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4N35_98

型号：

4N35_98

描述：

兼容标准TTL集成电路[ COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS ]

品牌：

TI[ TEXAS INSTRUMENTS ]

页数：

8 页

PDF大小：

115 K

下载PDF手册
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS  
Gallium-Arsenide-Diode Infrared Source  
Optically Coupled to a Silicon npn  
Phototransistor  
†
DCJ OR 6-TERMINAL DUAL-IN-LINE PACKAGE  
(TOP VIEW)  
ANODE  
CATHODE  
NC  
BASE  
1
2
3
6
5
4
High Direct-Current Transfer Ratio  
COLLECTOR  
EMITTER  
High-Voltage Electrical Isolation  
1.5-kV, 2.5-kV, or 3.55-kV Rating  
†
High-Speed Switching  
4N35 only  
NC – No internal connection  
t = 7 µs, t = 7 µs Typical  
r
f
schematic  
Typical Applications Include Remote  
Terminal Isolation, SCR and Triac Triggers,  
Mechanical Relays and Pulse Transformers  
ANODE  
BASE  
COLLECTOR  
CATHODE  
NC  
Safety Regulatory Approval  
UL/CUL, File No. E65085  
EMITTER  
†
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)  
Input-to-output peak voltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.55 kV  
4N36 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV  
4N37 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV  
Input-to-output root-mean-square voltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV  
4N36 . . . . . . . . . . . . . . . . . . . . . . . . 1.75 kV  
4N37 . . . . . . . . . . . . . . . . . . . . . . . . 1.05 kV  
Collector-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 V  
Collector-emitter voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V  
Emitter-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V  
Input-diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V  
Input-diode forward current: Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 mA  
Peak (1 µs, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A  
Phototransistor continuous collector current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA  
Continuous total power dissipation at (or below) 25°C free-air temperature:  
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW  
Phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW  
Continuous power dissipation at (or below) 25°C lead temperature:  
Infrared-emitting diode (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW  
Phototransistor (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW  
Operating temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 100°C  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 150°C  
A
Storage temperature range, T  
stg  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C  
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may  
affect device reliability.  
NOTES: 1. This value applies when the base-emitter diode is open-circulated.  
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.  
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.  
4. Derate linearly to 100°C lead temperature at the rate of 1.33 mW/°C. Lead temperature is measured on the collector lead  
0.8 mm (1/32 inch) from the case.  
5. Derate linearly to 100°C lead temperature at the rate of 6.7 mW/°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
electrical characteristics at 25°C free-air temperature (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
V
†
70  
†
30  
†
7
V
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Input diode static reverse current  
Input-to-output current  
I
I
I
= 100 µA,  
= 10 mA,  
= 100 µA,  
I
E
I
B
I
C
= 0,  
= 0,  
= 0,  
I
F
I
F
I
F
= 0  
= 0  
= 0  
(BR)CBO  
(BR)CEO  
(BR)EBO  
C
C
E
V
V
†
10  
I
R
V
V
V
= 6 V  
µA  
mA  
R
I
IO  
= rated peak value,  
t = 8 ms  
100  
IO  
CE  
CE  
†
†
= 10 V,  
I
= 10 mA,  
= 10 mA,  
I
= 0  
10  
F
F
B
B
V
T
= 10 V,  
