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LZ2353

型号：

LZ2353

描述：

三分之一型CCD传感器面积与410的k个像素[ 1/3-type CCD Area Sensors with 410 k Pixels ]

品牌：

SHARP[ SHARP ELECTRIONIC COMPONENTS ]

页数：

12 页

PDF大小：

99 K

下载PDF手册
LZ2353B/LZ2354BJ  
1/3-type CCD Area Sensors  
with 410 k Pixels  
LZ2353B/  
LZ2354BJ  
DESCRIPTION  
PIN CONNECTIONS  
The LZ2353B/LZ2354BJ are 1/3-type (6.0 mm)  
solid-state image sensors that consist of PN photo-  
diodes and CCDs (charge-coupled devices). With  
approximately 410 000 pixels (811 horizontal x 507  
vertical), the sensor provides a stable high-resolution  
color (LZ2353B)/B/W (LZ2354BJ) image.  
16-PIN HALF-PITCH WDIP  
TOP VIEW  
ØV4  
ØV3  
1
2
3
4
5
6
7
8
16 ØH2  
15 ØH1  
14 ØLH1  
13 ØRS  
12 PW  
11 OFD  
10 GND  
ØV2  
FEATURES  
ØV1  
• Number of effective pixels : 768 (H) x 494 (V)  
• Number of optical black pixels  
– Horizontal : 3 front and 40 rear  
– Vertical : 11 front and 2 rear  
• Pixel pitch : 6.4 µm (H) x 7.5 µm (V)  
• Mg, G, Cy, and Ye complementary color filters  
(For LZ2353B)  
GND  
NC1  
NC2  
OS  
9
OD  
• Low fixed-pattern noise and lag  
• No burn-in and no image distortion  
• Blooming suppression structure  
• Built-in output amplifier  
• Variable electronic shutter (1/60 to 1/10 000 s)  
• Compatible with NTSC standard (LZ2353B)/  
EIA standard (LZ2354BJ)  
(WDIP016-N-0450)  
PRECAUTIONS  
• The exit pupil position of lens should be more  
than 25 mm (LZ2353B)/20 mm (LZ2354BJ) from  
the top surface of the CCD.  
• Package :  
16-pin half-pitch WDIP [Ceramic]  
(WDIP016-N-0450)  
• Refer to "PRECAUTIONS FOR CCD AREA  
SENSORS" for details.  
Row space : 11.43 mm  
COMPARISON TABLE  
LZ2353B  
NTSC standard (Color)  
LZ2354BJ  
EIA standard (B/W)  
TV standard  
Characteristics  
Refer to each following specification.  
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in  
catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.  
1
LZ2353B/LZ2354BJ  
PIN DESCRIPTION  
SYMBOL  
PIN NAME  
Output transistor drain  
OD  
OS  
Output signals  
ØRS  
Reset transistor clock  
Vertical shift register clock  
Horizontal shift register clock  
Horizontal shift register final stage clock  
Overflow drain  
ØV1, ØV2, ØV3, ØV4  
ØH1, ØH2  
ØLH1  
OFD  
PW  
P-well  
GND  
Ground  
NC1, NC2  
No connection  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
Output transistor drain voltage  
Overflow drain voltage  
(TA = +25 ˚C)  
UNIT NOTE  
SYMBOL  
VOD  
VOFD  
VØRS  
VØV  
VØH  
VØLH  
VPW-VØV  
TSTG  
RATING  
0 to +18  
0 to +55  
–0.3 to +18  
VPW to +18  
–0.3 to +18  
–0.3 to +18  
–28 to 0  
V
V
V
V
V
V
Reset gate clock voltage  
Vertical shift register clock voltage  
Horizontal shift register clock voltage  
Horizontal shift register final stage clock voltage  
Voltage difference between P-well and vertical clock  
Storage temperature  
V
1
–40 to +85  
–20 to +70  
˚C  
˚C  
Ambient operating temperature  
TOPR  
NOTE :  
1. The OFD clock ØOFD is excluded.  
2
LZ2353B/LZ2354BJ  
RECOMMENDED OPERATING CONDITIONS  
PARAMETER  
Ambient operating temperature  
Output transistor drain voltage  
SYMBOL  
MIN.  
TYP. MAX. UNIT NOTE  
TOPR  
VOD  
25.0  
15.0  
˚C  
V
V
V
V
V
14.5  
5.0  
