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3SK319

型号：

3SK319

描述：

硅N沟道双栅MOS FET超高频射频放大器[ Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

9 页

PDF大小：

52 K

下载PDF手册
3SK319  
Silicon N-Channel Dual Gate MOS FET  
UHF RF Amplifier  
ADE-208-602(Z)  
1st. Edition  
February 1998  
Features  
•
Low noise characteristics;  
(NF= 1.4 dB typ. at f= 900 MHz)  
•
•
Excellent cross modulation characteristics  
Capable low voltage operation; +B= 5V  
Outline  
MPAK-4  
2
3
1
4
1. Source  
2. Gate1  
3. Gate2  
4. Drain  
Note: Marking is “YB–”.  
3SK319  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDS  
Ratings  
Unit  
V
Drain to source voltage  
Gate1 to source voltage  
Gate2 to source voltage  
Drain current  
6
VG1S  
VG2S  
ID  
±6  
V
±6  
V
20  
mA  
mW  
°C  
°C  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
150  
150  
Tstg  
–55 to +150  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
V(BR)DSS  
Typ  
Max Unit Test Conditions  
Drain to source breakdown  
voltage  
6
—
—
—
—
V
V
V
ID = 200µA, VG1S = VG2S = 0  
IG1 = ±10µA, VG2S = VDS = 0  
IG2 = ±10µA, VG1S = VDS = 0  
Gate1 to source breakdown  
voltage  
V(BR)G1SS ±6  
V(BR)G2SS ±6  
—
—
Gate2 to source breakdown  
voltage  
Gate1 to source cutoff current  
Gate2 to source cutoff current  
Gate1 to source cutoff voltage  
Gate2 to source cutoff voltage  
Drain current  
IG1SS  
—
—
—
0.7  
0.7  
4
±100 nA  
±100 nA  
VG1S = ±5V, VG2S = VDS = 0  
IG2SS  
—
VG2S = ±5V, VG1S = VDS = 0  
VG1S(off)  
VG2S(off)  
IDS(op)  
|yfs|  
0.5  
0.5  
0.5  
18  
1.0  
1.0  
10  
V
VDS = 5V, VG2S = 3V, ID = 100µA  
VDS = 5V, VG1S = 3V, ID = 100µA  
VDS = 3.5V, VG1S = 1.1V, VG2S = 3V  
V
mA  
mS  
Forward transfer admittance  
24  
32  
VDS = 3.5V, VG2S = 3V  
ID = 10mA , f=1kHz  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Power gain  
Ciss  
Coss  
Crss  
PG  
NF  
1.3  
0.9  
—
1.6  
1.2  
1.9  
1.5  
pF  
pF  
VDS = 3.5V, VG2S = 3V  
ID = 10mA , f= 1MHz  
0.019 0.03 pF  
18  
—
21  
—
dB  
dB  
VDS = 3.5V, VG2S = 3V  
ID = 10mA , f=900MHz  
Noise figure  
1.4  
2.2  
2
3SK319  
Maximum Channel Power  
Dissipation Curve  
Typical Output Characteristics  
20  
16  
12  
8
200  
150  
100  
50  
VG1S = 1.7 V  
V
= 3 V  
G2S  
1.6 V  
1.5 V  
1.4 V  
1.3 V  
1.2 V  
1.1 V  
1.0 V  
0.9 V  
4
0.8 V  
0
0
50  
100  
150  
200  
2
4
6
8
10  
Drain to Source Voltage  
V
(V)  
DS  
Ambient Temperature Ta (°C)  
Drain Current vs.  
Gate2 to Source Voltage  
Drain Current vs.  
Gate1 to Source Voltage  
20  
16  
12  
8
20  
16  
12  
8
V
= 3.5 V  
V
= 3.5 V  
2.0 V  
1.8 V  
1.6 V  
DS  
DS  
2.5 V  
2.0 V  
1.4 V  
1.5 V  
1.2 V  
4
4
V
= 1.0 V  
G1S  
V
= 1.0 V  
G2S  
0
0
1
2
3
4
5
1
2
3
4
5
(V)  
Gate1 to Source Voltage  
V
G1S  
Gate2 to Source Voltage  
V
(V)  
G2S  
3
3SK319  
Forward Transfer Admittance  
vs. Gate1 Voltage  
Power Gain vs. Drain Current  
30  
24  
18  
12  
6
25  
20  
15  
10  
5
V
= 3.5 V  
VG2S = 3 V  
DS  
2.5 V  
2 V  
1.5 V  
V
V
= 3.5 V  
DS  
= 3 V  
G2S  
1 V  
f = 900 MHz  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
(V)  
5
10  
15  
20  
(mA)  
25  
Drain Current  
I
Gate1 to Source Voltage  
V
D
G1S  
Noise Figure vs. Drain Current  
Power Gain vs. Drain to Source Voltage  
5
4
3
2
1
25  
20  
15  
10  
5
V
V
= 3.5 V  
DS  
= 3 V  
G2S  
f = 900 MHz  
V
= 3 V  
= 10 mA  
G2S  
I
D
f = 900 MHz  
0
0
5
10  
15  
20  
25  
2
4
6
8
10  
Drain to Source Voltage  
V
(V)  
Drain Current  
