SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FZT593
ISSUE 3 - NOVEMBER 1995
✪
C
COMPLEMENTARY TO FZT493
PARTMARKING DETAIL - FZT593
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-120
V
V
-100
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
Base Current
IC
-1
-200
A
IB
mA
W
°C
Power Dissipation at Tamb=25°C
Ptot
2
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL
V(BR)CBO
MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
-120
-100
-5
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-100V
VEB=-4V
V(BR)CEO
V(BR)EBO
ICBO
V
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Saturation Voltages
-100 nA
-100 nA
-100 nA
IEBO
ICES
VCES=-100V
VCE(sat)
-0.2
-0.3
V
V
IC=-250mA,IB=-25mA*
IC=-500mA IB=-50mA*
VBE(sat)
VBE(on)
hFE
-1.1
-1.0
V
V
IC=-500mA,IB=-50mA*
IC=-1mA, VCE=-5V*
Base-Emitter Turn-on Voltage
Static Forward Current Transfer
Ratio
100
100
IC=-1mA, VCE=-5V
IC=-250mA,VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
100 300
50
Transition Frequency
Output Capacitance
fT
50
MHz IC=-50mA, VCE=-10V
f=100MHz
Cobo
5
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT593 datasheet
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