21.5  
16.0  
19.0  
Overflow drain  
voltage  
When DC is applied  
When pulse is applied p-p level  
VOFD  
VØOFD  
1
2
Ground  
GND  
0.0  
P-well voltage  
VPW  
–10.0  
–9.5  
VØVL  
–7.5  
VØV1L, VØV2L  
VØV3L, VØV4L  
VØV1I, VØV2I  
VØV3I, VØV4I  
VØV1H, VØV3H  
VØH1L, VØH2L  
VØH1H, VØH2H  
LOW level  
–9.0  
0.0  
V
V
Vertical shift  
register clock  
INTERMEDIATE level  
HIGH level  
LOW level  
HIGH level  
14.5  
–0.05  
4.7  
15.0  
0.0  
5.0  
17.0  
0.05  
6.0  
V
V
V
Horizontal shift  
register clock  
Horizontal shift  
register final  
stage clock  
LOW level  
HIGH level  
VØLH1L  
VØLH1H  
–0.05  
0.0  
5.0  
0.05  
6.0  
V
V
4.7  
0.0  
OD – 9.5  
LOW level  
HIGH level  
VØRSL  
VØRSH  
V
OD – 14.0  
10.0  
V
V
Reset gate clock  
V
fØV1, fØV2  
fØV3, fØV4  
fØH1, fØH2, fØLH1  
fØRS  
Vertical shift register clock frequency  
15.73  
kHz  
Horizontal shift register clock frequency  
Reset gate clock frequency  
14.32  
14.32  
MHz  
MHz  
NOTES :  
• Connect NC1 and NC2 to GND directly or through a capacitor larger than 0.047 µF.  
1. When DC voltage is applied, shutter speed is 1/60-second.  
2. When pulse is applied, shutter speed is less than 1/60-second.  
* To apply power, first connect GND and then turn on VOFD. After turning on VOFD, turn on PW first and then turn on other  
powers and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied.  
3
LZ2353B/LZ2354BJ  
CHARACTERISTICS FOR LZ2353B (Drive method : Field accumulation)  
(TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS".  
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)  
PARAMETER  
Standard output voltage  
SYMBOL  
VO  
MIN.  
700  
TYP. MAX. UNIT NOTE  
150  
mV  
%
2
3
Photo response non-uniformity  
Saturation output voltage  
Dark output voltage  
Dark signal non-uniformity  
Sensitivity  
PRNU  
VSAT  
VDARK  
DSNU  
R
10  
mV  
mV  
mV  
mV  
dB  
%
4
0.5  
0.5  
350  
–84  
3.0  
2.0  
1, 5  
1, 6  
7
8
9
260  
Smear ratio  
Image lag  
SMR  
AI  
–76  
1.0  
Blooming suppression ratio  
Output transistor drain current  
Output impedance  
Dark noise  
OB difference in level  
Vector breakup  
ABL  
IOD  
RO  
VNOISE  
1 000  
10  
4.0  
350  
0.2  
8.0  
mA  
$
mV  
mV  
˚, %  
%
0.3  
1.0  
5.0  
1.5  
2.0  
11  
1, 12  
13  
14  
15  
Line crawling  
Luminance flicker  
%
NOTES :  
• VOFD should be adjusted to the minimum voltage such  
that ABL satisfy the specification, or to the value  
displayed on the device.  
8. The sensor is exposed only in the central area of V/10  
square with a lens at F4, where V is the vertical image  
size. SMR is defined by the ratio of the output voltage  
detected during the vertical blanking period to the  
maximum output voltage in the V/10 square.  
9. The sensor is exposed at the exposure level  
corresponding to the standard conditions. AI is defined  
by the ratio of the output voltage measured at the 1st  
field during the non-exposure period to the standard  
output voltage.  
10. The sensor is exposed only in the central area of V/10  
square, where V is the vertical image size. ABL is  
defined by the ratio of the exposure at the standard  
conditions to the exposure at a point where blooming is  
observed.  
