Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFH 70N15
IXFT 70N15
VDSS
ID25
= 150 V
= 70 A
RDS(on) = 28 mW
trr £ 250ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
TO-247 AD (IXFH)
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
150
150
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
ID25
TC = 25°C
70
A
IDM
IAR
TC = 25°C, pulse width limited by TJM
TC = 25°C
280
70
A
A
TO-268 (IXFT) Case Style
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
1.0
G
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
(TAB)
S
PD
TC = 25°C
300
W
G = Gate
S = Source
D = Drain
TAB = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10 Nm/lb.in.
Features
Weight
TO-247AD
TO-268
6
4
g
g
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
150
2.0
V
V
4.0
±100
nA
Advantages
IDSS
TJ = 25°C
TJ = 125°C
25
750
mA
mA
V
GS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
• Easy to mount
• Space savings
• High power density
RDS(on)
28 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98583A(6/99)
1 - 2
