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3SK317

型号：

3SK317

描述：

硅N沟道双栅MOS FET的UHF / VHF射频放大器[ Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

8 页

PDF大小：

40 K

下载PDF手册
3SK317  
Silicon N-Channel Dual Gate MOS FET  
UHF / VHF RF Amplifier  
ADE-208-778 (Z)  
1st. Edition  
Mar. 1999  
Features  
•
•
Low noise characteristics;  
(NF = 1.0 dB typ. at f = 200 MHz)  
High power gain characteristics ;  
(PG = 27.6 dB typ. at f = 200 MHz)  
Outline  
CMPAK-4  
2
3
1
4
1. Source  
2. Gate1  
3. Gate2  
4. Drain  
Note: Marking is “ZR-”.  
3SK317  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDS  
Ratings  
Unit  
V
Drain to source voltage  
Gate1 to source voltage  
Gate2 to source voltage  
Drain current  
14  
VG1S  
VG2S  
ID  
±8  
V
±8  
V
25  
mA  
mW  
°C  
°C  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
100  
150  
Tstg  
–55 to +150  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown voltage V(BR)DSS 14  
—
—
V
ID = 200 µA  
V
G1S = VG2S = -3 V  
IG1 = ±10 µA  
G2S = VDS = 0  
IG2 = ±10 µA  
G1S = VDS = 0  
VG1S = ±6 V  
G2S = VDS = 0  
VG2S = ±6 V  
G1S = VDS = 0  
Gate1 to source breakdown  
voltage  
V(BR)G1SS ±8  
V(BR)G2SS ±8  
—
—
—
—
0.2  
0.3  
8
—
V
V
Gate2 to source breakdown  
voltage  
—
V
V
Gate1 to source cutoff current  
Gate2 to source cutoff current  
Gate1 to source cutoff voltage  
Gate2 to source cutoff voltage  
Drain current  
IG1SS  
—
—
0
±100  
±100  
1
nA  
nA  
V
V
IG2SS  
V
VG1S(off)  
VG2S(off)  
IDS(op)  
|yfs|  
VDS = 10 V, VG2S = 3 V  
ID = 100 µA  
0
1
V
VDS = 10 V, VG1S = 3 V  
ID = 100 µA  
4
14  
—
mA  
mS  
VDS = 6 V, VG1S = 0.75 V  
VG2S = 3 V  
Forward transfer admittance  
20  
25  
VDS = 6 V, VG2S = 3 V  
ID = 10 mA , f = 1 kHz  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Power gain  
Ciss  
Coss  
Crss  
PG  
NF  
PG  
NF  
NF  
2.4  
0.8  
—
3.1  
1.1  
3.5  
1.4  
pF  
pF  
pF  
dB  
dB  
dB  
dB  
dB  
VDS = 6 V, VG2S = 3 V  
ID = 10 mA , f = 1 MHz  
0.021 0.04  
24  
—
27.6  
1.0  
15.6  
3
—
1.5  
—
4
VDS = 6 V, VG2S = 3 V  
Noise figure  
ID = 10 mA , f = 200 MHz  
VDS = 6 V, VG2S = 3 V  
Power gain  
12  
—
Noise figure  
ID = 10 mA , f = 900 MHz  
Noise figure  
—
2.7  
3.5  
VDS = 6 V, VG2S = 3 V  
ID = 10 mA , f = 60 MHz  
2
3SK317  
Maximum Channel Power  
Dissipation Curve  
Typical Output Characteristics  
1.2 V  
20  
16  
12  
8
200  
150  
100  
50  
V
= 3 V  
G2S  
Pulse test  
1.0 V  
0.8 V  
0.6 V  
4
V
= 0.4 V  
G1S  
0
50  
100  
150  
200  
2
4
6
8
10  
0
Drain to source voltage V  
(V)  
Ambient Temperature Ta (°C)  
DS  
Drain Current vs. Gate1 to Source Voltage  
20  
