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IXFT26N60P

型号：

IXFT26N60P

描述：

N沟道增强模式快速恢复二极管额定雪崩[ N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

248 K

下载PDF手册
Advance Technical Information  
PolarHVTM  
Power MOSFET  
IXFH 26N60P  
IXFQ 26N60P  
IXFT 26N60P  
IXFV 26N60P  
IXFV 26N60PS  
VDSS = 600  
ID25 = 26  
V
A
RDS(on) ≤ 270 mΩ  
N-Channel Enhancement Mode  
Fast Recovery Diode  
Avalanche Rated  
trr  
≤ 200 ns  
TO-247 (IXFH)  
G
Symbol  
TestConditions  
Maximum Ratings  
D
S
VDSS  
VDGR  
TJ = 25°C to 150°C  
600  
600  
V
TO-3P(IXFQ)  
TJ = 25°C to 150°C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
ID25  
IDM  
TC = 25°C  
26  
65  
A
A
D
S
D (TAB)  
TC = 25°C, pulse width limited by TJM  
TO-268 (IXFT)  
IAR  
TC = 25°C  
TC = 25°C  
TC = 25°C  
26  
40  
A
mJ  
J
EAR  
EAS  
1.2  
G
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 5 Ω  
10  
V/ns  
S
D (TAB)  
PLUS220 (IXFV)  
PD  
TC = 25°C  
460  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D
S
D (TAB)  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body  
300  
250  
°C  
°C  
PLUS220SMD (IXFV_S)  
Md  
Mounting torque (TO-3P&TO-247)  
Mounting force (PLUS220)  
1.13/10 Nm/lb.in.  
FC  
11..65/2.5..15  
N/lb  
Weight  
TO-3P  
TO-248  
TO-268  
PLUS220 & PLUS220SMD  
5.5  
6.0  
5.0  
4.0  
g
g
g
g
G
S
D (TAB)  
D = Drain  
TAB = Drain  
G = Gate  
S = Source  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Features  
z Fast Recovery diode  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 30 V, VDS = 0  
600  
V
V
z Unclamped Inductive Switching (UIS)  
2.5  
5.0  
rated  
z International standard packages  
z Low package inductance  
- easy to drive and to protect  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
µA  
µA  
TJ = 125°C  
250  
Advantages  
z
Easy to mount  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
270 mΩ  
z
Space savings  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
z
High power density  
DS99435(08/05)  
© 2005 IXYS All rights reserved  
IXFH 26N60P IXFQ 26N60P  
IXFV 26N60P IXFV 26N60PS IXFT 26N60P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 0.5 ID25, pulse test  
16  
26  
S
Ciss  
Coss  
Crss  
4150  
400  
27  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
25  
27  
75  
21  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 ID25  
RG = 5 Ω (External)  
Qg(on)  
Qgs  
72  
27  
24  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
RthJC  
RthCK  
0.27 K/W  
K/W  
TO-3P, PLUS220 & TO-247  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
26  
78  
A
ISM  
Repetitive  
A
V
VSD  
IF = IS, VGS = 0 V, pulse test  
1.5  
250  
trr  
IF = 25A, -di/dt = 100 A/µs  
150  
7
ns  
A
IRM  
QRM  
VR = 100V; VGS = 0 V  
0.7  
µC  
CharacteristicCurves  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
@ 25  
º
C
º
C
60  
54  
48  
42  
36  
30  
24  
18  
12  
6
V
10V  
7V  
V
= 10V  
7V  
GS =  
24  
20  
16  
12  
8
GS  
6V  
6V  
4
5V  
5V  
5
0
0
0
3
6
9
12 15 18 21 24 27 30  
0
1
2
3
4
6
7
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXFH 26N60P IXFQ 26N60P  
IXFV 26N60P IXFV 26N60PS IXFT 26N60P  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
3.2  
24  
20  
16  
12  
8
V
= 10V  
7V  
GS  
V
= 10V  
GS  
2.8  
2.4  
2
6V  
I
= 26A  
D
1.6  
1.2  
0.8  
0.4  
I
= 13A  
D
5V  
12  
4
0
0
2
4
6
8
10  
14  
16  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Temperature  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
30  
27  
24  
21  
18  
15  
12  
9
3.2  
2.8  
2.4  
2
V
GS  
= 10V  
∫
T = 125 C  
J
1.6  
1.2  
0.8  
6
∫
T = 25 C  
J
3
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0
10  
20  
30  
40  
50  
60  
I D - Amperes  
TC - Degrees Centigrade  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = -40  
25  
125  
∫
C
C
∫
∫
C
∫
T = 125 C  
J
25  
∫
C
C
-40  
∫
0
0
0
5
10 15 20 25 30 35 40 45 50  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
VG S - Volts  
I D - Amperes  
© 2005 IXYS All rights reserved  
IXFH 26N60P IXFQ 26N60P  
IXFV 26N60P IXFV 26N60PS IXFT 26N60P  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
V
= 300V  
9
8
7
6
5
4
3
2
1
0
DS  
I
I
= 13A  
D
G
= 10mA  
∫
T = 125 C  
J
∫
T = 25 C  
J
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 11. Capacitance  
10000  
1000  
100  
f = 1MHz  
C
iss  
C
oss  
C
rss  
15  
10  
0
5
10  
20  
25  
30  
35  
40  
VD S - Volts  
Fig. 12. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFH 26N60P IXFQ 26N60P  
IXFV 26N60P IXFV 26N60PS IXFT 26N60P  
TO-3P (IXFQ) Outline  
TO-247 AD (IXFH) Outline  
TO-268 (IXFT) Outline  
1
2
3
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
PLUS220SMD (IXFV_S)  
PLUS220 (IXFV) Outline  
E
E1  
A
A1  
E1  
L2  
A
A1  
E
E1  
E1  
L2  
A
D1  
A1  
A2  
A3  
b
c
D
D
D
L3  
A3  
L4  
L3  
L1  
L
L
L1  
D1  
E
2X b  
c
e
A2  
E1  
e
c
3X b  
A2  
2X e  
L
L1  
L2  
L3  
L4  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
TAB - Drain  
A
A1  
A2  
b
Terminals:  
1 - Gate  
c
D
D1  
E
E1  
e
2 - Drain  
3 - Source  
4 (TAB) - Drain  
L
L1  
L2  
L3  
© 2005 IXYS All rights reserved  
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