4N39
PHOTO SCR OPTOCOUPLER
FEATURES
• Turn On Current (I ), 5.0 mA Typical
Package Dimensions in Inches (mm)
FT
• Gate Trigger Current (I ), 20 mA
• Surge Anode Current, 10 Amp
GT
Pin One ID.
2
1
3
1
2
3
6
5
4
Gate
Anode
• Blocking Voltage, 200 VAC
PK
• Gate Trigger Voltage (V ), 0.6 Volt
.248 (6.30)
.256 (6.50)
GT
Cathode
NC
Anode
Cathode
• Isolation Voltage, 5300 VAC
• Solid State Reliability
• Standard DIP Package
RMS
4
5
6
.335 (8.50)
.343 (8.70)
• Underwriters Lab File #E52744
.300 (7.62)
typ.
.039
(1.00)
min.
DESCRIPTION
The 4N39 is an optically coupled SCR with a Gal-
lium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while
maintaining a high degree of isolation between
triggering and load circuits. The 4N39 can be used
in SCR triac and solid state relay applications
where high blocking voltages and low input current
sensitivity are required.
.130 (3.30)
.150 (3.81)
4°
typ.
18° typ.
.110 (2.79)
.150 (3.81)
.020 (.051) min.
.010 (.25)
.014 (.35)
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300 (7.62)
.347 (8.82)
.100 (2.54) typ.
Characteristics (T =25°C)
A
Maximum Ratings
Sym- Min. Typ Max Unit Condition
Emitter
bol
.
.
Peak Reverse Voltage ....................................6.0 V
Peak Forward Current
Emitter
Forward Voltage
Reverse Current
Detector
V
1.2
1.5
10
V
I =20 mA
F
(100 µs, 1% Duty Cycle)............................. 1.0 A
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25°C..........................100 mW
Derate Linearly from 50°C .........................2 mW/°C
Detector
Reverse Gate Voltage .....................................6.0 V
Anode Peak Blocking Voltage .......................200 V
Peak Reverse Gate Voltage ...............................6 V
Anode Current............................................ 300 mA
Surge Anode Current (100 µs duration).......... 10 A
Surge Gate Current (5 ms duration)........... 100 mA
Power Dissipation, 25°C ambient ..............400 mW
Derate Linearly from 25°C .........................8 mW/°C
Package
F
I
µA
V =5 V
R
R
Forward Blocking
Voltage
V
200
200
V
V
R
=10 KΩ
DM
GK
T =100°C
A
I =150 µA
d
Reverse Blocking
Voltage
V
RM
On-state Voltage
Holding Current
V
1.2
V
I
=300 mA
TM
TM
I
200
µA
R
=27 KΩ
=50 V
H
GK
V
FX
Gate Trigger
Voltage
V
0.6
1.0
50
V
V
=100 V
=27 KΩ
GT
FX
R
GK
R =10 KΩ
L
Isolation Test Voltage (1 sec.) .......... 5300 VAC
Forward Leakage
Current
I
µA
R
=10 KΩ
=200 V
RMS
DM
GK
V
Isolation Resistance
RX
12
I =0,
V =500 V, T =25°C ...............................≥10
Ω
Ω
F
IO
A
11
T =100°C
A
V =500 V, T =100°C .............................≥10
IO
A
Reverse Leakage
Current
I
50
µA
R
=27 KΩ
=200 V
Total Package Dissipation ..........................450 mW
Derate Linearly from 50°C .........................9 mW/°C
Operating Temperature ................–55°C to +100°C
Storage Temperature ....................–55°C to +150°C
Soldering Temperature (10 s.).......................260°C
RM
GK
V
RX
I =0,
F
T =100°C
A
Package
Turn-0n Current
I
15
8
30
14
mA
pF
V =50 V
FX
GK
FT
R
=10 KΩ
V
=100 V
=27 KΩ
FX
R
GK
Isolation Capaci-
tance
2
f=1 MHz
5–36
