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IXFT58N20Q

型号:

IXFT58N20Q

描述:

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

356 K

HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFH 58N20Q  
IXFT 58N20Q  
VDSS = 200 V  
ID25 = 58 A  
RDS(on) = 40 mW  
trr £ 200 ns  
N-ChannelEnhancementMode  
AvalancheRatedHighdv/dt, LowQg  
Preliminary data sheet  
TO-268 (D3) (IXFT) Case Style  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
200  
200  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
(TAB)  
S
ID25  
IDM  
IAR  
TC = 25°C  
58  
232  
58  
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
TO-247 AD  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
1.0  
(TAB)  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
PD  
TC = 25°C  
300  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
Features  
Md  
1.13/10 Nm/lb.in.  
l IXYS advanced low Qg process  
Weight  
TO-247  
TO-268  
6
4
g
g
l International standard packages  
l Low gate charge and capacitance  
- easier to drive  
- faster switching  
l Low RDS (on)  
Symbol  
TestConditions  
Characteristic Values  
l Unclamped Inductive Switching (UIS)  
rated  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = ±20 VDC, VDS = 0  
200  
V
V
l Molding epoxies meet UL 94 V-0  
flammability classification  
2.0  
4.0  
±100  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25  
1
µA  
mA  
l
Easy to mount  
Space savings  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
40 mΩ  
l
High power density  
© 1999 IXYS All rights reserved  
98523A (5/99)  
IXFH 58N20Q  
IXFT 58N20Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
TO-247 AD Outline  
VDS = 10 V; ID = 0.5 ID25, pulse test  
24  
34  
S
Ciss  
Coss  
Crss  
3600  
870  
pF  
pF  
pF  
1
2
3
VGS = 0 V, VDS = 25 V, f = 1 MHz  
280  
td(on)  
tr  
td(off)  
tf  
20  
40  
40  
13  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
RG = 1.5 (External)  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
Qg(on)  
Qgs  
98 140  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
25  
45  
35  
70  
Qgd  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCK  
0.42  
K/W  
K/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
(TO-247)  
0.25  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
Symbol  
IS  
TestConditions  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
VGS = 0 V  
58  
232  
1.5  
A
ISM  
Repetitive;  
A
V
TO-268 Outline  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t 300 µs, duty cycle d 2 %  
trr  
200  
ns  
QRM  
IF = IS-di/dt = 100 A/µs, VR = 100 V  
0.7  
7
µC  
IRM  
A
Min.RecommendedFootprint  
Dimensions in mm and inches  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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