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4N35_05

型号：

4N35_05

描述：

兼容标准TTL集成电路[ COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS ]

品牌：

TI[ TEXAS INSTRUMENTS ]

页数：

9 页

PDF大小：

135 K

下载PDF手册
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS  
Gallium-Arsenide-Diode Infrared Source  
Optically Coupled to a Silicon npn  
Phototransistor  
†
DCJ OR 6-TERMINAL DUAL-IN-LINE PACKAGE  
(TOP VIEW)  
ANODE  
CATHODE  
NC  
BASE  
1
2
3
6
5
4
High Direct-Current Transfer Ratio  
COLLECTOR  
EMITTER  
High-Voltage Electrical Isolation  
1.5-kV, 2.5-kV, or 3.55-kV Rating  
†
High-Speed Switching  
4N35 only  
NC – No internal connection  
t = 7 µs, t = 7 µs Typical  
r
f
schematic  
Typical Applications Include Remote  
Terminal Isolation, SCR and Triac Triggers,  
Mechanical Relays and Pulse Transformers  
ANODE  
BASE  
COLLECTOR  
CATHODE  
NC  
Safety Regulatory Approval  
UL/CUL, File No. E65085  
EMITTER  
†
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)  
Input-to-output peak voltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.55 kV  
4N36 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV  
4N37 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV  
Input-to-output root-mean-square voltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV  
4N36 . . . . . . . . . . . . . . . . . . . . . . . . 1.75 kV  
4N37 . . . . . . . . . . . . . . . . . . . . . . . . 1.05 kV  
Collector-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 V  
Collector-emitter voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V  
Emitter-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V  
Input-diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V  
Input-diode forward current: Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 mA  
Peak (1 µs, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A  
Phototransistor continuous collector current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA  
Continuous total power dissipation at (or below) 25°C free-air temperature:  
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW  
Phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW  
Continuous power dissipation at (or below) 25°C lead temperature:  
Infrared-emitting diode (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW  
Phototransistor (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW  
Operating temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 100°C  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 150°C  
A
Storage temperature range, T  
stg  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C  
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may  
affect device reliability.  
NOTES: 1. This value applies when the base-emitter diode is open-circulated.  
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.  
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.  
4. Derate linearly to 100°C lead temperature at the rate of 1.33 mW/°C. Lead temperature is measured on the collector lead  
0.8 mm (1/32 inch) from the case.  
5. Derate linearly to 100°C lead temperature at the rate of 6.7 mW/°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
electrical characteristics at 25°C free-air temperature (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
V
†
70  
†
30  
†
7
V
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Input diode static reverse current  
Input-to-output current  
I
I
I
= 100 µA,  
= 10 mA,  
= 100 µA,  
I
E
I
B
I
C
= 0,  
= 0,  
= 0,  
I
F
I
F
I
F
= 0  
= 0  
= 0  
(BR)CBO  
(BR)CEO  
(BR)EBO  
C
C
E
V
V
†
10  
I
R
V
V
V
= 6 V  
µA  
mA  
R
I
IO  
= rated peak value,  
t = 8 ms  
100  
IO  
CE  
CE  
†
†
= 10 V,  
I
= 10 mA,  
= 10 mA,  
I
= 0  
10  
F
F
B
B
V
T
= 10 V,  
= –55°C  
I
I
= 0,  
4
I
On-state collector current  
mA  
A
C(on)  
V
T
A
= 10 V,  
I
F
= 10 mA,  
I
B
= 0,  
CE  
= 100°C  
†
4
V
= 10 V,  
= 30 V,  
I
I
= 0  
I
I
= 0  
1
50  
nA  
CE  
CE  
F
B
I
Off-state collector current  
V
T
A
= 0,  
= 0,  
C(off)  
F
B
†
500  
µA  
= 100°C  
h
FE  
Transistor static forward current transfer ratio  
V
CE  
= 5 V,  
I
C
= 10 mA,  
I
F
= 0  
500  
†
†
†
†
†
†
†
I
I
I
I
= 10 mA  
= 10 mA,  
= 10 mA,  
= 0.5 mA,  
0.8  
0.9  
0.7  
1.5  
1.7  
1.4  
0.3  
F
F
F
C
V
Input diode static forward voltage  
T
= –55°C  
= 100°C  
V
F
A
T
A
V
Collector-emitter saturation voltage  
Input-to-output internal resistance  
Input-to-output capacitance  
I
F
= 10 mA,  
I
= 0 mA  
V
Ω
CE(sat)  
B
11†  
10  
r
IO  
V
= 500 V, See Note 6  
IO  
IO  
†
C
V
= 0,  
f = 1 MHz,  
See Note 6  
1
2.5  
pF  
io  
†
JEDEC registered data  
NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.  
†
switching characteristics at 25°C free-air temperature  
PARAMETER  
TEST CONDITIONS  
= 10 V, = 2 mA,  
MIN  
TYP  
7
MAX  
10  
UNIT  
t
Time-on time  
Turn-off time  
V
I
on  
CC  
= 100 Ω,  
C(on)  
See Figure 1  
µs  
t
R
7
10  
off  
L
†
JEDEC registered data  
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
PARAMETER MEASUREMENT INFORMATION  
47 Ω  
Input  
Input  
0 V  
Output  
(see Note B)  
t
on  
t
off  
Output  
+
–
90%  
R
= 100 Ω  
L
V
CC  
= 10 V  
10%  
TEST CIRCUIT  
VOLTAGE WAVEFORMS  