1. TA = +60 ˚C  
2. The average output voltage under uniform illumination.  
The standard exposure conditions are defined as when  
Vo is 150 mV.  
3. The image area is divided into 10 x 10 segments under  
the standard exposure conditions. Each segment's  
voltage is the average output voltage of all pixels within  
the segment. PRNU is defined by (Vmax – Vmin)/Vo,  
where Vmax and Vmin are the maximum and minimum  
values of each segment's voltage respectively.  
4. The image area is divided into 10 x 10 segments. Each  
segment's voltage is the average output voltage of all  
pixels within the segment. VSAT is the minimum  
segment's voltage under 10 times exposure of the  
standard exposure conditions.  
11. The RMS value of the dark noise (after CDS). (100 kHz  
to 4.2 MHz, SC trap on.)  
12. The difference of the average output voltage between  
the effective area and the OB area under non-exposure  
conditions.  
5. The average output voltage under non-exposure  
conditions.  
6. The image area is divided into 10 x 10 segments under  
non-exposure conditions. DSNU is defined by (Vdmax –  
Vdmin), where Vdmax and Vdmin are the maximum and  
minimum values of each segment's voltage respectively.  
7. The average output voltage when a 1 000 lux light  
source with a 90% reflector is imaged by a lens of F4,  
f50 mm.  
13. Observed with a vector scope when the color bar chart  
is imaged under the standard exposure conditions.  
14. The difference between the average output voltage of the  
(Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G +  
Ye) line under the standard exposure conditions.  
15. The difference between the average output voltage of  
the odd field and that of the even field under the  
standard exposure conditions.  
4
LZ2353B/LZ2354BJ  
CHARACTERISTICS FOR LZ2354BJ (Drive method : Field accumulation)  
(TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS".  
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)  
PARAMETER  
Standard output voltage  
SYMBOL  
VO  
MIN.  
700  
410  
TYP. MAX. UNIT NOTE  
150  
mV  
%
2
3
Photo response non-uniformity  
Saturation output voltage  
Dark output voltage  
Dark signal non-uniformity  
Sensitivity  
PRNU  
VSAT  
VDARK  
DSNU  
R
10  
mV  
mV  
mV  
mV  
4
0.5  
0.5  
550  
1
3.0  
2.0  
1, 5  
1, 6  
7
Gamma  
‹
Smear ratio  
Image lag  
SMR  
AI  
–84  
–76  
1.0  
dB  
%
8
9
Blooming suppression ratio  
Output transistor drain current  
Output impedance  
Dark noise  
ABL  
IOD  
RO  
1 000  
10  
4.0  
350  
0.2  
8.0  
mA  
$
mV  
mV  
VNOISE  
0.3  
1.0  
11  
1, 12  
OB difference in level  
NOTES :  
• VOFD should be adjusted to the minimum voltage such  
that ABL satisfy the specification, or to the value  
displayed on the device.  
7. The average output voltage when a 1 000 lux light  
source with a 90% reflector is imaged by a lens of F4,  
f50 mm.  
1. TA = +60 ˚C  
8. The sensor is exposed only in the central area of V/10  
square with a lens at F4, where V is the vertical image  
size. SMR is defined by the ratio of the output voltage  
detected during the vertical blanking period to the  
maximum output voltage in the V/10 square.  
9. The sensor is exposed at the exposure level  