= –55°C  
I
I
= 0,  
4
I
On-state collector current  
mA  
A
C(on)  
V
T
A
= 10 V,  
I
F
= 10 mA,  
I
B
= 0,  
CE  
= 100°C  
†
4
V
= 10 V,  
= 30 V,  
I
I
= 0  
I
I
= 0  
1
50  
nA  
CE  
CE  
F
B
I
Off-state collector current  
V
T
A
= 0,  
= 0,  
C(off)  
F
B
†
500  
µA  
= 100°C  
h
FE  
Transistor static forward current transfer ratio  
V
CE  
= 5 V,  
I
C
= 10 mA,  
I
F
= 0  
500  
†
†
†
†
†
†
†
I
I
I
I
= 10 mA  
= 10 mA,  
= 10 mA,  
= 0.5 mA,  
0.8  
0.9  
0.7  
1.5  
1.7  
1.4  
0.3  
F
F
F
C
V
Input diode static forward voltage  
T
= –55°C  
= 100°C  
V
F
A
T
A
V
Collector-emitter saturation voltage  
Input-to-output internal resistance  
Input-to-output capacitance  
I
F
= 10 mA,  
I
= 0 mA  
V
Ω
CE(sat)  
B
11†  
10  
r
IO  
V
= 500 V, See Note 6  
IO  
IO  
†
C
V
= 0,  
f = 1 MHz,  
See Note 6  
1
2.5  
pF  
io  
†
JEDEC registered data  
NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.  
†
switching characteristics at 25°C free-air temperature  
PARAMETER  
TEST CONDITIONS  
= 10 V, = 2 mA,  
MIN  
TYP  
7
MAX  
10  
UNIT  
t
Time-on time  
Turn-off time  
V
I
on  
CC  
= 100 Ω,  
C(on)  
See Figure 1  
µs  
t
R
7
10  
off  
L
†
JEDEC registered data  
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
PARAMETER MEASUREMENT INFORMATION  
47 Ω  
Input  
Input  
0 V  
Output  
(see Note B)  
t
on  
t
off  
Output  
+
–
90%  
R
= 100 Ω  
L
V
CC  
= 10 V  
10%  
TEST CIRCUIT  
VOLTAGE WAVEFORMS  
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Z = 50 Ω, t ≤ 15 ns, duty cycle  
1%,  
O
r
t
w
= 100 µs.  
B. The output waveform is monitored on an oscilloscope with the following characteristics: t ≤ 12 ns, R ≥ 1 MΩ, C ≤ 20 pF.  
in in  
r
Figure 1. Switching Times  
TYPICAL CHARACTERISTICS  
TRANSISTOR STATIC FORWARD  
CURRENT TRANSFER RATIO (NORMALIZED)  
OFF-STATE COLLECTOR CURRENT  
vs  
vs  
ON-STATE COLLECTOR CURRENT  
FREE-AIR TEMPERATURE  
10,000  
4,000  
1.6  
1.4  
V
= 10 V  
= 0  
= 0  
V
= 5 V  
CE  
CE  
= 0  
I
B
I
F
I
F
T = 25°C  
A
1,000  
400  
1.2  
1
100  
40  
0.8  
10  
4
0.6  
0.4  
1
0.2  
0
Normalized to 1 V  
at I = 1 mA  
C
0.4  
0.1  
0
10 20 30 40 50 60 70 80 90 100  
0.1 0.2 0.4  
1
2
4
10 20 40  
100  
T
A
– Free-Air Temperature – °C  
I
– On-State Collector Current – mA  
C(on)  
Figure 2  
Figure 3  
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
TYPICAL CHARACTERISTICS  
COLLECTOR CURRENT  
vs  
INPUT-DIODE FORWARD  
MODULATION FREQUENCY  
CONDUCTION CHARACTERISTICS  
160  
140  
120  
100  
80  
10  
4
V
= 10 V  
= 0  
= 25°C  
CC  
I
T
B
A
T
= 25°C  
= 70°C  
A
R
= 100 Ω  
L
2
1
R
= 1 Ω  
L
0.4  
T
A
0.2  
0.1  
60  
R
= 475 Ω  
L
40  
0.04  
20  
0
0.02  
0.01  
T
= 25°C  
A
1
4
10  
40  
100  
400 1000  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
V
F
– Forward Voltage – V  
f
– Modulation Frequency – kHz  
mod  
Figure 4  
Figure 5  
COLLECTOR CURRENT  
vs  
COLLECTOR-EMITTER VOLTAGE  
COLLECTOR CURRENT  
vs  
INPUT-DIODE FORWARD CURRENT  
60  
50  
40  
30  
20  
10  
100  
V
= 10 V  
CE  
= 0  
I
T
= 0  
= 25°C  
B
A
I
T
B
40  
= 25°C  
A
See Note A  
10  
4
Max Continuous  
Power Dissipation  
1
I
= 20 mA  
F
0.4  
I
I
= 15 mA  
= 10 mA  
F
0.1  
F
0.04  
I
F
= 5 mA  
0
0.01  
0
2
4
6
8
10 12 14 16 18 20  
0.1  
0.4  
1
4
10  
40  
100  
V
CE  
– Collector-Emitter Voltage – V  
I
F
– Input-Diode Forward Current – mA  
NOTE A. Pulse operation of input diode is required for operation  
beyond limits shown by dotted lines.  
Figure 6  
Figure 7  
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
TYPICAL CHARACTERISTICS  
ON-STATE COLLECTOR CURRENT  
(RELATIVE TO VALUE AT 25°C)  
vs  
FREE-AIR TEMPERATURE  
1.6  
1.4  
1.2  
1
V
= 10 V  
= 0  
= 10 mA  
CE  
I
B
I
F
See Note A  
0.8  
0.6  
0.4  
