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3SK321

型号：

3SK321

描述：

硅N沟道双栅MOS FET[ Silicon N-Channel Dual Gate MOS FET ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

10 页

PDF大小：

61 K

下载PDF手册
3SK321  
Silicon N-Channel Dual Gate MOS FET  
ADE-208-711A (Z)  
2nd. Edition  
Dec. 1998  
Application  
UHF RF amplifier  
Features  
•
Low noise figure.  
NF = 2.0 dB typ. at f = 900 MHz  
Capable of low voltage operation  
Provide mini mold packages; MPAK-4R(SOT-143 var.)  
•
•
Outline  
MPAK-4R  
3
4
2
1
1. Source  
2. Drain  
3. Gate2  
4. Gate1  
3SK321  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDS  
Ratings  
Unit  
V
Drain to source voltage  
Gate 1 to source voltage  
Gate 2 to source voltage  
Drain current  
12  
VG1S  
VG2S  
ID  
±8  
V
±8  
V
25  
mA  
mW  
°C  
°C  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
150  
150  
Tstg  
–55 to +150  
Attention: This device is very sensitive to electro static discharge.  
It is recommended to adopt appropriate cautions when handling this transistor.  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
V(BR)DSX 12  
Typ  
Max  
Unit  
Test conditions  
Drain to source breakdown  
voltage  
—
—
V
ID = 200 µA , VG1S = –3 V,  
VG2S = –3 V  
Gate 1 to source breakdown  
voltage  
V(BR)G1SS ±8  
V(BR) G2SS ±8  
—
—
—
—
V
V
IG1 = ±10 µA, VG2S = VDS = 0  
Gate 2 to source breakdown  
voltage  
IG2 = ±10 µA, VG1S = VDS = 0  
Gate 1 cutoff current  
Gate 2 cutoff current  
Drain current  
IG1SS  
IG2SS  
IDS(on)  
—
—
—
—
±100  
±100  
10  
nA  
nA  
mA  
VG1S = ±6 V, VG2S = VDS = 0  
VG2S = ±6 V, VG1S = VDS = 0  
VDS = 6 V, VG1S = 0.5V,  
—
0.5  
V
G2S = 3 V  
Gate 1 to source cutoff voltage VG1S(off)  
Gate 2 to source cutoff voltage VG2S(off)  
–0.5  
0
—
+0.5  
+1.0  
—
V
VDS = 10 V, VG2S = 3V,  
ID = 100 µA  
—
V
VDS = 10 V, VG1S = 3V,  
ID = 100 µA  
Forward transfer admittance  
Input capacitance  
|yfs|  
16  
20.8  
1.5  
mS  
pF  
VDS = 6 V, VG2S = 3V,  
ID = 10 mA, f = 1 kHz  
Ciss  
Coss  
1.2  
2.2  
VDS = 6 V, VG2S = 3V,  
ID = 10 mA, f = 1 MHz  
Output capacitance  
0.6  
—
0.9  
1.2  
0.03  
—
pF  
pF  
dB  
Reverse transfer capacitance Crss  
0.01  
19.5  
Power gain  
PG  
16  
VDS = 4 V, VG2S = 3V,  
ID = 10 mA, f = 900 MHz  
Noise figure  
NF  
—
2.0  
3
dB  
Note: Marking is “ZX–”  
2
3SK321  
Main Characteristics  
900M Hz PowerGain, Noise TestCircuit  
V
V
V
D
G2  
C5  
G1  
C6  
C4  
R2  
C3  
R1  
R3  
RFC  
D
Output  
G2  
G1  
L4  
L3  
Input  
S
L1  
L2  
C1  
C2  
： Variable Capacitor（10pF M AX)  
： DiskCapacitor（1000pF)  
： AirCapacitor（1000pF)  
： 47 kΩ  
C1, C2  
C3  
C4～C6  
R1  
： 47 kΩ  
R2  
： 4.7 kΩ  
R3  
L2：  
L1：  
10  
26  
（φ1m m Copperwire）  
Unit：m m  
21  
L4：  
18  
L3：  
29  
RFC：φ1m m Copperwire with enam el4turnsinside dia 6m m  
3
3SK321  
Maximum Channel Power  
Dissipation Curve  
Typical Output Characteristics  
20  
16  
12  
8
200  
150  
100  
50  
Pulse test  
V
= 3 V  
G2S  
1.2 V  
1.0 V  
0.8 V  
0.6 V  
4
V
G1S  
= 0.4 V  
0
2
4
6
8
10  
0
50  
100  
150  
200  
Drain to source voltage V  
(V)  
DS  
Ambient Temperature Ta (°C)  
Drain Current vs. Gate2 to Source Voltage  
Drain Current vs. Gate1 to Source Voltage  
20  
16  
12  
8
20  
16  
12  
8
2.0 V  
V
= 6 V  
3.0 V  
2.5 V  
V
= 6 V  
DS  
DS  
1.5 V  
2.0 V  
1.5 V  
Pulse test  
Pulse test  
1.0 V  
1.0 V  
V
G1S  
= 0.5 V  
4
4
V
= 0.5 V  
3
G2S  
0
0
1
2
3
4
5
1
2
4
5
Gate2 to source voltage V  
(V)  
Gate1 to source voltage V  
(V)  
G2S  
G1S  
4
3SK321  
Forward Transfer Admittance vs.  
Gate1 to Source Voltage  
Power Gain vs. Drain Current  
30  
24  
18  
12  
6
25  
20  