corresponding to the standard conditions. AI is defined  
by the ratio of the output voltage measured at the 1st  
field during the non-exposure period to the standard  
output voltage.  
10. The sensor is exposed only in the central area of V/10  
square, where V is the vertical image size. ABL is  
defined by the ratio of the exposure at the standard  
conditions to the exposure at a point where blooming is  
observed.  
2. The average output voltage under uniform illumination.  
The standard exposure conditions are defined as when  
Vo is 150 mV.  
3. The image area is divided into 10 x 10 segments under  
the standard exposure conditions. Each segment's  
voltage is the average output voltage of all pixels within  
the segment. PRNU is defined by (Vmax – Vmin)/Vo,  
where Vmax and Vmin are the maximum and minimum  
values of each segment's voltage respectively.  
4. The image area is divided into 10 x 10 segments. Each  
segment's voltage is the average output voltage of all  
pixels within the segment. VSAT is the minimum  
segment's voltage under 10 times exposure of the  
standard exposure conditions.  
5. The average output voltage under non-exposure  
conditions.  
11. The RMS value of the dark noise after CDS. (100 kHz to  
4.2 MHz, SC trap on.)  
6. The image area is divided into 10 x 10 segments under  
non-exposure conditions. DSNU is defined by (Vdmax –  
Vdmin), where Vdmax and Vdmin are the maximum and  
minimum values of each segment's voltage respectively.  
12. The difference between the average output voltage of  
the effective area and that of the OB area under non-  
exposure conditions.  
5
LZ2353B/LZ2354BJ  
PIXEL STRUCTURE  
OPTICAL BLACK  
(2 PIXELS)  
1 pin  
OPTICAL BLACK  
(3 PIXELS)  
OPTICAL BLACK  
(40 PIXELS)  
768 (H) x 494 (V)  
OPTICAL BLACK  
(11 PIXELS)  
COLOR FILTER ARRAY (FOR LZ2353B)  
(1, 494)  
(768, 494)  
Cy Ye Cy Ye Cy  
Ye Cy Ye Cy Ye  
Mg  
Cy Ye Cy Ye Cy  
Mg Mg  
Cy Ye Cy Ye Cy  
Mg Mg Mg  
G
Mg  
G
Mg  
G
Mg  
Ye Cy Ye Cy Ye  
Mg Mg Mg  
Ye Cy Ye Cy Ye  
Mg Mg  
G
Mg  
G
G
G
G
G
G
G
G
G
G
G
Cy Ye Cy Ye Cy  
Mg Mg Mg  
Cy Ye Cy Ye Cy  
Mg Mg  
Cy Ye Cy Ye Cy  
Mg Mg Mg  
Ye Cy Ye Cy Ye  
Mg Mg  
Ye Cy Ye Cy Ye  
Mg Mg Mg  
Ye Cy Ye Cy Ye  
Mg Mg  
G
G
G
G
G
G
G
G
G
G
ODD  
field  
EVEN  
field  
G
G
G
G
G
(1, 1)  
(768, 1)  
6
LZ2353B/LZ2354BJ  
TIMING CHART  
(ODD FIELD)  
VERTICAL TRANSFER TIMING  
Shutter speed  
1/2 000 s  
525  
1
10  
HD  
VD  
ØV1  
ØV2  
ØV3  
ØV4  
ØOFD  
489 491 493 OB1  
OB1 OB3 OB5 OB7 OB9OB11  
2
4
6
8
10 12 14 16  
+
+
+
+
+
+
+
+
+
+
1
+
+
+
+
9
+
+
+
+
490 492 494 OB2  
OB2 OB4 OB6 OB8OB10  
3
5
7
11 13 15 17  
OS  
(EVEN FIELD)  
263  
272  
HD  
VD  
ØV1  
ØV2  
ØV3  
ØV4  
ØOFD  
488 490 492 494 OB2  
OB2 OB4 OB6 OB8OB10  
1
3
5
7
9
11 13 15  
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
489 491 493 OB1  
OB1 OB3 OB5 OB7 OB9OB11  
2
4
6
8
10 12 14 16  
OS  
HORIZONTAL TRANSFER TIMING  
910, 1  
91  
HD  
ØH1  
ØLH1  
ØH2  
ØRS  
OS  
PRE SCAN (22)  
OB (3)  
OUTPUT (768) 1πππ  
π768  
OB (40)  
42  
74  
ØV1  
ØV2  
ØV3  
58  
90  
34  
82  
50  
98  
ØV4  
66  
86  
ØOFD  
7
LZ2353B/LZ2354BJ  
READOUT TIMING  
(ODD FIELD)  
1
91  
910, 1  
91  
HD  
336  
404  
42 74  
42 74  