0.2  
0
–75 –50 –25  
0
25  
50  
75  
100 125  
T
A
– Free-Air Temperature – °C  
NOTE A. These parameters were measured using pulse  
techniques, t = 1 ms, duty cycle ≤ 2 %.  
w
Figure 8  
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
APPLICATION INFORMATION  
The devices consist of a gallium-arsenide infrared-emitting diode and an npn silicon phototransistor. Each  
device is available in a 6-terminal plastic dual-in-line package, shown in Figure 9, or in a DCJ plastic dual  
surface-mount optocoupler package (see Mechanical Data).  
0.370 (9,40)  
0.330 (8,38)  
6
5
4
Index Dot  
(see Note B)  
1
2
3
(see Note C)  
C
C
L
L
0.300 (7,62) T.P.  
(see Note A)  
0.215 (5,46)  
0.115 (2,92)  
0.070 (1,78)  
0.020 (0,51)  
0.260 (6,61)  
0.240 (6,09)  
0.070 (1,78) MAX  
6 Places  
Seating Plane  
105°  
90°  
0.040 (1,01) MIN  
0.090 (2,29)  
0.050 (1,27)  
4 Places  
0.021 (0,534)  
0.015 (0,381)  
6 Places  
0.012 (0,305)  
0.008 (0,203)  
0.150 (3,81)  
0.125 (3,17)  
0.100 (2,54) T.P.  
(see Note A)  
NOTES: A. Terminals are within 0.005 (0,13) radius of true position (T.P.) with maximum material condition and unit installed.  
B. Terminal 1 identified by index dot.  
C. The dimensions given fall within JEDEC MO-001 AM dimensions.  
D. All linear dimensions are in inches (millimeters).  
Figure 9. Plastic Dual-in-Line Package  
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
MECHANICAL DATA  
DCJ (R-PDSO-G6)  
PLASTIC DUAL SMALL-OUTLINE OPTOCOUPLER  
0.090 (2,29)  
0.050 (1,27)  
0.100 (2,54)  
4
0.070 (1,78)  
0.045 (1,14)  
6
0.405 (10,29)  
0.385 (9,78)  
0.008 (0,20) NOM  
0.260 (6,60)  
0.240 (6,10)  
Gage Plane  
1
3
0.370 (9,40)  
0.330 (8,38)  
0.010 (0,25)  
0°–5°  
0.030 (0,76) MIN  
0.150 (3,81) MAX  
Seating Plane  
0.004 (0,10)  
0.020 (0,51) MAX  
4073328/A 10/96  
NOTES: A. All linear dimensions are in inches (millimeters)  
B. This drawing is subject to change without notice.  
C. Terminal 1 identified by index dot.  
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor  
product or service without notice, and advises its customers to obtain the latest version of relevant information  
to verify, before placing orders, that the information being relied on is current and complete.  
TI warrants performance of its semiconductor products and related software to the specifications applicable at  
the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are  
utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each  
device is not necessarily performed, except those mandated by government requirements.  
Certain applications using semiconductor products may involve potential risks of death, personal injury, or  
severe property or environmental damage (“Critical Applications”).  
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED  
TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS.  
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI  
products in such applications requires the written approval of an appropriate TI officer. Questions concerning  
potential risk applications should be directed to TI through a local SC sales office.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards should be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance, customer product design, software performance, or  
infringement of patents or services described herein. Nor does TI warrant or represent that any license, either  
express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property  
right of TI covering or relating to any combination, machine, or process in which such semiconductor products  
or services might be or are used.  
Copyright 1998, Texas Instruments Incorporated  
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