HiPerFETTM
Power MOSFETs
Q-Class
VDSS ID25
RDS(on)
IXFK/IXFX 30N50Q
IXFK/IXFX 32N50Q
500 V 30 A 0.16 Ω
500 V 32 A 0.15 Ω
t ≤ 250 ns
rr
N-ChannelEnhancementMode
AvalancheRated, LowQg,Highdv/dt
Symbol
TestConditions
Maximum Ratings
PLUS247TM
(IXFK)
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
±20
±30
V
V
(TAB)
G
VGSM
D
ID25
IDM
TC = 25°C
TC = 25°C,
30N50Q
32N50Q
30N50Q
32N50Q
30
32
120
128
A
A
A
A
TO-264AA(IXFK)
pulse width limited by TJM
TC = 25°C
IAR
32
A
G
D
(TAB)
EAR
EAS
TC = 25°C
45
mJ
mJ
S
1500
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
PD
TC = 25°C
416
W
TJ
TJM
Tstg
-55 ... + 150
150
-55 ... + 150
°C
°C
°C
Features
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
l
IXYS advanced low Qg process
Md
1.13/10
Nm/lb.in.
l
Low gate charge and capacitances
- easier to drive
Weight
TO-247
TO-268
6
4
g
g
- faster switching
International standard packages
Low RDS (on)
l
l
l
Unclamped Inductive Switching (UIS)
rated
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
l
Molding epoxies meet UL 94 V-0
flammability classification
min.
typ.
max.
VDSS
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = 4 mA
500
V
V
VGS(th)
2.5
4.5
Advantages
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
l
TM
PLUS 247 package for clip or spring
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100
1
µA
mA
mounting
l
l
Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
32N50Q
30N50Q
0.15
0.16
Ω
Ω
High power density
98604D (06/02)
© 2002 IXYS All rights reserved