ØV1  
ØV2  
ØV3  
58 90  
208  
644  
58 90  
82  
404  
472  
34 82  
240  
50  
98  
50  
98  
ØV4  
(EVEN FIELD)  
1
91  
910, 1  
91  
HD  
336  
404  
404  
42 74  
58 90  
ØV1  
ØV2  
208  
90  
472  
34 82  
50  
240  
82  
98  
ØV3  
ØV4  
644  
98  
8
LZ2353B/LZ2354BJ  
SYSTEM CONFIGURATION EXAMPLE  
+
+
OD  
GND  
OFD  
PW  
OS  
NC2  
NC1  
GND  
ØV1  
ØRS  
ØLH1  
ØH1  
ØV2  
ØV3  
ØH2  
ØV4  
+
POFD  
VMb  
VL  
VOFDH  
VH3BX  
OFDX  
V2X  
V2  
V4  
V1X  
NC  
V3B  
V3A  
V1B  
V1A  
VMa  
VH  
VH1AX  
V3X  
VDD  
+
GND  
VH3AX  
V4X  
VH1BX  
+
+
9
PACKAGES FOR CCD AND CMOS DEVICES  
PACKAGE  
(Unit : mm)  
16 WDIP (WDIP016-N-0450)  
Center of effective imaging area  
and center of package  
±0.15  
12.20  
±0.10  
±0.45  
0.85  
10.50  
(◊2)  
(◊1 : Reference area)  
(◊2 : Lid's size)  
16  
9
Glass Lid  
¬
CCD  
CCD  
Package (Cerdip)  
1
8
0.04  
(◊  
1)  
Cross Section A-A'  
MAX.  
4-0.20R  
±0.15  
6.10  
MAX.  
Rotation error of die : ¬ = 1.5˚  
9.2  
2.5  
A
A'  
TYP.  
±0.05  
P-1.27  
0.25  
0.25  
M
±0.25  
TYP.  
TYP.  
11.43  
0.30  
0.46  
10  
PRECAUTIONS FOR CCD AREA SENSORS  
PRECAUTIONS FOR CCD AREA SENSORS  
(In the case of plastic packages)  
1. Package Breakage  
– The leads of the package are fixed with  
package body (plastic), so stress added to a  
lead could cause a crack in the package  
body (plastic) in the jointed part of the lead.  
In order to prevent the package from being broken,  
observe the following instructions :  
1) The CCD is a precise optical component and  
the package material is ceramic or plastic.  
Therefore,  
Glass cap  
Package  
ø Take care not to drop the device when  
mounting, handling, or transporting.  
Lead  
Fixed  
ø Avoid giving a shock to the package.  
Especially when leads are fixed to the socket  
or the circuit board, small shock could break  
the package more easily than when the  
package isn’t fixed.  
Stand-off  
2) When applying force for mounting the device or  
any other purposes, fix the leads between a  
joint and a stand-off, so that no stress will be  
given to the jointed part of the lead. In addition,  
when applying force, do it at a point below the  
stand-off part.  
3) When mounting the package on the housing,  
be sure that the package is not bent.  
– If a bent package is forced into place  
between a hard plate or the like, the pack-  
age may be broken.  
4) If any damage or breakage occurs on the sur-  
face of the glass cap, its characteristics could  
deteriorate.  
(In the case of ceramic packages)  
– The leads of the package are fixed with low  
melting point glass, so stress added to a  
lead could cause a crack in the low melting  
point glass in the jointed part of the lead.  
Therefore,  
ø Do not hit the glass cap.  
ø Do not give a shock large enough to cause  
distortion.  
ø Do not scrub or scratch the glass surface.  
– Even a soft cloth or applicator, if dry, could  
cause dust to scratch the glass.  
Low melting point glass  
Lead  
2. Electrostatic Damage  
As compared with general MOS-LSI, CCD has  
lower ESD. Therefore, take the following anti-static  
measures when handling the CCD :  
Fixed  
1) Always discharge static electricity by grounding  