I
(mA)  
DS  
D
4
3SK319  
Noise Figure vs. Drain to Source Voltage  
Power Gain vs. Gate2 to Source Voltage  
25  
20  
15  
10  
5
5
4
3
2
1
V
= 3.5 V  
V
= 3 V  
G2S  
DS  
f = 900MHz  
I
= 10 mA  
D
f = 900 MHz  
0
0
1
2
3
4
5
2
4
6
8
10  
(V)  
Drain to Source Voltage  
V
DS  
Gate2 to Source Voltage V  
(V)  
G2S  
Noise Figure vs. Gate2 to Source Voltage  
5
4
3
2
1
V
= 3.5 V  
DS  
f = 900MHz  
0
1
4
2
3
5
Gate2 to Source Voltage V  
(V)  
G2S  
5
3SK319  
S21 Parameter vs. Frequency  
S11 Parameter vs. Frequency  
Scale: 1 / div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
4
150°  
.2  
0
5
10  
.2  
.4 .6 .8 1  
1.5 2 3 4 5 10  
180°  
0°  
–10  
–5  
–4  
–.2  
–30°  
–150°  
–3  
–.4  
–2  
–60°  
–120°  
–.6  
–1.5  
–.8  
–1  
–90°  
Test Condition :  
Test Condition :  
V
= 3.5 V , V  
= 10mA  
= 3 V  
V
I
= 3.5 V , V  
= 10mA  
= 3 V  
G2S  
DS  
G2S  
DS  
I
D
D
50 to 1000 MHz (50 MHz step)  
50 to 1000 MHz (50 MHz step)  
S12 Parameter vs. Frequency  
S22 Parameter vs. Frequency  
Scale: 0.002 / div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
150°  
4
5
.2  
10  
.2  
.4 .6 .8 1  
1.5 2 3 4 5 10  
0
180°  
0°  
–10  
–5  
–4  
–.2  
–30°  
–150°  
–3  
–.4  
–2  
–60°  
–120°  
–.6  
–1.5  
–.8  
–1  
–90°  
Test Condition :  
Test Condition :  
V
I
= 3.5 V , V  
= 10mA  
= 3 V  
V
I
= 3.5 V , V  
= 10mA  
= 3 V  
DS  
G2S  
DS  
G2S  
D
D
50 to 1000 MHz (50 MHz step)  
50 to 1000 MHz (50 MHz step)  
6
3SK319  
Sparameter (VDS = 3.5V, VG2S = 3V, ID = 10mA, Zo = 50Ω)  
S11  
S21  
MAG  
2.41  
2.41  
2.39  
2.38  
2.37  
2.35  
2.30  
2.28  
2.26  
2.23  
2.19  
2.17  
2.14  
2.09  
2.07  
2.03  
2.00  
1.96  
1.93  
1.89  
S12  
S22  
f (MHz) MAG  
ANG  
ANG  
MAG  
ANG  
89.1  
88.5  
80.7  
76.6  
79.1  
75.4  
75.0  
78.0  
71.6  
69.5  
71.5  
70.6  
69.0  
71.4  
69.0  
68.9  
74.2  
75.5  
77.8  
82.1  
MAG  
0.999  
0.996  
0.996  
0.994  
0.991  
0.988  
0.983  
0.980  
0.976  
0.971  
0.966  
0.960  
0.955  
0.948  
0.942  
0.937  
0.930  
0.923  
0.917  
0.910  
ANG  
50  
1.000  
0.998  
0.997  
0.994  
0.994  
0.986  
0.978  
0.972  
0.969  
0.954  
0.955  
0.941  
0.932  
0.924  
0.919  
0.905  
0.896  
0.884  
0.880  
0.866  
–2.8  
176.3  
171.9  
167.6  
163.7  
159.8  
155.5  
151.4  
147.6  
143.6  
140.0  
135.9  
132.2  
128.6  
125.0  
121.5  
117.9  
114.7  
110.4  
107.1  
103.8  
0.00068  
0.00176  
0.00223  
0.00303  
0.00365  
0.00414  
0.00484  
0.00533  
0.00588  
0.00617  
0.00666  
0.00672  
0.00694  
0.00709  
0.00689  
0.00699  
0.00644  
0.00633  
0.00585  
0.00605  
–2.2  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
700  
750  
800  
850  
900  
950  
1000  
–5.8  
–4.5  
–9.1  
–6.7  
–12.2  
–15.1  
–18.5  
–21.3  
–24.1  
–27.0  
–29.7  
–32.8  
–35.7  
–38.3  
–41.3  
–44.1  
–46.9  
–49.2  
–52.4  
–54.7  
–57.7  
–8.7  
–11.0  
–13.2  
–15.3  
–17.4  
–19.6  
–21.7  
–23.7  
–25.6  
–27.8  
–29.9  
–31.8  
–33.8  
–35.8  
–37.6  
–39.8  
–41.9  
7
3SK319  
Package Dimensions  
Unit: mm  
+ 0.3  
– 0.1  
2.8  
1.9  
0.95 0.95  
+ 0.1  
– 0.06  
0.16  
+ 0.1  
– 0.05  
+ 0.1  
0.4  
0.4  
– 0.05  
3
4
2
0 ~ 0.1  
1
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.4  
0.6  
0.95  
1.8  
0.85  
MPAK–4  
SC–61AA  
—
Hitachi Code  
EIAJ  
JEDEC  
8
3SK319  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Straße 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.  
9
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