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Z = 50 Ω, t ≤ 15 ns, duty cycle  
1%,  
O
r
t
w
= 100 µs.  
B. The output waveform is monitored on an oscilloscope with the following characteristics: t ≤ 12 ns, R ≥ 1 MΩ, C ≤ 20 pF.  
in in  
r
Figure 1. Switching Times  
TYPICAL CHARACTERISTICS  
TRANSISTOR STATIC FORWARD  
CURRENT TRANSFER RATIO (NORMALIZED)  
OFF-STATE COLLECTOR CURRENT  
vs  
vs  
ON-STATE COLLECTOR CURRENT  
FREE-AIR TEMPERATURE  
10,000  
4,000  
1.6  
1.4  
V
= 10 V  
= 0  
= 0  
V
= 5 V  
CE  
CE  
= 0  
I
B
I
F
I
F
T = 25°C  
A
1,000  
400  
1.2  
1
100  
40  
0.8  
10  
4
0.6  
0.4  
1
0.2  
0
Normalized to 1 V  
at I = 1 mA  
C
0.4  
0.1  
0
10 20 30 40 50 60 70 80 90 100  
0.1 0.2 0.4  
1
2
4
10 20 40  
100  
T
A
– Free-Air Temperature – °C  
I
– On-State Collector Current – mA  
C(on)  
Figure 2  
Figure 3  
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
TYPICAL CHARACTERISTICS  
COLLECTOR CURRENT  
vs  
INPUT-DIODE FORWARD  
MODULATION FREQUENCY  
CONDUCTION CHARACTERISTICS  
160  
140  
120  
100  
80  
10  
4
V
= 10 V  
= 0  
= 25°C  
CC  
I
T
B
A
T
= 25°C  
= 70°C  
A
R
= 100 Ω  
L
2
1
R
= 1 Ω  
L
0.4  
T
A
0.2  
0.1  
60  
R
= 475 Ω  
L
40  
0.04  
20  
0
0.02  
0.01  
T
= 25°C  
A
1
4
10  
40  
100  
400 1000  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
V
F
– Forward Voltage – V  
f
– Modulation Frequency – kHz  
mod  
Figure 4  
Figure 5  
COLLECTOR CURRENT  
vs  
COLLECTOR-EMITTER VOLTAGE  
COLLECTOR CURRENT  
vs  
INPUT-DIODE FORWARD CURRENT  
60  
50  
40  
30  
20  
10  
100  
V
= 10 V  
CE  
= 0  
I
T
= 0  
= 25°C  
B
A
I
T
B
40  
= 25°C  
A
See Note A  
10  
4
Max Continuous  
Power Dissipation  
1
I
= 20 mA  
F
0.4  
I
I
= 15 mA  
= 10 mA  
F
0.1  
F
0.04  
I
F
= 5 mA  
0
0.01  
0
2
4
6
8
10 12 14 16 18 20  
0.1  
0.4  
1
4
10  
40  
100  
V
CE  
– Collector-Emitter Voltage – V  
I
F
– Input-Diode Forward Current – mA  
NOTE A. Pulse operation of input diode is required for operation  
beyond limits shown by dotted lines.  
Figure 6  
Figure 7  
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
TYPICAL CHARACTERISTICS  
ON-STATE COLLECTOR CURRENT  
(RELATIVE TO VALUE AT 25°C)  
vs  
FREE-AIR TEMPERATURE  
1.6  
1.4  
1.2  
1
V
= 10 V  
= 0  
= 10 mA  
CE  
I
B
I
F
See Note A  
0.8  
0.6  
0.4  
0.2  
0
–75 –50 –25  
0
25  
50  
75  
100 125  
T
A
– Free-Air Temperature – °C  
NOTE A. These parameters were measured using pulse  
techniques, t = 1 ms, duty cycle ≤ 2 %.  
w
Figure 8  
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
APPLICATION INFORMATION  
The devices consist of a gallium-arsenide infrared-emitting diode and an npn silicon phototransistor. Each  
device is available in a 6-terminal plastic dual-in-line package, shown in Figure 9, or in a DCJ plastic dual  
surface-mount optocoupler package (see Mechanical Data).  
0.370 (9,40)  
0.330 (8,38)  
6
5
4
Index Dot  
(see Note B)  
1
2
3
(see Note C)  
C
C
L
L
0.300 (7,62) T.P.  
(see Note A)  
0.215 (5,46)  
0.115 (2,92)  
0.070 (1,78)  
0.020 (0,51)  
0.260 (6,61)  
0.240 (6,09)  
0.070 (1,78) MAX  
6 Places  
Seating Plane  
105°  
90°  
0.040 (1,01) MIN  
0.090 (2,29)  
0.050 (1,27)  
4 Places  
0.021 (0,534)  
0.015 (0,381)  
6 Places  
0.012 (0,305)  
0.008 (0,203)  
0.150 (3,81)  
0.125 (3,17)  
0.100 (2,54) T.P.  
(see Note A)  
NOTES: A. Terminals are within 0.005 (0,13) radius of true position (T.P.) with maximum material condition and unit installed.  
B. Terminal 1 identified by index dot.  
C. The dimensions given fall within JEDEC MO-001 AM dimensions.  
D. All linear dimensions are in inches (millimeters).  
Figure 9. Plastic Dual-in-Line Package  
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
4N35, 4N36, 4N37  
OPTOCOUPLERS  
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998  
MECHANICAL DATA  
DCJ (R-PDSO-G6)  
PLASTIC DUAL SMALL-OUTLINE OPTOCOUPLER  
0.090 (2,29)  
0.050 (1,27)  
0.100 (2,54)  
4
0.070 (1,78)  
0.045 (1,14)  
6
0.405 (10,29)  
0.385 (9,78)  
0.008 (0,20) NOM  
0.260 (6,60)  
0.240 (6,10)  
Gage Plane  
1
3
0.370 (9,40)  
0.330 (8,38)  
0.010 (0,25)  
0°–5°  
0.030 (0,76) MIN  
0.150 (3,81) MAX  
Seating Plane  
0.004 (0,10)  
0.020 (0,51) MAX  
4073328/A 10/96  
NOTES: A. All linear dimensions are in inches (millimeters)  
B. This drawing is subject to change without notice.  
C. Terminal 1 identified by index dot.  
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
PACKAGE OPTION ADDENDUM  
www.ti.com  
8-Apr-2005  
PACKAGING INFORMATION  
Orderable Device  
Status (1)  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
PDIP  
OPTO  
PDIP  
PDIP  
Drawing  
4N35  
4N35DCJ  
4N36  
OBSOLETE  
OBSOLETE  
OBSOLETE  
OBSOLETE  
N
DCJ  
N
6
6
6
6
TBD  
TBD  
TBD  
TBD  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
4N37  
N
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan  
-
The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS  
&
no Sb/Br)  
-
please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
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information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 1  
IMPORTANT NOTICE  
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厂商 型号 描述 页数 下载

