HiPerFETTM
Power MOSFETs
IXFH 80N085
IXFT 80N085
VDSS = 85 V
ID25 = 80 A
RDS(on) = 9 mW
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
trr £ 200 ns
Preliminary data sheet
Symbol
TestConditions
MaximumRatings
TO-247 AD (IXFH)
VDSS
VDGR
VGS
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
85
85
V
V
V
V
A
A
A
±20
±30
80
VGSM
ID25
IL(RMS)
IDM
Transient
(TAB)
TC = 25°C
Leadcurrentlimit
75
TC = 25°C, pulse width limited by TJM
320
TO-268 (IXFT) Case Style
IAR
TC = 25°C
TC = 25°C
80
50
2.5
5
A
mJ
J
EAR
EAS
dv/dt
G
S
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
(TAB)
PD
TC = 25°C
300
-55 to +150
150
W
°C
°C
°C
G = Gate
S = Source TAB = Drain
D
= Drain
TJ
TJM
Tstg
-55 to +150
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10
Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
Features
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• Internationalstandardpackages
• Low RDS (on)
• Rated for unclamped Inductive load
switching (UIS)
• Molding epoxies meet UL94V-0
flammabilityclassification
min.
typ.
max.
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
85
V
V
VGS(th)
2.0
4.0
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
Advantages
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50
1
mA
mA
• Easy to mount
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
9
mW
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98709(03/24/00)
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