IXFH 80N10
IXFT 80N10
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
VDS = 10 V; ID = 0.5 • ID25, pulse test
35
55
S
1
2
3
Ciss
Coss
Crss
4800
1460
490
pF
pF
pF
Terminals:
1 - Gate
VGS = 0 V, VDS = 25 V, f = 1 MHz
2 - Drain
3 - Source
Tab - Drain
td(on)
tr
td(off)
tf
41
63
90
26
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2.5 Ω (External),
Dim.
A
Millimeter
Inches
Min.
Min.
Max.
Max.
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
A
1
Qg(on)
Qgs
180
38
nC
nC
nC
A
2
b
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
b
1
b
Qgd
65
2
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
RthJC
RthCK
0.42 K/W
K/W
(TO-247)
0.25
e
5.20
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
L
19.81
L1
P3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
.216
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R
S
4.32
5.49
.170
6.15 BSC
242 BSC
Symbol
IS
TestConditions
VGS = 0 V
80
320
1.5
A
A
V
TO-268 Outline
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
200 ns
QRM
IRM
IF = 25A, -di/dt = 100 A/µs, VR = 50 V
0.5
6
µC
A
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
