IXFH 32N50Q
IXFT 32N50Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
VDS = 10 V; ID = 0.5 • ID25, Note 1
18
28
S
1
2
3
Ciss
Coss
Crss
3950 4925
640 800
210 260
pF
pF
pF
Terminals:
1 - Gate
VGS = 0 V, VDS = 25 V, f = 1 MHz
2 - Drain
3 - Source
Tab - Drain
td(on)
tr
td(off)
tf
35
42
75
20
45
50
95
25
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 Ω (External),
Dim.
Millimeter
Inches
Min.
Min.
Max.
Max.
A
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
A
A12
Qg(on)
Qgs
Qgd
153 190
26 32
85 105
nC
nC
nC
b
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
b
b12
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
RthJC
RthCK
0.30
K/W
K/W
(TO-247)
0.25
e
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
L
L1
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R
S
4.32
5.49
.170
.216
6.15 BSC
242 BSC
Symbol
IS
TestConditions
VGS = 0 V
32
128
1.5
A
TO-268 Outline
ISM
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V, Note 1
A
V
VSD
trr
250
ns
µC
A
QRM
IRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
0.75
7.5
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