the human body and the instrument to be used.  
To ground the human body, provide resistance  
of about 1 M$ between the human body and  
the ground to be on the safe side.  
Stand-off  
2) When directly handling the device with the  
fingers, hold the part without leads and do not  
touch any lead.  
11  
PRECAUTIONS FOR CCD AREA SENSORS  
3) To avoid generating static electricity,  
a. do not scrub the glass surface with cloth or  
plastic.  
ø The contamination on the glass surface  
should be wiped off with a clean applicator  
soaked in Isopropyl alcohol. Wipe slowly and  
gently in one direction only.  
b. do not attach any tape or labels.  
c. do not clean the glass surface with dust-  
cleaning tape.  
– Frequently replace the applicator and do not  
use the same applicator to clean more than  
one device.  
4) When storing or transporting the device, put it in  
a container of conductive material.  
◊ Note : In most cases, dust and contamination  
are unavoidable, even before the device  
is first used. It is, therefore, recommended  
that the above procedures should be  
taken to wipe out dust and contamination  
before using the device.  
3. Dust and Contamination  
Dust or contamination on the glass surface could  
deteriorate the output characteristics or cause a  
scar. In order to minimize dust or contamination on  
the glass surface, take the following precautions :  
1) Handle the CCD in a clean environment such  
as a cleaned booth. (The cleanliness level  
should be, if possible, class 1 000 at least.)  
2) Do not touch the glass surface with the fingers.  
If dust or contamination gets on the glass  
surface, the following cleaning method is  
recommended :  
4. Other  
1) Soldering should be manually performed within  
5 seconds at 350 °C maximum at soldering iron.  
2) Avoid using or storing the CCD at high tem-  
perature or high humidity as it is a precise  
optical component. Do not give a mechanical  
shock to the CCD.  
ø Dust from static electricity should be blown  
off with an ionized air blower. For anti-  
electrostatic measures, however, ground all  
the leads on the device before blowing off  
the dust.  
3) Do not expose the device to strong light. For  
the color device, long exposure to strong light  
will fade the color of the color filters.  
12  
厂商 型号 描述 页数 下载

YAGEO

 		LZ200M0150ST [ Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 150uF, Through Hole Mount ] 1 页

YAGEO

 		LZ200M0270ST [ Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 270uF, Through Hole Mount ] 1 页

YAGEO

 		LZ200M0560ST [ Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 560uF, Through Hole Mount ] 1 页

ETC

 		LZ2018 线阵CCD图像阵列\n[ Linear CCD Image Array ] 4 页

ETC

 		LZ2019 线阵CCD图像阵列\n[ Linear CCD Image Array ] 4 页

YEASHIN

 		LZ20V 500毫瓦LL- 34密封式玻璃齐纳稳压器[ 500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators ] 4 页

EBMPAPST

 		LZ210 特殊部位 - TUBEAXIAL范[ SPECIAL PARTS - TUBEAXIAL FAN ] 1 页

ETC

 		LZ2111J 面阵CCD图像阵列\n[ Area CCD Image Array ] 7 页

ETC

 		LZ2112J 面阵CCD图像阵列\n[ Area CCD Image Array ] 7 页

SHARP

 		LZ2113Y [ Analog Circuit, 1 Func, CDIP20, WINDOWED, CERAMIC, DIP-20 ] 1 页

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