Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 60N25Q
IXFK 60N25Q
IXFT 60N25Q
VDSS = 250 V
ID25 = 60 A
RDS(on) = 47 mW
£ 250 ns
trr
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Low Gate Charge and Capacitances
Symbol
TestConditions
Maximum Ratings
TO-247AD(IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
250
250
V
V
(TAB)
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
60
240
60
A
A
A
TO-268 (D3) ( IXFT)
G
(TAB)
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
S
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
TO-264AA(IXFK)
PD
TC = 25°C
360
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D
S
D (TAB)
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
G = Gate
S = Source
Md
Mountingtorque
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
TAB = Drain
Weight
Symbol
TO-247
TO-264
TO-268
6
10
4
g
g
g
Features
• Low gate charge
• Internationalstandardpackages
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• EpoxymeetUL94V-0,flammability
classification
min. typ. max.
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
250
2
V
V
VGS(th)
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
50 mA
Advantages
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
47 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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