT)  
EAR  
EAS  
TC = 25°C  
30  
mJ  
mJ  
1.5  
G
(TAB)  
S
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
,
15  
V/ns  
TJ ≤ 150°C, RG = 2 Ω  
G = Gate  
D
= Drain  
PD  
TC = 25°C  
280  
W
S = Source TAB = Drain  
TJ  
TJM  
Tstg  
-55 to +150  
150  
-55 to +150  
°C  
°C  
°C  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
300  
°C  
Features  
Md  
1.13/10 Nm/lb.in.  
l IXYS advanced low Qg process  
l Low gate charge and capacitances  
- easier to drive  
Weight  
TO-247  
TO-268  
6
4
g
g
- faster switching  
l International standard packages  
l Low RDS (on)  
Symbol  
TestConditions  
Characteristic Values  
l Rated for unclamped Inductive load  
switching (UIS) rated  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
l Molding epoxies meet UL 94 V-0  
flammability classification  
VDSS  
VGS(th)  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
500  
2.5  
V
V
4.5  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
100  
nA  
Advantages  
VDS = V  
T
= 25°C  
25  
1
µA  
VGS = 0DVSS  
TJJ = 125°C  
mA  
l
Easy to mount  
Space savings  
l
RDS(on)  
V
= 10 V, ID = 0.5 ID25  
0.25  
Ω
PGuSlse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
l
High power density  
© 2004 IXYS All rights reserved  
98718B(02/04)  
IXFH 21N50Q  
IXFT 21N50Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD (IXFH) Outline  
VDS = 20 V; ID = 0.5 • ID25, pulse test  
14  
21  
S
1
2
3
Ciss  
Coss  
Crss  
3000  
420  
110  
pF  
pF  
pF  
Terminals:  
1 - Gate  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
2 - Drain  
3 - Source  
Tab - Drain  
td(on)  
tr  
td(off)  
tf  
25  
28  
51  
12  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2.0 Ω (External),  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185  
.087  
.059  
.209  
.102  
.098  
A
A12  
Qg(on)  
Qgs  
Qgd  
84  
20  
35  
nC  
nC  
nC  
b
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040  
.065  
.113  
.055  
.084  
.123  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
b
b12  
C
D
E
.4  
20.80  
15.75  
.8  
21.46  
16.26  
.016  
.819  
.610  
.031  
.845  
.640  
RthJC  
RthCK  
0.45 K/W  
K/W  
(TO-247)  
0.25  
e
5.20  
19.81  
5.72  
20.32  
4.50  
0.205  
.780  
0.225  
.800  
.177  
L
L1  
∅P  
Q
3.55  
5.89  
3.65  
6.40  
.140  
0.232  
.144  
0.252  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
R
S
4.32  
5.49  
.170  
.216  
6.15 BSC  
242 BSC  
Symbol  
IS  
TestConditions  
VGS = 0 V  
21  
84  
A
A
V
TO-268 Outline  
ISM  
Repetitive; pulse width limited by TJM  
VSD  
IF = I , VGS = 0 V,  
1.3  
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
250 ns  
QRM  
IRM  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
0.85  
8
µC  
A
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXFH 21N50Q  
IXFT 21N50Q  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
ºC  
@ 25ºC  
22  
20  
18  
16  
14  
12  
10  
8
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
V
GS  
= 10V  
8V  
7V  
8V  
7V  
6.5V  
6V  
6V  
5.5V  
6
5.5V  
5V  
5V  
4
2
4.5V  
0
0
0
1
2
3
4
5
6
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
22  
20  
18  
16  
14  
12  
10  
8
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
5.5V  
ID = 21A  
5V  
ID = 10.5A  
6
4.5V  
4
0.7  
0.4  
2
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0
2
4
6
8
10  
12  
14  
TJ - Degrees Centigrade  
VD S - Volts  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
24  
21  
18  
15  
12  
9
VGS = 10V  
TJ = 125ºC  
6
TJ = 25ºC  
3
0
0.7  
-50  
-25  
0
25  
50  
75  
100 125 150  
0
5
10 15 20 25 30 35 40 45 50 55 60  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
98718B(02/04)  
IXFH 21N50Q  
IXFT 21N50Q  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
40  
35  
30  
25  
20  
15  
10  
5
35  
30  
25  
20  
15  
10  
5
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
0
0
3.5  
0.4  
0
4
4.5  
5
5.5  
6
6.5  
1.1  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
60  
50  
40  
30  
20  
10  
0
VDS = 250V  
D = 10.5A  
G = 10mA  
I
I
TJ = 125ºC  
TJ = 25ºC  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
10000  
1000  
100  
1.00  
0.10  
0.01  
f = 1MHz  
C
iss  
C
oss  
C
rss  
10  
5
10  
15  
20  
25  
30  
35  
1
10  
100  
1000  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
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