HiPerFETTM
Power MOSFETs
Q-Class
IXFH 40N30Q
IXFT 40N30Q
VDSS = 300 V
ID25 = 40 A
RDS(on) = 80 mW
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Preliminary data sheet
TO-268 (IXFT) Case Style
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
300
300
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
G
S
(TAB)
ID25
IDM
IAR
TC = 25°C
40
160
40
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
TO-247 AD (IXFH)
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
1.0
(TAB)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
PD
TC = 25°C
300
W
G = Gate
D = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
S = Source
TAB = Drain
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Features
Md
1.13/10 Nm/lb.in.
• IXYS advanced low Qg process
• Internationalstandardpackages
• Low gate charge and capacitance
- easier to drive
Weight
TO-247
TO-268
6
4
g
g
- faster switching
• Low RDS (on)
Symbol
TestConditions
CharacteristicValues
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL94V-0
flammabilityclassification
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
300
2.0
V
V
4
±100
nA
Advantages
IDSS
TJ = 25°C
TJ = 125°C
25
1
mA
mA
V
GS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
• Easy to mount
• Space savings
• High power density
RDS(on)
80 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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