SHANGHAI SUNRISE ELECTRONICS CO., LTD.
IN4148
SILICON EPITAXIAL PLANAR
TECHNICAL
SWITCHING DIODE
REVERSE VOLTAGE: 75V
FORWARD CURRENT: 150mA
SPECIFICATION
FEATURES
• Small glass structure ensures high reliability
DO - 35
• Fast switching
• Low leakage
1.0 (25.4)
MIN.
• High temperature soldering guaranteed:
250oC/10S/9.5mm lead length
at 5 lbs tension
.060 (1.5)
.090 (2.3)
DIA.
.120 (3.0)
.200 (5.1)
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
1.0 (25.4)
MIN.
MIL-STD 202E, method 208C
.018 (0.46)
.022 (0.56)
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
RATINGS
SYMBOL
VALUE
UNITS
VR
VRM
IO
Reverse Voltage
75
V
V
Peak Reverse Voltage
100
Forward Current (average)
Repetitive Forward Peak Current
Forward Voltage (IF=10mA)
Reverse Current (VR=20V)
Reverse Current (VR=75V)
150
mA
mA
V
IFRM
VF
300
1
25
nA
µA
A
IR1
5
Reverse Current (VR=20V,TJ=100oC)
IR2
Ct
50
Capacitance
(note 1)
(note 2)
(note 3)
4
4
pF
IF
Reverse Recovery Time
nS
oC/mW
oC
Rθ(ja)
Thermal Resistance (junction to ambient)
0.35
T
STG,TJ
Operating Junction and Storage Temperature Range
Notes:
-55 +175
1: VR=0V, f=1 MHz
2: IF=10mA to IR=1mA, VR=6V, RL=100
3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
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