Drain Current vs. Gate2 to Source Voltage  
20  
3.0 V  
3.0 V  
2.5 V  
V
= 6 V  
V
= 6 V  
DS  
2.5 V  
DS  
Pulse test  
2.0 V  
Pulse test  
2.0 V  
16  
12  
8
16  
12  
8
1.5 V  
1.0 V  
1.5 V  
1.0 V  
4
4
V
= 0.5 V  
3
G1S  
V
G2S  
= 0.5 V  
0
0
1
2
4
5
1
2
3
4
5
Gate1 to source voltage  
V
G1S  
(V)  
Gate2 to source voltage  
V
(V)  
G2S  
3
3SK317  
Forward Transfer Admittance vs.  
Gate1 to Source Voltage  
Power Gain vs. Drain Current  
50  
40  
30  
20  
30  
24  
18  
12  
6
V
= 6 V  
V
V
G2S  
= 6 V  
= 3V  
DS  
f = 1kHz  
DS  
3 V  
f = 200MHz  
2.5 V  
2 V  
1.5 V  
10  
0
1 V  
V
= 0.5 V  
G2S  
0
0.4  
0.8  
1.2  
1.6  
2
4
8
12  
16  
20  
Drain current I  
(mA)  
Gate1 to source voltage  
V
G1S  
(V)  
D
Noise Figure vs. Drain Current  
Power Gain vs. Drain to Source Voltage  
50  
40  
30  
20  
10  
5
4
3
2
1
V = 3V  
G2S  
V
V
G2S  
= 6 V  
= 3V  
DS  
I
= 10mA  
D
f = 200MHz  
f = 200MHz  
0
4
8
12  
16  
20  
0
2
4
6
8
10  
Drain current I (mA)  
D
Drain to source voltage V (V)  
DS  
4
3SK317  
Power Gain vs. Drain Current  
Noise Figure vs. Drain to Source Voltage  
5
4
20  
16  
12  
8
V
= 3V  
G2S  
I = 10mA  
D
f = 200MHz  
3
2
1
V
= 6V  
DS  
V
= 3V  
G2S  
4
f = 900MHz  
0
4
8
12  
16 20  
0
2
4
6
8
10  
Drain to source voltage V  
(V)  
Drain current I (mA)  
DS  
D
Noise Figure vs. Drain Current  
Power Gain vs. Drain to Source Voltage  
5
4
3
2
20  
16  
12  
8
V
= 3V  
G2S  
V
= 6V  
= 3V  
DS  
1
0
4
I = 10mA  
D
V
G2S  
f = 900MHz  
f = 900MHz  
0
2
4
6
8 10  
4
8
12  
I
16  
20  
Drain current  
(mA)  
Drain to source voltage  
V
(V)  
D
DS  
5
3SK317  
Noise Figure vs. Drain Current  
Noise Figure vs. Drain to Source Voltage  
10  
8
5
4
3
2
1
V
= 3V  
V
V
= 6V  
= 3V  
G2S  
DS  
I = 10mA  
D
G2S  
f = 900MHz  
f = 60MHz  
6
4
2
0
4
8
12  
I
16  
20  
0
2
4
6
8
10  
Drain to source voltage V  
(V)  
Drain current  
(mA)  
DS  
D
Noise Figure vs. Drain to Source Voltage  
5
4
3
2
V
= 3V  
G2S  
I = 10mA  
D
f = 60MHz  
1
0
2
4
6
8
10  
(V)  
Drain to source voltage  
V
DS  
6
3SK317  
Package Dimensions  
Unit: mm  
2.0±0.2  
1.3  
0.65 0.65  
+ 0.1  
– 0.06  
0.16  
+ 0.1  
– 0.05  
+ 0.1  
0.3  
0.3  
– 0.05  
3
4
2
0 ~ 0.1  
1
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.3  
0.4  
0.65  
1.25  
0.6  
CMPAK-4  
SC-82AB  
—
Hitahi Code  
EIAJ  
JEDEC  
7
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  
厂商 型号 描述 页数 下载

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ETC

 		3SK108R 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

 		3SK108S 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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