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3SK322

型号:

3SK322

描述:

硅N沟道双栅MOS FET[ Silicon N-Channel Dual Gate MOS FET ]

品牌:

HITACHI[ HITACHI SEMICONDUCTOR ]

页数:

12 页

PDF大小:

92 K

3SK322  
Silicon N-Channel Dual Gate MOS FET  
ADE-208-712A (Z)  
2nd. Edition  
Dec. 1998  
Application  
UHF / VHF RF amplifier  
Features  
·
Low noise figure.  
NF = 1.0 dB typ. at f = 200 MHz  
Capable of low voltage operation  
Provide mini mold packages; MPAK-4R(SOT-143 var.)  
·
·
Outline  
3SK322  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDS  
Ratings  
Unit  
V
Drain to source voltage  
Gate 1 to source voltage  
Gate 2 to source voltage  
Drain current  
12  
VG1S  
VG2S  
ID  
±8  
V
±8  
V
25  
mA  
mW  
°C  
°C  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
150  
150  
Tstg  
–55 to +150  
Attention: This device is very sensitive to electro static discharge.  
It is recommended to adopt appropriate cautions when handling this transistor.  
2
3SK322  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
12  
Typ  
Max  
Unit  
Test conditions  
Drain to source breakdown voltage V(BR)DSX  
V
ID = 200 µA , VG1S = –3 V,  
VG2S = –3 V  
Gate 1 to source breakdown  
voltage  
V(BR)G1SS ±8  
V(BR) G2SS ±8  
V
V
IG1 = ±10 µA, VG2S = VDS = 0  
Gate 2 to source breakdown  
voltage  
IG2 = ±10 µA, VG1S = VDS = 0  
Gate 1 cutoff current  
Gate 2 cutoff current  
Drain current  
IG1SS  
IG2SS  
IDS(on)  
±100  
±100  
10  
nA  
nA  
mA  
VG1S = ±6 V, VG2S = VDS = 0  
VG2S = ±6 V, VG1S = VDS = 0  
0.5  
VDS = 6 V, VG1S = 0.75V,  
VG2S = 3 V  
Gate 1 to source cutoff voltage  
Gate 2 to source cutoff voltage  
Forward transfer admittance  
Input capacitance  
VG1S(off)  
VG2S(off)  
|yfs|  
0
+1.0  
+1.0  
V
VDS = 10 V, VG2S = 3V,  
ID = 100 µA  
0
V
VDS = 10 V, VG1S = 3V,  
ID = 100 µA  
16  
2.4  
20  
2.9  
1.0  
mS  
pF  
VDS = 6 V, VG2S = 3V,  
ID = 10 mA, f = 1 kHz  
Ciss  
3.4  
VDS = 6 V, VG2S = 3V,  
ID = 10 mA, f = 1 MHz  
Output capacitance  
Reverse transfer capacitance  
Power gain  
Coss  
Crss  
PG  
0.8  
1.4  
pF  
pF  
dB  
0.023 0.04  
22  
25  
VDS = 6 V, VG2S = 3V,  
ID = 10 mA, f = 200 MHz  
Noise figure  
Power gain  
NF  
PG  
1.0  
15  
1.8  
dB  
dB  
12  
VDS = 6 V, VG2S = 3V,  
ID = 10 mA, f = 900 MHz  
Noise figure  
Noise figure  
NF  
NF  
3.2  
2.8  
4.5  
3.5  
dB  
dB  
VDS = 6 V, VG2S = 3V,  
ID = 10 mA, f = 60 MHz  
Note: Marking is “ZW–”  
3
3SK322  
Main Characteristics  
4
3SK322  
5
3SK322  
6
3SK322  
7
3SK322  
8
3SK322  
9
3SK322  
10  
3SK322  
S Parameter (VDS = 6 V, VG2S = 3 V, ID = 10 mA, ZO = 50 W)  
Freq.  
(MHz)  
50  
S11  
S21  
S12  
S22  
MAG.  
0.994  
0.993  
0.986  
0.980  
0.973  
0.950  
0.936  
0.924  
0.912  
0.893  
0.874  
0.859  
0.846  
0.829  
0.810  
0.802  
0.791  
0.778  
0.756  
0.751  
ANG.  
–5.8  
MAG.  
2.04  
2.02  
2.00  
1.98  
1.94  
1.90  
1.86  
1.83  
1.77  
1.71  
1.67  
1.64  
1.58  
1.50  
1.46  
1.44  
1.38  
1.34  
1.30  
1.26  
ANG.  
173.6  
167.4  
161.5  
155.5  
149.6  
142.6  
137.1  
131.6  
126.8  
121.0  
115.5  
111.1  
106.7  
102.1  
97.1  
MAG.  
ANG.  
76.9  
85.7  
78.2  
73.5  
68.7  
63.9  
64.3  
64.5  
60.9  
53.5  
49.3  
49.0  
50.2  
49.3  
46.6  
43.7  
44.7  
43.6  
45.1  
40.7  
MAG.  
0.993  
0.993  
0.991  
0.990  
0.987  
0.985  
0.982  
0.979  
0.975  
0.971  
0.967  
0.964  
0.960  
0.955  
0.952  
0.948  
0.944  
0.940  
0.935  
0.932  
ANG.  
–2.2  
0.00116  
0.00132  
0.00229  
0.00313  
0.00427  
0.00473  
0.00536  
0.00561  
0.00562  
0.00640  
0.00638  
0.00647  
0.00667  
0.00694  
0.00661  
0.00618  
0.00622  
0.00615  
0.00576  
0.00562  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
700  
750  
800  
850  
900  
950  
1000  
–11.0  
–16.8  
–22.5  
–27.8  
–33.0  
–38.3  
–43.4  
–48.0  
–52.5  
–57.3  
–62.0  
–66.1  
–69.8  
–74.2  
–78.0  
–81.6  
–84.6  
–88.5  
–92.2  
–4.5  
–6.4  
–8.5  
–10.5  
–12.5  
–14.4  
–16.2  
–18.2  
–20.2  
–22.0  
–23.9  
–25.8  
–27.6  
–29.4  
–31.2  
–33.2  
–35.1  
–36.8  
–38.5  
92.7  
88.9  
84.2  
80.2  
75.9  
11  
3SK322  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
12  
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