IXFN 340N07
Symbol
gfs
TestConditions
Characteristic Values
miniBLOC, SOT-227 B
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
VDS = 10 V; ID = 60A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
80
98
S
Ciss
Coss
Crss
12200
pF
pF
pF
7100
3340
td(on)
tr
td(off)
tf
100
95
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 100A
M4 screws (4x) supplied
RG = 1 Ω (External)
200
33
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
Qg(on)
Qgs
490
72
nC
nC
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
VGS = 10 V, VDS = 50 V, ID = 100A
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
Qgd
266
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
RthJC
RthCK
0.18 K/W
K/W
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
0.05
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
340
1360
1.2
A
A
V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = 100A, VGS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr
QRM
IRM
IF = 50A, -di/dt = 100 A/μs, VR = 50V TJ = 25°C
100
1.4
8
200 ns
μC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508 5,049,961
5,034,796 5,063,307
5,187,117
5,237,481
5,381,025 6,162,665
6,306,728 B1 6,534,343
6,683,344
6,710,405B2
5,486,715
6,259,123B1 6,404,065B1 6,583,505