15  
10  
V
= 6 V  
DS  
f = 1 kHz  
V
= 3.0 V  
2.0 V  
G2S  
2.5 V  
1.5 V  
1.0 V  
V
= 4 V  
DS  
5
0
V
G2S  
= 3 V  
0.5 V  
0.8  
Gate1 to source voltage V  
f = 900 MHz  
0
2.0  
(V)  
0.4  
1.2  
1.6  
20  
1
2
5
10  
G1S  
Drain current  
I
(mA)  
D
Power Gain vs. Drain to Source Voltage  
Noise Figure vs. Drain Current  
5
25  
20  
15  
10  
5
V
= 4 V  
= 3 V  
DS  
V
G2S  
4
3
2
f = 900 MHz  
V
= 3 V  
G2S  
1
0
I
= 10 mA  
D
f = 900 MHz  
0
20  
10  
1
2
5
10  
(mA)  
2
4
6 8  
Drain current  
I
Drain to source voltage  
V
DS  
(V)  
D
5
3SK321  
Noise Figure vs. Drain to Source Voltage  
5
4
3
2
1
V
= 3 V  
= 10 mA  
G2S  
I
D
f = 900 MHz  
0
10  
2
4
6 8  
Drain to source voltage  
V
DS  
(V)  
6
3SK321  
S11 Parameter vs. Frequency  
S21 Parameter vs. Frequency  
Scale: 0.5 / div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
4
150°  
.2  
5
10  
.2  
.4 .6 .8 1.0 1.5 2 3 4 5 10  
0
180°  
0°  
–10  
–5  
–4  
–.2  
–30°  
–150°  
–3  
–.4  
–2  
–60°  
–120°  
–.6  
–1.5  
–.8  
–90°  
–1  
Condition:  
V
= 4 V , V  
= 3 V  
Condition:  
V
= 4 V , V  
= 3 V  
G2S  
DS  
G2S  
DS  
I
= 10 mA , Zo = 50 Ω  
I
= 10 mA , Zo = 50 Ω  
D
D
100 to 1000 MHz (50 MHz step)  
100 to 1000 MHz (50 MHz step)  
S12 Parameter vs. Frequency  
S22 Parameter vs. Frequency  
Scale: 0.002/ div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
150°  
4
.2  
5
10  
.2  
.4 .6 .8 1.0 1.5 2 3 4 5 10  
0
180°  
0°  
–10  
–5  
–4  
–.2  
–30°  
–150°  
–3  
–.4  
–2  
–60°  
–120°  
–.6  
–1.5  
–.8  
–90°  
–1  
Condition:  
V
= 4 V , V  
= 3 V  
Condition:  
V
= 4 V , V  
= 3 V  
G2S  
DS  
G2S  
DS  
I
= 10 mA , Zo = 50 Ω  
I
= 10 mA , Zo = 50 Ω  
D
D
100 to 1000 MHz (50 MHz step)  
100 to 1000 MHz (50 MHz step)  
7
3SK321  
S Parameter (VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50 Ω)  
Freq.  
(MHz)  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
700  
750  
800  
850  
900  
950  
1000  
S11  
S21  
S12  
S22  
MAG.  
0.999  
0.998  
0.992  
0.988  
0.985  
0.976  
0.971  
0.964  
0.961  
0.951  
0.949  
0.935  
0.933  
0.923  
0.916  
0.908  
0.900  
0.890  
0.876  
ANG.  
–6.1  
MAG.  
1.98  
1.97  
1.96  
1.96  
1.94  
1.92  
1.91  
1.88  
1.87  
1.86  
1.86  
1.81  
1.78  
1.77  
1.75  
1.72  
1.70  
1.67  
1.65  
ANG.  
172.2  
168.4  
165.0  
161.0  
157.1  
153.7  
149.9  
146.8  
142.8  
139.4  
136.1  
132.9  
129.4  
125.7  
122.6  
119.1  
115.8  
112.6  
109.3  
MAG.  
ANG.  
79.2  
80.4  
79.5  
79.9  
75.2  
71.8  
70.7  
65.5  
62.7  
66.6  
63.8  
58.2  
60.6  
58.5  
56.3  
56.3  
52.9  
52.4  
51.9  
MAG.  
0.989  
0.987  
0.986  
0.984  
0.981  
0.978  
0.975  
0.972  
0.968  
0.963  
0.960  
0.956  
0.950  
0.945  
0.941  
0.936  
0.930  
0.924  
0.919  
ANG.  
–4.2  
0.00094  
0.00189  
0.00230  
0.00286  
0.00364  
0.00353  
0.00419  
0.00495  
0.00509  
0.00530  
0.00550  
0.00601  
0.00582  
0.00572  
0.00553  
0.00514  
0.00543  
0.00506  
0.00469  
–9.1  
–6.1  
–11.9  
–14.8  
–17.9  
–20.6  
–23.2  
–26.3  
–29.1  
–32.2  
–35.0  
–37.6  
–40.5  
–42.9  
–45.8  
–49.0  
–51.2  
–54.0  
–56.4  
–7.9  
–9.8  
–11.5  
–13.4  
–15.2  
–17.2  
–19.1  
–20.8  
–22.8  
–24.5  
–26.3  
–28.0  
–29.9  
–31.7  
–33.4  
–35.2  
–37.0  
8
3SK321  
Package Dimensions  
Unit: mm  
±0.2  
±0.2  
2.95  
1.9  
0.95 0.95  
+ 0.1  
– 0.06  
0.16  
+ 0.1  
– 0.05  
+ 0.1  
0.4  
0.4  
– 0.05  
4
1
3
0 ~ 0.1  
2
+ 0.1  
+ 0.1  
– 0.05  
0.6  
0.4  
– 0.05  
0.85  
1.8  
0.95  
MPAK–4R  
Hitachi Code  
EIAJ  
—
—
JEDEC  
9
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  
厂商 型号 描述 页数 下载

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