MOTOROLA

 		4N30 标准通孔CASE 730A -04[ STANDARD THRU HOLE CASE 730A-04 ] 6 页

TOSHIBA

 		4N30 光电晶体管（ AC LINE /数字逻辑隔离器）[ PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR) ] 5 页

QT

 		4N30 通用6 -PIN PHOTODARLINGTON光耦合器[ GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS ] 6 页

EVERLIGHT

 		4N30 6 PIN PHOTODARLINGTON PHOTOCOUPLER[ 6 PIN PHOTODARLINGTON PHOTOCOUPLER ] 13 页

ISOCOM

 		4N30 光耦合隔离器PHOTODARLINGTON输出[ OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT ] 3 页

FAIRCHILD

 		4N30 通用6引脚光电复合光耦[ General Purpose 6-Pin Photodarlington Optocoupler ] 13 页

NJSEMI

 		4N30 光子耦合型隔离器[ Photon Coupled Isolator ] 1 页

TOSHIBA

 		4N30(TP1) [ Optocoupler - Transistor Output, 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER, DIP-6 ] 5 页

TOSHIBA

 		4N30(TP4) [ Optocoupler - Transistor Output, 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER, DIP-6 ] 5 页

TOSHIBA

 		4N30(TP5) [ Optocoupler - Transistor Output, 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER, DIP-6 ] 5 页

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